Panasonic UNR4224, UNR4223, UNR4222, UNR4221 Datasheet

Transistors with built-in Resistor

UN4221/4222/4223/4224

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●New S type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN4221	2.2kΩ	2.2kΩ
●	UN4222	4.7kΩ	4.7kΩ
●	UN4223	10kΩ	10kΩ
●	UN4224	2.2kΩ	10kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol		Ratings	Unit
Collector to base voltage	VCBO		50	V
Collector to emitter voltage	VCEO		50	V
Collector current	IC		500	mA
Total power dissipation	PT		300	mW
Junction temperature	Tj		150	˚C
Storage temperature	Tstg		–55 to +150	˚C
■ Electrical Characteristics		(Ta=25˚C)

Unit: mm

4.0±0.2
		3.0±0.2
		15.6±0.5
1 2 3	+0.2 0.45–0.1	0.7±0.1	0.22.0±
marking

1.27 1.27

2.54±0.15

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Internal Connection

C

R1

B

R2

E

	Parameter		Symbol	Conditions	min	typ	max	Unit
Collector cutoff current			ICBO	VCB = 50V, IE = 0			1	µA
			ICEO	VCE = 50V, IB = 0			1	µA
Emitter	UN4221						5
cutoff	UN4222		IEBO	VEB = 6V, IC = 0			2	mA
current
	UN4223/4224						1
Collector to base voltage			VCBO	IC = 10µA, IE = 0	50			V
Collector to emitter voltage			VCEO	IC = 2mA, IB = 0	50			V
Forward	UN4221				40
current
	UN4222		hFE	VCE = 10V, IC = 100mA	50
transfer
	UN4223/4224				60
ratio
Collector to emitter saturation voltage			VCE(sat)	IC = 100mA, IB = 5mA			0.25	V
Output voltage high level			VOH	VCC = 5V, VB = 0.5V, RL = 500Ω	4.9			V
Output voltage low level			VOL	VCC = 5V, VB = 3.5V, RL = 500Ω			0.2	V
Input	UN4221/4224					2.2
								kΩ
	UN4222		R1		(–30%)	4.7	(+30%)
resis-
tance	UN4223					10
Resistance ratio			R1/R2		0.8	1.0	1.2
		UN4224			0.17	0.22	0.27

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Transistors with built-in Resistor

UN4221/4222/4223/4224

Common characteristics chart

				PT — Ta
	400
(mW)	350
	300
T
P
dissipation	250
	200
	150
power
	100
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN4221

	IC — V	CE
	300	Ta=25˚C
	IB=1.0mA
	250
	(mA)	0.9mA
		0.8mA
	200
	C	0.7mA
	I

current	150					0.6mA
Collector						0.5mA
	100					0.3mA
						0.4mA
	50
						0.2mA
	0					0.1mA
	0	2	4	6	8	10	12

Collector to emitter voltage VCE (V)

								Cob — V						CB
	24
(pF)																	f=1MHz
																	Ta=25˚C
ob	20																IE=0
C
capacitance	16
output	12
	8
Collector
	4
	0
					1					3			10				30			100
	0.1		0.3
		Collector to base voltage															VCB				(V)

			VCE(sat) — I			C						hFE — I		C
	100						IC/IB=10			400
(V)															VCE=10V
									FE
CE(sat)	30
									h
Collector to emitter saturation voltage V	10								Forward current transfer ratio	300					Ta=75˚C
	3
	1									200
							Ta=75˚C
	0.3												25˚C
				25˚C
	0.1									100
	0.03	–25˚C										–25˚C
	0.01									0		10	30	100	300	1000
	1	3	10	30		100	300	1000		1	3
		Collector current				IC	(mA)				Collector current			IC	(mA)
			IO — V		IN							VIN — I		O
	10000						VO=5V			100					VO=0.2V
							Ta=25˚C								Ta=25˚C
	3000									30

( A)	1000								(V)	10
O	300								IN	3
I									V
currentOutput	10								voltageInput	0.1
	100									1
	30									0.3
	3									0.03
	1									0.01
	0.4		0.6	0.8	1.0	1.2	1.4			0.1		0.3	1	3	10	30	100
			Input voltage		VIN	(V)						Output current			IO	(mA)

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