Panasonic UNR212Y, UNR212X, UNR2124, UNR2123, UNR2122 Datasheet

Transistors with built-in Resistor

UN2121/2122/2123/2124/212X/212Y

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

		Marking Symbol	(R1)	(R2)
●	UN2121	7A	2.2kΩ	2.2kΩ
●	UN2122	7B	4.7kΩ	4.7kΩ
●	UN2123	7C	10kΩ	10kΩ
●	UN2124	7D	2.2kΩ	10kΩ
●	UN212X	7I	0.27kΩ	5kΩ
●	UN212Y	7Y	3.1kΩ	4.6kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–500	mA
Total power dissipation	PT	200	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2

0.21.9±

1

1.45

+0.1

–0.05

0.950.95

3

0.4

2

+0.1

0.16 –0.06

+0.2

1.1 –0.1

0.8

0.1 to 0.3

0.1

0.4±0.2

0 to

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Internal Connection

C

R1

B

R2

E

1

Transistors with built-in Resistor

UN2121/2122/2123/2124/212X/212Y

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

I

V

= –50V, I = 0

–1

CBO

CB

E

µA

UN212X

I

V

= –50V, I = 0

– 0.1

CBO

CB

E

Collector cutoff current

I

V = –50V, I = 0

–1

CEO

CE

B

µA

UN212X

I

V = –50V, I = 0

– 0.5

CEO

CE

B

Emitter

UN2121

–5

cutoff

UN2122/212X/212Y

IEBO

VEB = –6V, IC = 0

–2

mA

current

UN2123/2124

–1

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Forward

UN2121

40

UN2122/212Y

50

current

h

V = –10V, I = –100mA

transfer

UN2123/2124

FE

CE

C

60

ratio

UN212X

20

Collector to emitter saturation voltage

V

I = –100mA, I = –5mA

– 0.25

CE(sat)

C

B

UN212X

V

I = –10mA, I = – 0.3mA

– 0.25

V

CE(sat)

C

B

UN212Y

V

I = –50mA, I = –5mA

– 0.15

CE(sat)

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 500Ω

–4.9

V

Output voltage low level

VOL

VCC = –5V, VB = –3.5V, RL = 500Ω

– 0.2

V

Transition frequency

f

V

CB

= –10V, I = 50mA, f = 200MHz

200

MHz

T

E

UN2121

2.2

Input

UN2122

4.7

kΩ

UN2123

R1

(–30%)

10

(+30%)

resis-

tance

UN212X

0.27

UN212Y

3.1

Resistance ratio

0.8

1.0

1.2

UN2124

R1/R2

0.22

UN212X

0.054

UN212Y

0.67

Common characteristics chart

				PT — Ta
	250
(mW)	200
T
P
dissipation	150
	100
power
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)
2