Panasonic UNR5216, UNR5215, UNR5214, UNR5213, UNR5212 Datasheet

Transistors with built-in Resistor

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/

521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●S-Mini type package, allowing automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

		Marking Symbol	(R1)	(R2)
●	UN5211	8A	10kΩ	10kΩ
●	UN5212	8B	22kΩ	22kΩ
●	UN5213	8C	47kΩ	47kΩ
●	UN5214	8D	10kΩ	47kΩ
●	UN5215	8E	10kΩ	—
●	UN5216	8F	4.7kΩ	—
●	UN5217	8H	22kΩ	—
●	UN5218	8I	0.51kΩ	5.1kΩ
●	UN5219	8K	1kΩ	10kΩ
●	UN5210	8L	47kΩ	—
●	UN521D	8M	47kΩ	10kΩ
●	UN521E	8N	47kΩ	22kΩ
●	UN521F	8O	4.7kΩ	10kΩ
●	UN521K	8P	10kΩ	4.7kΩ
●	UN521L	8Q	4.7kΩ	4.7kΩ
●	UN521M	EL	2.2kΩ	47kΩ
●	UN521N	EX	4.7kΩ	47kΩ
●	UN521T	EZ	22kΩ	47kΩ
●	UN521V	FD	2.2kΩ	2.2kΩ
●	UN521Z	FF	4.7kΩ	22kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	150	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

				2.1±0.1
			0.425	1.25±0.1	0.425
			1		+0.1 -0
0.2	0.1	0.65			0.3
±	±
2.0	1.3	0.65			3
			2

0.10.9±

0.2

0.150.05-

0.10.7±

+0.1

0.1

0.2±0.1

0 to

1

: Base

2

: Emitter

EIAJ : SC–70

3

: Collector

S–Mini Type Package

Internal Connection

C

R1

B

R2

E

1

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/

Transistors with built-in Resistor

521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN5211

0.5

UN5212/5214/521E/521D/521M/521N/521T

0.2

UN5213

0.1

Emitter

UN5215/5216/5217/5210

0.01

cutoff

IEBO

VEB = 6V, IC = 0

mA

UN521F/521K

1.0

current

UN5219

1.5

UN5218/521L/521V

2.0

UN521Z

0.4

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN5211

35

UN5212/521E

60

UN5213/5214/521M

80

Forward

UN5215*/5216*/5217*/5210*

160

460

current

UN521F/521D/5219

hFE

VCE = 10V, IC = 5mA

30

transfer

ratio

UN5218/521K/521L

20

UN521N/521T

80

400

UN521V

6

20

UN521Z

60

200

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

UN521V

IC = 10mA, IB = 1.5mA

0.25

V

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN5213/521K

VOL

VOC = 5V, VB = 3.5V, RL = 1kΩ

0.2

V

UN521D

VCC = 5V, VB = 10V, RL = 1kΩ

0.2

UN521E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

150

MHz

UN5211/5214/5215/521K

10

UN5212/5217/521T

22

Input

UN5213/521D/521E/5210

47

kΩ

UN5216/521F/521L/521N/521Z

R1

(–30%)

4.7

(+30%)

resis-

tance

UN5218

0.51

UN5219

1

UN521M/521V

2.2

* hFE rank classification (UN5125/5216/5217/5210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/

Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

■ Electrical Characteristics (continued)				(Ta=25˚C)
	Parameter	Symbol		Conditions	min	typ	max	Unit
	UN5211/5212/5213/521L				0.8	1.0	1.2
	UN5214				0.17	0.21	0.25
	UN5218/5219				0.08	0.1	0.12
	UN521D					4.7
Resis-	UN521E					2.14
	UN521F/521T	R1/R2				0.47
tance
ratio	UN521K					2.13
	UN521M					0.047
	UN521N					0.1
	UN521V					1.0
	UN521Z					0.21

3

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/

Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

Common characteristics chart

			PT — Ta
	240
(mW)	200
T
P	160
dissipation	120
power	80
Total	40
	0
	0	40	80	120	160
		Ambient temperature		Ta	(˚C)

Characteristics charts of UN5211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		(V)														VCE=10V
	140		IB=1.0mA
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
C	100						0.4mA		Collector to emitter saturationvoltageV	3						Forward current transferratio
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
(pF)
						IE=0									Ta=25˚C								Ta=25˚C
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
4

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/

Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

Characteristics charts of UN5212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		(V)															VCE=10V
	140
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
(pF)
						IE=0								Ta=25˚C									Ta=25˚C
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN5213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		(V)															VCE=10V
(mA)	140			IB=1.0mA		0.9mA			CE(sat)	30							FE	350
							0.8mA										h
	120						0.7mA		voltagesaturationemittertoCollectorV	10							transfercurrentForwardratio	300						Ta=75˚C
IcurrentCollector							0.6mA
							0.5mA																	25˚C
C	100									3								250
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)

5

UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z

										Cob — V						CB																		IO — V			IN
	6																											10000
(pF)																			f=1MHz																					VO=5V
																			IE=0									3000												Ta=25˚C
	5																		Ta=25˚C
ob																											A)
C																												1000
capacitanceoutputCollector	4																										(
																											IcurrentOutput
																											O	300
	3																											100
	2																											30
																												10
	1
																												3
	0																											1
							1					3			10				30			100									0.6		0.8				1.0			1.2				1.4
	0.1				0.3																							0.4
				Collector to base voltage															VCB				(V)								Input voltage							VIN		(V)
				Characteristics charts of UN5214
											IC — V				CE																		VCE(sat) — I C
	160																											100
																				Ta=25˚C							(V)														IC/IB=10

	140			IB=1.0mA		0.9mA		CE(sat)	30
(mA)
	120					0.7mA		V	10
						0.8mA		voltage
I	100					0.5mA			3
C						0.6mA
currentCollector	80					0.4mA		saturationemittertoCollector	1
	60					0.3mA			0.3
														Ta=75˚C
	40					0.2mA			0.1			25˚C
	20					0.1mA			0.03	–25˚C
	0								0.01		1	3	10	30	100
	0	2	4	6	8	10	12		0.1	0.3

Collector to emitter voltage VCE (V)

Collector current IC (mA)

								VIN — I					O
	100
																	VO=0.2V
	30																Ta=25˚C
(V)	10
IN	3
V
voltage	1
Input	0.3
	0.1
	0.03
	0.01
					1					3		10					30						100
	0.1		0.3

Output current IO (mA)

								hFE — I					C
	400
																	VCE=10V
FE	350
h
ratio	300
transfer	200
	250																	Ta=75˚C
current
																		25˚C
	150
Forward																		–	25˚C
	100
	50
	0
					10					30		100					300				1000
	1		3

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

0.1	0.3	1	3	10	30	100
Collector to base voltage					VCB	(V)

					IO — V			IN															VIN — I					O
	10000															100
										VO=5V																						VO=0.2V
A)(	3000									Ta=25˚C						30																Ta=25˚C
	1000														(V)	10
															IN
O	300															3
I															V
currentOutput	10														voltageInput	0.1
	100															1
	30															0.3
	3															0.03
	1															0.01
	0.4		0.6		0.8			1.0		1.2			1.4			0.1		0.3		1					3			10				30						100
			Input voltage						VIN	(V)								Output current												IO		(mA)

6