Siemens HYM361120GS-60, HYM361120GS-70, HYM361120S-60, HYM361120S-70, HYM361140GS-60 Datasheet

1M × 36-Bit Dynamic RAM Module	HYM 361120/40S/GS-60/-70
(2M × 18-Bit Dynamic RAM Module)

Advanced Information

•1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit)

•Fast access and cycle time 60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

•12 decoupling capacitors mounted on substrate

•All inputs, outputs and clock fully TTL compatible

•72 pin Single in-Line Memory Module

•Utilizes four 1M × 1-DRAMs and eight 1M × 4-DRAMs in 300 mil SOJ packages

•Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version)

•Single + 5 V (± 10 %) supply

•Low power dissipation

max. 6820 mW active (-60 version) max. 6160 mW active (-70 version)

CMOS –	66 mW standby
TTL –	132 mW standby

•CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

Ordering Information

•1024 refresh cycles/16 ms

•Tin-Lead contact pads (S - version)

•Gold contact pads (GS - version)

•HYM 321140S: single sided module with

31.75mm (1250 mil) height

•HYM 321120S: double sided module with

25.40mm (1000 mil) height

Type	Ordering Code	Package	Descriptions
HYM 361140S-60	Q67100-Q959	L-SIM-72-8	DRAM module (access time 60 ns)
HYM 361140S-70	Q67100-Q958	L-SIM-72-8	DRAM module (access time 70 ns)
HYM 361120S-60	Q67100-Q942	L-SIM-72-3	DRAM module (access time 60 ns)
HYM 361120S-70	Q67100-Q741	L-SIM-72-3	DRAM module (access time 70 ns)
HYM 361140GS-60	Q67100-Q1019	L-SIM-72-8	DRAM module (access time 60 ns)
HYM 361140GS-70	Q67100-Q651	L-SIM-72-8	DRAM module (access time 70 ns)
HYM 361120GS-60	Q67100-Q961	L-SIM-72-3	DRAM module (access time 60 ns)
HYM 361120GS-70	Q67100-Q960	L-SIM-72-3	DRAM module (access time 70 ns)

Semiconductor Group

591

06.94

HYM 361120/40S/GS-60/-70 1M × 36-Bit

The HYM 361120/40S/GS-60/-70 is a 4 MByte DRAM module organized as 1 048 576 words by 36-bit in a 72-pin single-in-line package comprising four HYB 511000BJ 1M × 1 DRAMs and eight HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC board.

The HYM 361120/40S/GS-60/-70 can also be used as a 2 097 152 words by 18-bits dynamic RAM module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, …, DQ17 and DQ35, respectively.

Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.

The common I/O feature on the HYM 361120/40S/GS-60/-70 dictates the use of early write cycles.

Pin Definitions and Functions

Pin No.							Function
A0-A9							Address Inputs
DQ0-DQ35							Data Input/Output
		-					Column Address Strobe
CAS0				CAS3
							Row Address Strobe
RAS0,			RAS2
							Read/Write Input
WE
VCC							Power (+ 5 V)
VSS							Ground
PD							Presence Detect Pin
N.C.							No Connection
Presence Detect Pins
								-60	-70
PD0								VSS	VSS
PD1								VSS	VSS
PD2								N.C.	VSS
PD3								N.C.	N.C.

Semiconductor Group

592

HYM 361120/40S/GS-60/-70 1M × 36-Bit

Pin Configuration

(top view)

Semiconductor Group

593