NEW
IL221AT/IL222AT/IL223AT
PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
FEATURES
•High Current Transfer Ratio, IF=1 mA, IL221AT, 100% Minimum
IL222AT, 200% Minimum IL223AT, 500% Minimum
•Withstand Test Voltage, 2500 VACRMS
•Electrical Specifications Similar to Standard 6 Pin Coupler
•Industry Standard SOIC-8 Surface Mountable Package
•Standard Lead Spacing, .05"
•Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
•Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
•Underwriters Lab File #E52744 (Code Letter P)
Package Dimensions in Inches (mm) |
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.120±.005 |
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Anode 1 |
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8 NC |
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Cathode 2 |
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7 Base |
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(3.05±.13) |
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± |
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C .154.005 |
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.240 |
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L (3.91±.13) |
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NC |
3 |
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6 Collector |
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(6.10) |
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NC |
4 |
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5 Emitter |
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Pin One ID |
.016 |
(.41) |
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7° |
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.192±.005 |
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± |
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40° |
.058±.005 |
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.015.002 |
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(1.49±.13) |
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± |
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± |
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(.38.05) |
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(4.88.13) |
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.004 (.10) |
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.125±.005 |
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.008 |
(.20) |
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.008 |
(.20) |
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5° max. |
(3.18.13)± |
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.050 (1.27) |
.020±.004 |
R.010 |
Lead |
typ. |
(.25) |
max.Coplanarity |
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.040 (1.02) |
(.15±.10) |
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±.0015 (.04) |
2 plcs. |
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max. |
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TOLERANCE: ±.005 (unless otherwise noted)
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current transfer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector.
This device has a CTR tested at an 1 mA LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard SOIC- 8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.
Maximum Ratings
Emitter |
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Peak Reverse Voltage ............................................ |
6.0 |
V |
Continuous Forward Current ............................... |
60 mA |
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Power Dissipation at 25°C .................................. |
90 mW |
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Derate Linearly from 25°C ............................ |
1.2 mW/°C |
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Detector |
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Collector-Emitter Breakdown Voltage ..................... |
30 |
V |
Emitter-Collector Breakdown Voltage ....................... |
5 |
V |
Collector-Base Breakdown Voltage ........................ |
70 |
V |
Power Dissipation ............................................. |
150 mW |
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Derate Linearly from 25°C ........................... |
2.0 mW/°C |
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Package |
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Total Package Dissipation at 25°C Ambient |
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(LED + Detector) ........................................... |
240 mW |
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Derate Linearly from 25°C ........................... |
3.3 mW/°C |
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Storage Temperature ......................... |
–55°C to +150°C |
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Operating Temperature ..................... |
–55°C to +100°C |
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Soldering Time at 260°C .................................... |
10 sec. |
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Semiconductor Group
Characteristics (TA=25°C)
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Symbol Min. Typ. |
Max. |
Unit |
Condition |
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Emitter |
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Forward Voltage |
VF |
1.0 |
1.5 |
V |
IF=1mA |
Reverse Current |
IR |
0.1 |
100 |
µA |
VR=6.0 V |
Capacitance |
CO |
25 |
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pF |
VF=0 V, |
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F=1 MHz |
Detector |
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Breakdown Voltage |
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Collector-Emitter |
BVCEO |
30 |
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V |
IC=100 µA |
Emitter-Collector |
BVECO |
5 |
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V |
IE=100 µA |
Collector-Base Voltage |
BVCBO |
70 |
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IC=10 µA |
Collector-Emitter |
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Capacitance |
CCE |
3.4 |
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pF |
VCE=10 V |
Package |
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DC Current Transfer |
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IF=1 mA, |
Ratio |
CTRDC |
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VCE=5 V |
IL221AT |
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100 |
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IL222AT |
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200 |
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IL223AT |
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500 |
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Collector-Emitter |
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ICE=0.5 mA, |
Saturation Voltage |
VCE sat |
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1 |
V |
IF=1 mA |
Isolation Test |
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Voltage |
VIO |
2500 |
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VACRMS |
t=1 sec. |
Capacitance, |
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Input to Output |
CIO |
0.5 |
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pF |
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Resistance, |
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Input to Output |
RIO |
100 |
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GΩ |
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Specifications subject to change.
4–10 |
10.95 |
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