Panasonic UNR411H, UNR411E, UNR411F, UNR411D, UNR4119 Datasheet

Transistors with built-in Resistor

UN4111/4112/4113/4114/4115/4116/4117/4118/

4119/4110/411D/411E/411F/411H/411L

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●New S type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN4111	10kΩ	10kΩ
●	UN4112	22kΩ	22kΩ
●	UN4113	47kΩ	47kΩ
●	UN4114	10kΩ	47kΩ
●	UN4115	10kΩ	—
●	UN4116	4.7kΩ	—
●	UN4117	22kΩ	—
●	UN4118	0.51kΩ	5.1kΩ
●	UN4119	1kΩ	10kΩ
●	UN4110	47kΩ	—
●	UN411D	47kΩ	10kΩ
●	UN411E	47kΩ	22kΩ
●	UN411F	4.7kΩ	10kΩ
●	UN411H	2.2kΩ	10kΩ
●	UN411L	4.7kΩ	4.7kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–100	mA
Total power dissipation	PT	300	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

4.0±0.2
		3.0±0.2
		15.6±0.5
1 2 3	+0.2 0.45–0.1	0.7±0.1	0.22.0±
marking

1.27 1.27

2.54±0.15

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Internal Connection

C

R1

B

R2

E

1

UN4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor

4119/4110/411D/411E/411F/411H/411L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = –50V,EI = 0

– 0.1

µA

ICEO

VCE = –50V,BI = 0

– 0.5

µA

UN4111

– 0.5

UN4112/4114/411E/411D

– 0.2

Emitter

UN4113

– 0.1

UN4115/4116/4117/4110

I

V = –6V, I = 0

– 0.01

mA

cutoff

EBO

EB

C

current

UN411F/411H

–1.0

UN4119

–1.5

UN4118/411L

–2.0

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Collector to emitter voltage

V

I = –2mA, I = 0

–50

V

CEO

C

B

UN4111

35

Forward

UN4112/411E

60

UN4113/4114

80

current

h

V = –10V, I = –5mA

transfer

UN4115*/4116*/4117*/4110*

FE

CE

C

160

460

ratio

UN411F/411D/4119/411H

30

UN4118/411L

20

Collector to emitter saturation voltage

V

I = –10mA, I = – 0.3mA

– 0.25

V

CE(sat)

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 1kΩ

–4.9

V

Output voltage low level

VCC = –5V, VB = –2.5V, RL = 1kΩ

– 0.2

UN4113

VOL

VCC = –5V, VB = –3.5V, RL = 1kΩ

– 0.2

V

UN411D

VCC = –5V, VB = –10V, RL = 1kΩ

– 0.2

UN411E

VCC = 5V, VB = –6V, RL = 1kΩ

– 0.2

Transition frequency

f

V = –10V, I = 1mA, f = 200MHz

80

MHz

T

CB

E

UN4111/4114/4115

10

UN4112/4117

22

UN4113/4110/411D/411E

47

Input

kΩ

UN4116/411F/411L

R1

(–30%)

4.7

(+30%)

resis-

UN4118

0.51

tance

UN4119

1

UN411H

2.2

UN4111/4112/4113/411L

0.8

1.0

1.2

UN4114

0.17

0.21

0.25

UN4118/4119

0.08

0.1

0.12

Resis-

UN411D

R1/R2

3.7

4.7

5.7

tance

ratio

UN411E

1.7

2.14

2.6

UN411F

0.37

0.47

0.57

UN411H

0.17

0.22

0.27

* hFE rank classification (UN4115/4116/4117/4110)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L

Common characteristics chart

				PT — Ta
	400
(mW)	300
T
P
power dissipation	200
	100
Total
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Collector current IC (mA)

Collector output capacitance Cob (pF)

Characteristics charts of UN4111

IC — V

CE

VCE(sat) — I

C

hFE — I

C

–160

–100

IC/IB=10

160

Ta=25˚C

(V)

VCE=–10V

Ta=75˚C

IB=–1.0mA

–140

FE

–30

CE(sat)

–120

–0.9mA

–10

h

120

25˚C

–0.8mA

voltagesaturationemittertoCollectorV

transfercurrentForwardratio

–100

–0.7mA

–3

–25˚C

–0.6mA

–80

–0.5mA

–1

80

–0.4mA

–60

–0.3mA

–0.3

25˚C

Ta=75˚C

–40

–0.2mA

–0.1

40

–20

–0.03

–25˚C

–0.1mA

0

–0.01

0

–10

–30

–100

–300

–1000

0

–2

–4

–6

–8

–10

–12

–0.1

–0.3 –1 –3 –10

–30

–100

–1

–3

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Collector current

IC

(mA)

Cob — V CB

IO — V IN

VIN — I O

6

f=1MHz

–10000

VO=–5V

–100

VO=–0.2V

IE=0

Ta=25˚C

Ta=25˚C

5

Ta=25˚C

–3000

–30

A)(

(V)

–1000

–10

4

IN

O

–300

–3

I

V

3

Outputcurrent

–10

Inputvoltage

–0.1

–100

–1

2

–30

–0.3

1

–3

–0.03

0

–1

–0.01

–0.1

–0.3

–1

–3

–10

–30

–100

–0.4

–0.6 –0.8 –1.0

–1.2

–1.4

–0.1

–0.3 –1 –3

–10

–30

–100

Collector to base voltage

VCB

(V)

Input voltage

VIN

(V)

Output current

IO

(mA)

3

UN4111/4112/4113/4114/4115/4116/4117/4118/

Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L

	Characteristics charts of UN4112
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	(V)
	IB=–1.0mA			–30
	–140	–0.9mA	CE(sat)
(mA)		–0.8mA	V
	–120	–0.6mA		–10
		–0.7mA	voltage
I
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1
	–60	–0.3mA		–0.3	25˚C	Ta=75˚C
	–40	–0.2mA		–0.1
	–20	–0.1mA		–0.03	–25˚C

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

(V)

–10

IN

O –300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UN4113
	IC — V	CE			VCE(sat) — I	C
	–160				–100	IC/IB=10
	IB=–1.0mA		Ta=25˚C	(V)
	–140	–0.9mA		CE(sat)	–30
(mA)		–0.8mA		V
	–120		–0.7mA		–10
			–0.6mA
				voltage
I			–0.5mA
C					–3
currentCollector	–100			saturationemittertoCollector
	–80		–0.4mA		–1
	–60		–0.3mA		–0.3	Ta=75˚C
					25˚C
	–40		–0.2mA		–0.1
	–20				–25˚C
			–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

Ta=75˚C

300

25˚C

200

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

4