Panasonic UNR911L, UNR911H, UNR911E, UNR911D, UNR911CJ Datasheet

Transistors with built-in Resistor

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/

911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

	Marking Symbol		(R1)	(R2)
●	UN9111	6A	10kΩ	10kΩ
●	UN9112	6B	22kΩ	22kΩ
●	UN9113	6C	47kΩ	47kΩ
●	UN9114	6D	10kΩ	47kΩ
●	UN9115	6E	10kΩ	—
●	UN9116	6F	4.7kΩ	—
●	UN9117	6H	22kΩ	—
●	UN9118	6I	0.51kΩ	5.1kΩ
●	UN9119	6K	1kΩ	10kΩ
●	UN9110	6L	47kΩ	—
●	UN911D	6M	47kΩ	10kΩ
●	UN911E	6N	47kΩ	22kΩ
●	UN911F	6O	4.7kΩ	10kΩ
●	UN911H	6P	2.2kΩ	10kΩ
●	UN911L	6Q	4.7kΩ	4.7kΩ
●	UNR911AJ	6X	100kΩ	100kΩ
●	UNR911BJ	6Y	100kΩ	—
●	UNR911CJ	6Z	—	47k Ω

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–100	mA
Total power dissipation	PT	125	mW
Junction temperature	Tj	125	˚C
Storage temperature	Tstg	–55 to +125	˚C

Unit: mm

											1.6±0.15
								0.4			0.8±0.1					0.4
																			+0.1		-0.05
±0.1		0.1±			0.5
								1											0.2
1.6		1.0			0.5											3
								2
		±0.150.75														0.150.05-
				0.30.10.45±
																+0.1
											0 to 0.1			0.2±0.1

1 : Base

2 : Emitter

3 : Collector

SS–Mini Type Pakage

Unit: mm

1.60±0.05

0.80

0.80±0.05

0.425

0.425

–0.031.60

0.800.80

0.051.00±

0.500.50

±0.020.27

+0.05

+0.05

0.85–0.03

+0.03

0.12–0.01

0.70–0.03

+0.05

0 to 0.1

1 : Base

2 : Emitter

3 : Collector

SS–Mini Flat Type Pakage (J type)

Internal Connection

C

R1

B

R2

E

1

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = –50V,EI = 0

– 0.1

µA

ICEO

VCE = –50V,BI = 0

– 0.5

µA

UN9111

– 0.5

UN9112/9114/911E/911D

– 0.2

Emitter

UN9113/UNR911AJ

– 0.1

UN9115/9116/9117/9110/UNR911BJ

I

V = –6V, I = 0

– 0.01

mA

cutoff

EBO

EB

C

current

UN911F/911H

–1.0

UN9119

–1.5

UN9118/911L/911CJ

–2.0

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Collector to emitter voltage

V

I = –2mA, I = 0

–50

V

CEO

C

B

UN9111

35

Forward

UN9112/911E

60

UN9113/9114/UNR911AJ/911CJ

80

current

h

V = –10V, I = –5mA

transfer

UN9115*/9116*/9117*/9110*UNR911BJ

FE

CE

C

160

460

ratio

UN911F/911D/9119/911H

30

UN9118/911L

20

Collector to emitter saturation voltage

V

I = –10mA, I = – 0.3mA

– 0.25

V

CE(sat)

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 1kΩ

–4.9

V

Output voltage low level

VCC = –5V, VB = –2.5V, RL = 1kΩ

– 0.2

UN9113/UNR911BJ

VCC = –5V, VB = –3.5V, RL = 1kΩ

– 0.2

UN911D

VOL

VCC = –5V, VB = –10V, RL = 1kΩ

– 0.2

V

UN911E

VCC = –5V, VB = –6V, RL = 1kΩ

– 0.2

UNR911AJ

VCC = –5V, VB = –5.0V, RL = 1kΩ

– 0.2

Transition frequency

f

V = –10V, I = 2mA, f = 200MHz

150

MHz

UNR911AJ

T

CB

E

80

UN9111/9114/9115

10

UN9112/9117

22

UN9113/9110/911D/911E

47

Input

UN9116/911F/911L

R1

(–30%)

