Panasonic UNR4121, UNR4122, UNR4123, UNR4124, UNR412X Technical data

Transistors with built-in Resistor

UNR4121/4122/4123/4124/412X/412Y

(UN4121/4122/4123/4124/412X/412Y)

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●New S type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UNR4121	2.2kΩ	2.2kΩ
●	UNR4122	4.7kΩ	4.7kΩ
●	UNR4123	10kΩ	10kΩ
●	UNR4124	2.2kΩ	10kΩ
●	UNR412X	0.27kΩ	5.0kΩ
●	UNR412Y	3.1kΩ	4.6kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–500	mA
Total power dissipation	PT	300	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

4.0±0.2
		3.0±0.2
		15.6±0.5
1 2 3	+0.2 0.45–0.1	0.7±0.1	0.22.0±
marking

1.27 1.27

2.54±0.15

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Internal Connection

C

R1

B

R2

E

Note.) The Part numbers in the Parenthesis show conventional part number.

1

Transistors with built-in Resistor					UNR4121/4122/4123/4124/412X/412Y
■ Electrical Characteristics			(Ta=25˚C)
	Parameter		Symbol		Conditions		min	typ	max	Unit
Collector cutoff current			ICBO		VCB = –50V, IE = 0				–1	µA
		UNR412X	ICBO		VCB = –50V, IE = 0				– 0.1
Collector cutoff current			ICEO		VCE = –50V, IB = 0				–1	µA
		UNR412X	ICEO		VCE = –50V, IB = 0				– 0.5
Emitter	UNR4121								–5
cutoff	UNR4122/412X/412Y		IEBO		VEB = –6V, IC = 0				–2	mA
current
	UNR4123/4124								–1
Collector to base voltage			VCBO		IC = –10µA, IE = 0		–50			V
Collector to emitter voltage			VCEO		IC = –2mA, IB = 0		–50			V
Forward	UNR4121						40
	UNR4122/412Y						50
current			hFE		VCE = –10V, IC = –100mA
transfer	UNR4123/4124						60
ratio
	UNR412X						20
Collector to emitter saturation voltage			VCE(sat)		IC = –100mA, IB = –5mA				– 0.25
		UNR412X	VCE(sat)		IC = –10mA, IB = – 0.3mA				– 0.25	V
		UNR412Y	VCE(sat)		IC = –50mA, IB = –5mA				– 0.15
Output voltage high level			VOH		VCC = –5V, VB = – 0.5V, RL = 500Ω		–4.9			V
Output voltage low level			VOL		VCC = –5V, VB = –3.5V, RL = 500Ω				– 0.2	V
Transition frequency			fT		VCB = –10V, IE = 50mA, f = 200MHz			80		MHz
	UNR4121/4124							2.2
Input	UNR4122							4.7
										kΩ
	UNR4123		R1				(–30%)	10	(+30%)
resis-
tance	UNR412X							0.27
	UNR412Y							3.1
Resistance ratio							0.8	1.0	1.2
	UNR4124		R1/R2				0.17	0.22	0.27
	UNR412X						0.043	0.054	0.065
	UNR412Y							0.67

Common characteristics chart

				PT — Ta
	400
(mW)	300
T
P
power dissipation	200
	100
Total
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)
2

Transistors with built-in Resistor

UNR4121/4122/4123/4124/412X/412Y

Characteristics charts of UNR4121

IC — VCE

–240

Ta=25˚C

(mA)

–200

–160

IB= –1.0mA

C

–0.9mA

I

current

–0.8mA

–120

–0.7mA

–

0.6mA

Collector

–0.5mA

–80

–0.4mA

–

0.3mA

–40

–

0.2mA

–

0.1mA

0

0

–2

–4

–6

–8 –10 –12

Collector to emitter voltage

VCE

(V)

Cob — VCB

12

(pF)

f=1MHz

Ta=25˚C

ob

10

IE=0

C

capacitance

8

output

6

4

Collector

2

0

–1

–3

–10

–30

–100

–0.1

–0.3

Collector to base voltage

VCB

(V)

VCE(sat) — IC

hFE — IC

–100

IC/IB=10

400

(V)

VCE= –10V

CE(sat)

–30

FE

h

Collector to emitter saturation voltage V

–10

Forward current transfer ratio

300

–3

Ta=75˚C

–1

Ta=75˚C

200

–0.3

25˚C

–0.1

100

25˚C

–0.03

–25˚C

–25˚C

–0.01

0

–1

–3

–10

–30

–100

–300 –1000

–1

–3

–10

–30

–100 –300 –1000

Collector current

IC

(mA)

Collector current

IC

(mA)

IO — VIN

VIN — IO

–10000

VO= –5V

–100

VO= –0.2V

Ta=25˚C

Ta=25˚C

–3000

–30

( A)	–1000					(V)	–10
O –300						IN	–3
I						V
Outputcurrent	–10					voltageInput	–0.1
	–100						–1
	–30						–0.3
	–3						–0.03
							–0.01
	–1
	–0.4 –0.6 –0.8		–1.0	–1.2 –1.4			–0.1 –0.3 –1 –3		–10	–30 –100
		Input voltage	VIN	(V)				Output current	IO	(mA)

	Characteristics charts of UNR4122
	IC — VCE				VCE(sat) — IC
	–300	Ta=25˚C		–100	IC/IB=10
			(V)
	–250		CE(sat)	–30
(mA)
		IB= –1.0mA	V	–10
I			voltage
	–200	–0.8mA
C				–3
currentCollector			saturationemittertoCollector
	–150	–0.7mA		–1
					Ta=75˚C
		–0.6mA
		–0.5mA		–0.3
	–100	–0.4mA			25˚C
		–0.3mA		–0.1
	–50	–0.2mA			–25˚C
		–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10

–12

–1

–3

–10 –30

–100 –300 –1000

Collector to emitter voltage

VCE

(V)

Collector current

IC (mA)

Forward current transfer ratio hFE

hFE — IC

160 Ta=75˚C

VCE= –10V

120

25˚C

80

–25˚C

40

0

–1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

3