Motorola 4N37, 4N36, 4N35 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N35/D

GlobalOptoisolator

6-Pin DIP Optoisolators

Transistor Output

The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

•Current Transfer Ratio Ð 100% Minimum @ Specified Conditions

•Guaranteed Switching Speeds

•Meets or Exceeds all JEDEC Registered Specifications

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ºVº must be included at end of part number. VDE 0884 is a test option.

Applications

•General Purpose Switching Circuits

•Interfacing and coupling systems of different potentials and impedances

•Regulation Feedback Circuits

•Monitor & Detection Circuits

•Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
INPUT LED
Reverse Voltage	VR	6	Volts
Forward Current Ð Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C	PD	120	mW
with Negligible Power in Output Detector
Derate above 25°C		1.41	mW/°C
OUTPUT TRANSISTOR
Collector±Emitter Voltage	VCEO	30	Volts
Emitter±Base Voltage	VEBO	7	Volts
Collector±Base Voltage	VCBO	70	Volts
Collector Current Ð Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Input LED
Derate above 25°C		1.76	mW/°C
TOTAL DEVICE
Isolation Source Voltage(1)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Ambient Operating Temperature Range(2)	T	± 55 to +100	°C
	A
Storage Temperature Range(2)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

1.Isolation surge voltage is an internal device dielectric breakdown rating.

1.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

4N35*

4N36

4N37

[CTR = 100% Min]

*Motorola Preferred Device

STYLE 1 PLASTIC

6

1

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1	6
2	5
3	4

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

REV 2

Motorola, Inc. 1995

4N35	4N36	4N37
ELECTRICAL CHARACTERISTICS (T				= 25°C unless otherwise noted)(1)
			A
			Characteristic				Symbol	Min	Typ(1)	Max	Unit
INPUT LED
Forward Voltage (IF = 10 mA)						TA = 25°C	VF	0.8	1.15	1.5	V
						TA = ±55°C		0.9	1.3	1.7
						TA = 100°C		0.7	1.05	1.4
Reverse Leakage Current (VR = 6 V)							IR	Ð	Ð	10	μA
Capacitance (V = 0 V, f = 1 MHz)							CJ	Ð	18	Ð	pF
OUTPUT TRANSISTOR
Collector±Emitter Dark Current (VCE = 10 V, TA = 25°C)							ICEO	Ð	1	50	nA
Collector±Emitter Dark Current (VCE = 30 V, TA = 100°C)								Ð	Ð	500	μA
Collector±Base Dark Current (VCB = 10 V)						TA = 25°C	ICBO	Ð	0.2	20	nA
						TA = 100°C			100	Ð
Collector±Emitter Breakdown Voltage (IC = 1 mA)							V(BR)CEO	30	45	Ð	V
Collector±Base Breakdown Voltage (IC = 100 μA)							V(BR)CBO	70	100	Ð	V
Emitter±Base Breakdown Voltage (IE = 100 μA)							V(BR)EBO	7	7.8	Ð	V
DC Current Gain (IC = 2 mA, VCE = 5 V)							hFE	Ð	400	Ð	Ð
Collector±Emitter Capacitance (f = 1 MHz, VCE = 0)							CCE	Ð	7	Ð	pF
Collector±Base Capacitance (f = 1 MHz, VCB = 0)							CCB	Ð	19	Ð	pF
Emitter±Base Capacitance (f = 1 MHz, VEB = 0)							CEB	Ð	9	Ð	pF
COUPLED
Output Collector Current						T = 25°C	I (CTR)(2)	10 (100)	30 (300)	Ð	mA (%)
						A	C
(IF = 10 mA, VCE = 10 V)						TA = ±55°C		4 (40)	Ð	Ð
						TA = 100°C		4 (40)	Ð	Ð
Collector±Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)							VCE(sat)	Ð	0.14	0.3	V
Turn±On Time							ton	Ð	7.5	10	μs
Turn±Off Time			(I = 2 mA, V			= 10 V,	toff	Ð	5.7	10
			C	CC
Rise Time			RL = 100		Ω)(3)		t	Ð	3.2	Ð
							r
Fall Time							tf	Ð	4.7	Ð
Isolation Voltage (f = 60 Hz, t = 1 sec)							VISO	7500	Ð	Ð	Vac(pk)
Isolation Current(4) (V		I±O	= 3550 Vpk)			4N35	I	Ð	Ð	100	μA
							ISO
Isolation Current (VI±O = 2500 Vpk)						4N36		Ð	Ð	100
Isolation Current (VI±O = 1500 Vpk)						4N37		Ð	8	100
Isolation Resistance (V = 500 V)(4)							RISO	1011	Ð	Ð	Ω
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)							CISO	Ð	0.2	2	pF

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For test circuit setup and waveforms, refer to Figure 11.

4.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2	Motorola Optoelectronics Device Data