4.7

(+30%)

kΩ

resis-

UN9118

0.51

tance

UN9119

1

UN911H

2.2

UNR911AJ/911BJ

100

* hFE rank classification (UN9115/9116/9117/9110)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

■ Electrical Characteristics (continued)					(Ta=25˚C)
	Parameter		Symbol		Conditions	min	typ	max	Unit
	UN9111/9112/9113/911L					0.8	1.0	1.2
	UN9114					0.17	0.21	0.25
	UN9118/9119					0.08	0.1	0.12
Resis-	UN911D		R1/R2				4.7
tance	UN911E						2.14
ratio
	UN911F						0.47
	UN911H					0.17	0.22	0.27
	UNR911AJ						1.0
Resistance between Emitter to Base		UNR911CJ	R2			–30%	47	30%

3

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

Common characteristics chart

				PT — Ta
	150
)
(mW	125
T
P	100
dissipation	75
power	50
Total	25
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN9111

IC — V

CE

–160

Ta=25˚C

–140

IB=–1.0mA

)

–0.9mA

(mA

–120

–

0.8mA

C

–100

–0.7mA

I

current

–0.6mA

–0.4mA

Collector

–80

–0.5mA

–60

–

0.2mA

–

0.3mA

–40

–20

–

0.1mA

0

0

–2

–4

–6

–8

–10

–12

Collector to emitter voltage

VCE (V)

Cob — V

CB

6

)

f=1MHz

(pF

IE=0

5

Ta=25˚C

ob

C

capacitance

4

output

3

2

Collector

1

0

–1

–3

–10

–30

–100

–0.1

–0.3

Collector to base voltage

VCB

(V)

	VCE(sat) — I	C		hFE — I	C
	–100		IC/IB=10	160
)				VCE=–10V	Ta=75˚C
V
(			FE
CE(sat)	–30
			h		25˚C
voltagesaturationemittertoCollectorV	–10		transfercurrentForwardratio	120
	–3				–25˚C
	–1			80
	–0.3		Ta=75˚C
	25˚C
	–0.1			40
	–25˚C
	–0.03

–0.01

0

–10

–30

–100

–300

–1000

–0.1

–0.3 –1 –3

–10

–30

–100

–1

–3

Collector current

IC

(mA)

Collector current

IC

(mA)

IO — V

IN

VIN — I

O

–10000

VO=–5V

–100

VO=–0.2V

Ta=25˚C

Ta=25˚C

–3000

–30

)

–1000

–10

( A

(V)

O

–300

IN

–3

I

V

Output current

–100

Input voltage

–1

–30

–0.3

–10

–0.1

–3

–0.03

–1

–0.01

–0.4 –0.6

–0.8

–1.0

–1.2

–1.4

–0.1

–0.3 –1 –3

–10

–30

–100

Input voltage

VIN

(V)

Output current

IO

(mA)

4

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

	Characteristics charts of UN9112
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	V)
	IB=–1.0mA		(
)	–140	–0.9mA	CE(sat)	–30
mA(		–0.8mA	V
	–120	–0.6mA		–10
		–0.7mA	voltage
I
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1
	–60	–0.3mA		–0.3	25˚C	Ta=75˚C
	–40	–0.2mA		–0.1
	–20	–0.1mA		–0.03	–25˚C

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A()

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

V)(

–10

IN

O –300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UN9113
	IC — V	CE			VCE(sat) — I	C
	–160				–100	IC/IB=10
	IB=–1.0mA		Ta=25˚C	V)
	–140			(
)		–0.9mA		CE(sat)	–30
mA		–0.8mA
	–120		–0.7mA	V	–10
			–0.6mA
I				voltage
(			–0.5mA
C					–3
currentCollector	–100			saturationemittertoCollector
	–80		–0.4mA		–1
	–60		–0.3mA		–0.3	Ta=75˚C
					25˚C
	–40		–0.2mA		–0.1
	–20				–25˚C
			–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

Ta=75˚C

300

25˚C

200

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

5