Panasonic UNR4111, UNR4112, UNR4113, UNR4114, UNR4115 Technical data

Transistors with built-in Resistor

UNR4111/4112/4113/4114/4115/4116/4117/

4118/4119/4110/411D/411E/411F/411H/411L

(UN4111/4112/4113/4114/4115/4116/4117/4118/

4119/4110/411D/411E/411F/411H/411L)

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●New S type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R	1 )	(R	2)
●	UNR4111	10k	Ω	10k Ω
●	UNR4112	22k	Ω	22k	Ω
●	UNR4113	47k	Ω	47k	Ω
●	UNR4114	10k	Ω	47k	Ω
●	UNR4115	10k	Ω	—
●	UNR4116	4.7k	Ω	—
●	UNR4117	22k	Ω	—
●	UNR4118	0.51k	Ω	5.1k	Ω
●	UNR4119	1k	Ω	10k Ω
●	UNR4110	47k	Ω	—
●	UNR411D	47k	Ω	10k Ω
●	UNR411E	47k	Ω	22k	Ω
●	UNR411F	4.7k	Ω	10k Ω
●	UNR411H	2.2k	Ω	10k Ω
●	UNR411L	4.7k	Ω	4.7k	Ω

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter				Symbol	Ratings	Unit
Collector to base voltage	V			CBO	–50	V
Collector to emitter voltage				V CEO	–50	V
Collector current			I	C	–100	mA
Total power dissipation		P		T	300	mW
Junction temperature		T		j	150	˚C
Storage temperature		T		stg	–55 to +150	˚C

4.0±	0.2			Unit: mm
			3.0± 0.2
			15.6± 0.5
1 2	3	+0.2 0.45–0.1	0.7±0.1	±0.22.0
marking

1.27 1.27

2.54± 0.15

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Internal Connection

C

R1

B

R2

E

Note	) The part number	s in the parenthesis show conventional part numbe	r.

1

UNR4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor

4119/4110/411D/411E/411F/411H/411L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

V CB

= –50V, I E

= 0

– 0.1

µ

A

ICEO

V CE

= –50V, I B

= 0

– 0.5

µ

A

UNR4111

– 0.5

UNR4112/4114/411E/411D

– 0.2

Emitter

UNR4113

– 0.1

UNR4115/4116/4117/4110 I

V EB

= –6V, I C

= 0

– 0.01

mA

cutoff

EBO

current

UNR411F/411H

–1.0

UNR4119

–1.5

UNR4118/411L

–2.0

Collector to base voltage

V

CBO

IC

= –10 µ A, IE

= 0

–50

V

Collector to emitter voltage

V

CEO

I

= –2mA, I

B

= 0

–50

V

C

UNR4111

35

Forward

UNR4112/411E

60

UNR4113/4114

80

current

h FE

V CE

= –10V, I C

= –5mA

transfer

UNR4115*/4116*/4117*/4110*

160

460

ratio

UNR411F/411D/4119/411H

30

UNR4118/411L

20

Collector to emitter saturation voltage

V

CE(sat)

I

= –10mA, I

B

= – 0.3mA

– 0.25

V

C

Output voltage high level

V

OH

V CC

= –5V, V

B

= – 0.5V, R

L

= 1k

Ω

–4.9

V

Output voltage low level

V

CC

= –5V, V

B

= –2.5V, R

L

= 1k

Ω

– 0.2

UNR4113

V OL

V CC

= –5V, V

B

= –3.5V, R

L

= 1k

Ω

– 0.2

V

UNR411D

= –5V, V

= –10V, R

L = 1k

Ω

– 0.2

V

CC

B

UNR411E

V

CC

= 5V, V

B

= –6V, R L = 1k

Ω

– 0.2

Transition frequency

f

T

V CB

= –10V, I E

= 1mA, f = 200MHz

80

MHz

UNR4111/4114/4115

10

UNR4112/4117

22

UNR4113/4110/411D/411E

47

Input

kΩ

UNR4116/411F/411L

R

1

(–30%)

