Motorola MC10H145FN, MC10H145L, MC10H145P Datasheet

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Motorola MC10H145FN, MC10H145L, MC10H145P Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

16

x

4

Bit

Register

File

(RAM)

 

 

 

 

The MC10H145 is a 16 x 4 bit register file. The active-low chip select allows

MC10H145

easy expansion.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

The operating mode of the register file is controlled by the WE input. When

 

 

 

 

 

WE is ªlowº the device is in the write mode, the outputs are ªlowº and the data

 

 

 

 

 

present at Dn input is stored at the selected address, when WE is ªhigh,º the

 

 

 

 

 

device is in the read mode Ð the data state at the selected location is present

 

 

 

 

 

at the Qn outputs.

 

 

 

 

 

 

 

 

 

 

 

L SUFFIX

Address Access Time, 4.5 ns Typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CERAMIC PACKAGE

Power Dissipation, 700 mW Typical

 

 

 

 

 

 

 

CASE 620±10

Improved Noise Margin 150 mV (Over Operating Voltage and

 

 

 

 

 

 

Temperature Range)

 

 

 

 

 

 

 

 

 

 

P SUFFIX

Voltage Compensated

 

 

 

 

 

 

 

 

 

PLASTIC PACKAGE

MECL 10K-Compatible

 

 

 

 

 

 

 

 

 

CASE 648±08

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FN SUFFIX

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

PLCC

 

 

 

 

 

 

 

 

 

 

CASE 775±02

 

Characteristic

 

 

Symbol

 

Rating

 

Unit

 

 

 

 

 

Power Supply (VCC = 0)

 

 

 

VEE

 

±8.0 to 0

 

Vdc

 

TRUTH TABLE

 

Input Voltage (VCC = 0)

 

 

 

VI

 

0 to VEE

 

Vdc

 

 

 

 

 

 

 

 

 

 

 

 

Output Current Ð Continuous

 

 

Iout

 

50

 

mA

MODE

 

INPUT

OUTPUT

 

Ð Surge

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating Temperature Range

 

 

TA

 

0 to +75

 

°

 

CS

WE

Dn

Qn

 

 

 

 

C

Write ª0º

L

L

L

L

Storage Temperature Range Ð Plastic

 

Tstg

±55 to +150

°C

 

Write ª1º

L

L

H

L

 

 

 

Ð Ceramic

 

 

±55 to +165

 

ELECTRICAL CHARACTERISTICS (VEE = ±5.2 V ±5%) (See Note)

 

Read

L

H

X

Q

 

Disabled

H

X

X

L

 

 

 

 

0°

25°

75°

 

Characteristic

Symbol

Unit

Q-State of Addressed Cell

 

 

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

Power Supply Current

IE

Ð

160

Ð

163

Ð

165

mA

 

 

 

 

 

Input Current High

 

IinH

Ð

375

Ð

220

Ð

220

μA

 

 

DIP

 

 

Input Current Low

 

IinL

0.5

Ð

0.5

Ð

0.3

Ð

μA

PIN ASSIGNMENT

High Output Voltage

VOH

±1.02

±0.84

±0.98

±0.81

±0.92

±0.735

Vdc

 

 

 

 

 

Low Output Voltage

VOL

±1.95

±1.63

±1.95

±1.63

±1.95

±1.60

Vdc

Q1

1

 

16

VCC

High Input Voltage

 

VIH

±1.17

±0.84

±1.13

±0.81

±1.07

±0.735

Vdc

Q0

2

 

15

Q2

Low Input Voltage

 

VIL

±1.95

±1.48

±1.95

±1.48

±1.95

±1.45

Vdc

 

 

CS

3

 

14

Q3

NOTE:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Each MECL 10H series circuit has been designed to meet the dc specifications shown in the test table,

D1

4

 

13

WE

after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed

 

circuit board and transverse air flow greater than 500 Ifpm is maintained. Outputs are terminated through

D0

5

 

12

D3

a 50-ohm resistor to ±2.0 volts.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

6

 

11

D2

 

 

 

 

 

 

 

 

 

 

 

A2

7

 

10

A0

 

 

 

 

 

 

 

 

 

 

 

VEE

8

 

9

A1

Pin assignment is for Dual±in±Line Package.

For PLCC pin assignment, see the Pin Conversion

Tables on page 6±11 of the Motorola MECL Data

Book (DL122/D).

3/93

Motorola, Inc. 1996

2±233

REV 5

MC10H145

AC PARAMETERS

 

 

MC10H145

 

 

 

 

TA = 0 to +75°C,

 

 

 

 

VEE = ±5.2 Vdc ±5%

 

 

Characteristics

Symbol

Min

Max

Unit

Conditions

 

 

 

 

 

 

Read Mode

 

 

 

ns

Measured from 50% of input to 50%

Chip Select Access Time

tACS

0

4.0

 

of output. See Note 2.

Chip Select Recovery Time

tRCS

0

4.0

 

 

Address Access Time

tAA

0

6.0

 

 

Write Mode

 

 

 

ns

tWSA = 3.5 ns

Write Pulse Width

tW

6.0

Ð

 

Measured at 50% of input to 50% of

Data Setup Time Prior to Write

tWSD

0

Ð

 

output. tW = 6.0 ns.

Data Hold Time After Write

tWHD

1.5

Ð

 

 

Address Setup Time Prior to Write

tWSA

3.5

Ð

 

 

Address Hold Time After Write

tWHA

1.5

Ð

 

 

Chip Select Setup Time Prior to Write

tWSCS

0

Ð

 

 

Chip Select Hold Time After Write

tWHCS

1.5

Ð

 

 

Write Disable Time

tWS

1.0

4.0

 

 

Write Recovery Time

tWR

1.0

4.0

 

 

Chip Enable Strobe Mode

 

 

 

ns

Guaranteed but not tested on

Data Setup Prior to Chip Select

tCSD

0

Ð

 

standard product. See Figure 1.

Write Enable Setup Prior to Chip Select

tCSW

0

Ð

 

 

Address Setup Prior to Chip Select

tCSA

0

Ð

 

 

Data Hold Time After Chip Select

tCHD

1.0

Ð

 

 

Write Enable Hold Time After Chip Select

tCHW

0

Ð

 

 

Address Hold Time After Chip Select

tCHA

2.0

Ð

 

 

Chip Select Minimum Pulse Width

tCS

4.0

Ð

 

 

Rise and Fall Time

tr, tf

 

 

ns

Measured between 20% and 80%

Address to Output

 

0.6

2.5

 

points.

CS to Output

 

0.6

2.5

 

 

 

 

 

 

 

 

Capacitance

 

 

 

pF

Measured with a pulse technique.

Input Capacitance

Cin

Ð

6.0

 

 

Output Capacitance

Cout

Ð

8.0

 

 

NOTES: 1. Test circuit characteristics: RT = 50 Ω, MC10H145. CL p5.0 pF (including jig and Stray Capacitance). Delay should be derated 30 ps/pF for capacitive loads up to 50 pF.

2.The maximum Address Access Time is guaranteed to be the worst-case bit in the memory.

3.For proper use of MECL in a system environment, consult MECL System Design Handbook.

FIGURE 1 Ð CHIP ENABLE STROBE MODE

A

 

 

 

TCSD

TCHA

DIN

 

TCHD

 

 

WE

TCSW

TCHW

 

 

TCSA

TCS

 

CS

 

 

MOTOROLA

2±234

MECL Data

DL122 Ð Rev 6

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