OKI MSM5117805D-60TS-L, MSM5117805D-70JS, MSM5117805D-70TS-K, MSM5117805D-70TS-L, MSM5117805D-60JS Datasheet

PRODUCT FAMILY

Semiconductor

This version:Apr.1999

MSM5117805D

2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM5117805D is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117805D is available in a 28-pin plastic SOJ, 28-pin plastic TSOP.

FEATURES

·2,097,152-word ´ 8-bit configuration

·Single 5V power supply, ±10% tolerance

·	Input	: TTL compatible, low input capacitance
·	Output	: TTL compatible, 3-state
·	Refresh	: 2048 cycles/32 ms

· Fast page mode, read modify write capability

· CAS before RAS refresh, hidden refresh, RAS-only refresh capability

· Multi-bit test mode capability
· Package options:
28-pin 400mil plastic SOJ	(SOJ28-P-400-1.27)	(Product : MSM5117805D-xxJS)
28-pin 400mil plastic TSOP	(TSOPII28-P-400-1.27-K)	(Product : MSM5117805D-xxTS-K)
	(TSOPII28-P-400-1.27-L)	(Product : MSM5117805D-xxTS-L)
		xx : indicates speed rank.

Family		Access Time (Max.)					Cycle Time	Power Dissipation
							(Min.)
	tRAC		tAA	tCAC		tOEA		Operating (Max.)	Standby (Max.)
MSM5117805D-50	50ns		25ns	13ns		13ns	84ns	550mW
MSM5117805D-60	60ns		30ns	15ns		15ns	104ns	495mW	5.5mW
MSM5117805D-70	70ns		35ns	20ns		20ns	124ns	440mW

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MSM5117805D

PIN CONFIGRATION (TOP VIEW)

VCC 1	28	VSS	VCC 1
DQ1 2	27	DQ8	DQ1 2
DQ2 3	26	DQ7	DQ2 3
DQ3 4	25	DQ6	DQ3 4
DQ4 5	24	DQ5	DQ4 5
WE 6	23 CAS		WE 6
RAS 7	22	OE	RAS 7
NC 8	21	A9	NC 8
A10R 9	20	A8	A10R 9
A0 10	19	A7	A0 10
A1 11	18	A6	A1 11
A2 12	17	A5	A2 12
A3 13	16	A4	A3 13
VCC 14	15	VSS	VCC 14

	28	VSS	VSS 28			1	VCC
		DQ8	DQ8 27				DQ1
	27					2
		DQ7	DQ7 26				DQ2
	26					3
		DQ6	DQ6				DQ3
	25			25		4
		DQ5	DQ5				DQ4
	24			24		5
			CAS 23				WE
	23	CAS				6
		OE	OE 22				RAS
	22					7
		A9	A9 21				NC
	21					8
		A8	A8 20				A10R
	20					9
		A7	A7 19				A0
	19					10
		A6	A6 18				A1
	18					11
		A5	A5 17				A2
	17					12
		A4	A4 16				A3
	16					13
		VSS	VSS 15				VCC
	15					14

28-Pin Plastic SOJ	28-Pin Plastic TSOP	28-Pin Plastic TSOP
	(K Type)	(L Type)

Pin Name							Function
A0 – A9, A10R							Address Input
							Row Address Strobe
	RAS
							Column Address Strobe
	CAS
DQ1 – DQ8							Data Input/Data Output
							Output Enable
		OE
							Write Enable
	WE
	VCC						Power Supply (5V)
	VSS						Ground (0V)
		NC					No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same

GND voltage level must be provided to every VSS pin.

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MSM5117805D

BLOCK DIAGRAM

RAS	Timing	WE	OE
	Generator
			I/O
CAS			Controller
							Output
						8		8
							Buffers
								DQ1 – DQ8
10	Column
	Address	10	Column Decoders			8	Input	8
	Buffers						Buffers
	Internal	Refresh	Sense Amplifiers	8	I/O	8
A0 – A9					Selector
	Address	Control Clock
	Counter

	10
		Row		Row
		Address	11
				Deco-			Word			Memory
A10R	1	Buffers		ders			Drivers			Cells

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

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MSM5117805D

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	-0.5 to VCC + 0.5	V
Voltage VCC supply Relative to VSS	VCC	0.5 to 7.0	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	1	W
Operating Temperature	Topr	0 to 70	°C
Storage Temperature	Tstg	-55 to 150	°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit
	Power Supply Voltage	VCC	4.5	5.0	5.5	V
		VSS	0	0	0	V
	Input High Voltage	VIH	2.4	¾	VCC + 0.5*1	V
	Input Low Voltage	VIL	-0.5*2	¾	0.8	V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS - 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

Capacitance

(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)

Parameter

Symbol

Typ.

Max.

Unit

Input Capacitance (A0 – A9, A10R)

CIN1

¾

5

pF

Input Capacitance

CIN2

¾

7

pF

(RAS, CAS, WE, OE)

Output Capacitance (DQ1 – DQ8)

CI/O

¾

7

pF

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MSM5117805D

DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to 70°C)

MSM5117805

MSM5117805

MSM5117805

Parameter

Symbol

Condition

D-50

D-60

D-70

Unit

Note

Min.

Max

Min.

Max

Min.

Max

Output High Voltage

VOH

IOH = -5.0mA

2.4

VCC

2.4

VCC

2.4

VCC

V

Output Low Voltage

VOL

IOL = 4.2mA

0

0.4

0

0.4

0

0.4

V

Input Leakage

0V £ VI £ 6.5V ;

ILI

All other pins not

-10

10

-10

10

-10

10

mA

Current

under test = 0V

Output Leakage

ILO

DQ disable

-10

10

-10

10

-10

10

mA

Current

0V £ VO £ VCC

Average Power

RAS, CAS cycling,

Supply Current

ICC1

¾

100

¾

90

¾

80

mA

1,2

tRC = Min.

(Operating)

= VIH

¾

2

¾

2

¾

2

Power Supply

RAS,

CAS

Current

ICC2

mA

1

RAS,

CAS

³

¾

1

¾

1

¾

1

(Standby)

VCC – 0.2V

cycling,

Average Power

RAS

Supply Current

ICC3

CAS

= VIH,

¾

100

¾

90

¾

80

mA

1,2

(RAS

-only Refresh)

tRC = Min.

= VIH,

Power Supply

RAS

Current

ICC5

= VIL,

¾

5

¾

5

¾

5

mA

1

CAS

(Standby)

DQ = enable

Average Power

= cycling,

Supply Current

ICC6

RAS

¾

100

¾

90

¾

80

mA

1,2

(CAS before RAS

CAS before RAS

Refresh)

= VIL,

Average Power

RAS

Supply Current

ICC7

cycling,

¾

100

¾

90

¾

80

mA

1,3

CAS

(Fast Page Mode)

tPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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