4.7

(+30%)

resis-

UNR4118

0.51

tance

UNR4119

1

UNR411H

2.2

UNR4111/4112/4113/411L

0.8

1.0

1.2

UNR4114

0.17

0.21

0.25

UNR4118/4119

0.08

0.1

0.12

Resis-

UNR411D

R

1 /R2

3.7

4.7

5.7

tance

UNR411E

1.7

2.14

2.6

ratio

UNR411F

0.37

0.47

0.57

UNR411H

0.17

0.22

0.27

* hFE rank classification (UNR4115/4116/4117/4110)

Rank

Q

R

S

h FE

160 to 260

210 to 340

290 to 460

2

UNR4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L

Common characteristics chart

				PT — Ta
	400
(mW)	300
T
P
power dissipation	200
	100
Total
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Collector current IC (mA)

Collector output capacitance Cob (pF)

Characteristics charts of UNR4111

IC — V

CE

VCE(sat) — I

C

hFE — I

C

–160

–100

IC/IB=10

160

Ta=25˚C

(V)

VCE=–10V

Ta=75˚C

IB=–1.0mA

–140

FE

–30

CE(sat)

–120

–0.9mA

–10

h

120

25˚C

–0.8mA

voltagesaturationemittertoCollectorV

transfercurrentForwardratio

–100

–0.7mA

–3

–25˚C

–0.6mA

–80

–0.5mA

–1

80

–0.4mA

–60

–0.3mA

–0.3

25˚C

Ta=75˚C

–40

–0.2mA

–0.1

40

–20

–0.03

–25˚C

–0.1mA

0

–0.01

0

–10

–30

–100

–300

–1000

0

–2

–4

–6

–8

–10

–12

–0.1

–0.3 –1 –3 –10

–30

–100

–1

–3

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Collector current

IC

(mA)

Cob — V CB

IO — V IN

VIN — I O

6

f=1MHz

–10000

VO=–5V

–100

VO=–0.2V

IE=0

Ta=25˚C

Ta=25˚C

5

Ta=25˚C

–3000

–30

A)(

(V)

–1000

–10

4

IN

O –300

–3

I

V

3

Outputcurrent

–10

Inputvoltage

–0.1

–100

–1

2

–30

–0.3

1

–3

–0.03

0

–1

–0.01

–0.1

–0.3

–1

–3

–10

–30

–100

–0.4

–0.6 –0.8 –1.0

–1.2

–1.4

–0.1

–0.3 –1 –3

–10

–30

–100

Collector to base voltage

VCB

(V)

Input voltage

VIN

(V)

Output current

IO

(mA)

3

UNR4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L

	Characteristics charts of UNR4112
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	(V)
	IB=–1.0mA			–30
	–140	–0.9mA	CE(sat)
(mA)		–0.8mA	V
	–120	–0.6mA		–10
		–0.7mA	voltage
I
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1
	–60	–0.3mA		–0.3	25˚C	Ta=75˚C
	–40	–0.2mA		–0.1
	–20	–0.1mA		–0.03	–25˚C

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

(V)

–10

IN

O –300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UNR4113
	IC — V	CE			VCE(sat) — I	C
	–160				–100	IC/IB=10
	IB=–1.0mA		Ta=25˚C	(V)
	–140	–0.9mA		CE(sat)	–30
(mA)		–0.8mA		V
	–120		–0.7mA		–10
			–0.6mA
				voltage
I			–0.5mA
C					–3
currentCollector	–100			saturationemittertoCollector
	–80		–0.4mA		–1
	–60		–0.3mA		–0.3	Ta=75˚C
					25˚C
	–40		–0.2mA		–0.1
	–20				–25˚C
			–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

Ta=75˚C

300

25˚C

200

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

4

UNR4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

(V)

–10

O

IN

–300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UNR4114
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	(V)
	–140		CE(sat)	–30
	IB=–1.0mA	–0.9mA
(mA)			V
	–120	–0.8mA		–10
		–0.7mA
			voltage
I		–0.6mA
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1	–25˚C
	–60	–0.3mA		–0.3		Ta=75˚C
	–40	–0.2mA		–0.1	25˚C
	–20	–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–1000

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–300

Ta=25˚C

–1000

(V)

–100

IN

O –300

–30

I

V

currentOutput

–10

voltageInput

–1

–100

–10

–30

–3

–3

–0.3

–1

–0.1

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

5