Siemens HYS64V16220GU-10, HYS64V16220GU-8, HYS64V16220GU-8B, HYS64V8200GU-10, HYS72V16220GU-10 Datasheet

3.3 V	8M × 64/72-Bit 1 Bank SDRAM Module	HYS 64/72V8200GU
3.3 V	16M × 64/72-Bit 2 Bank SDRAM Module	HYS 64/72V16220GU

168 pin unbuffered DIMM Modules

•168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

•1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization

•Optimized for byte-write non-parity or ECC applications

•JEDEC standard Synchronous DRAMs (SDRAM)

•Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification

•SDRAM Performance

		-8	-8B	-10	Units
fCK	Clock frequency (max.)	100	100	66	MHz
tAC	Clock access time	6	6	8	ns

• Programmed Latencies

Product Speed		CL	tRCD	tRP
-8	PC100	2	2	2
-8B	PC100	3	2	3
-10	PC66	2	2	2

•Single + 3.3 V (± 0.3 V ) power supply

•Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)

•Auto Refresh (CBR) and Self Refresh

•Decoupling capacitors mounted on substrate

•All inputs, outputs are LVTTL compatible

•Serial Presence Detect with E2PROM

•Utilizes 8M × 8 SDRAMs in TSOPII-54 packages

•4096 refresh cycles every 64 ms

•133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads

Semiconductor Group

1

1998-08-01

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 module specification.

The DIMMs have a serial presence detect, implemented with a serial E2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.

All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25“ ( 31.75 mm) height.

Ordering Information

Type	Ordering Code	Package	Descriptions	Module
				Height
HYS 64V8200GU-8	PC100-222-620	L-DIM-168-30	100 MHz 8M × 64 1 bank	1.25“
			SDRAM module
HYS 72V8200GU-8	PC100-222-620	L-DIM-168-30	100 MHz 8M × 72 1 bank	1.25“
			SDRAM module
HYS 64V16220GU-8	PC100-222-620	L-DIM-168-30	100 MHz 16M × 64 2 bank	1.25“
			SDRAM module
HYS 72V16220GU-8	PC100-222-620	L-DIM-168-30	100 MHz 16M × 72 2 bank	1.25“
			SDRAM module
HYS 64V8200GU-8B	PC100-323-620	L-DIM-168-30	100 MHz 8M × 64 1 bank	1.25“
			SDRAM module
HYS 64V16220GU-8B	PC100-323-620	L-DIM-168-30	100 MHz 16M × 64 2 bank	1.25“
			SDRAM module
HYS 64V8200GU-10	PC66-222-920	L-DIM-168-30	66 MHz 8M × 64 1 bank	1.25“
			SDRAM module
HYS 72V8200GU-10	PC66-222-920	L-DIM-168-30	66 MHz 8M × 72 1 bank	1.25“
			SDRAM module
HYS 64V16220GU-10	PC66-222-920	L-DIM-168-30	66 MHz 16M × 64 2 bank	1.25“
			SDRAM module
HYS 72V16220GU-10	PC66-222-920	L-DIM-168-30	66 MHz 16M × 72 2 bank	1.25“
			SDRAM module

Semiconductor Group

2

1998-08-01

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

Pin Names

A0 - A11

Address Inputs

CLK0 - CLK3

Clock Input

BA0, BA1

Bank Selects

DQMB0 -

Data Mask

DQMB7

DQ0 - DQ63

Data Input/Output

-

Chip Select

CS0

CS3

CB0 - CB7

Check Bits (× 72

VCC

Power (+ 3.3 Volt)

organization only)

Row Address Strobe

VSS

Ground

RAS

Column Address Strobe

SCL

Clock for Presence Detect

CAS

Read/Write Input

SDA

Serial Data Out for Presence Detect

WE

Clock Enable

N.C.

No Connection

CKE0,

CKE1

Address Format

Part Number

Rows

Columns

Bank

Refresh

Period

Interval

Select

8M × 64

HYS 64V8200GU

12

9

2

4k

64 ms

15.6 µs

8M × 72

HYS 72V8200GU

12

9

2

4k

64 ms

15.6 µs

16M × 64

HYS 64V16220GU

12

9

2

4k

64 ms

15.6 µs

16M × 72

HYS 72V16220GU

12

9

2

4k

64 ms

15.6 µs

Semiconductor Group

3

1998-08-01

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

Pin Configuration

PIN #		Symbol				PIN #			Symbol				PIN #		Symbol					PIN #		Symbol
1		VSS			43			VSS				85			VSS				127			VSS
2		DQ0			44			DU				86			DQ32				128
																						CKE0
3		DQ1			45							87			DQ33				129
									CS2													CS3
4		DQ2			46			DQMB2				88			DQ34				130			DQMB6
5		DQ3			47			DQMB3				89			DQ35				131			DQMB7
6		VCC			48			DU				90			VCC				132			NC
7		DQ4			49			VCC				91			DQ36				133			VCC
8		DQ5			50			NC				92			DQ37				134			NC
9		DQ6			51			NC				93			DQ38				135			NC
10		DQ7			52			NC (CB2)				94			DQ39				136			CB6
11		DQ8			53			NC (CB3)				95			DQ40				137			CB7
12		VSS			54			VSS				96			VSS				138			VSS
13		DQ9			55			DQ16				97			DQ41				139			DQ48
14		DQ10			56			DQ17				98			DQ42				140			DQ49
15		DQ11			57			DQ18				99			DQ43				141			DQ50
16		DQ12			58			DQ19				100			DQ44				142			DQ51
17		DQ13			59			VCC				101			DQ45				143			VCC
18		VCC			60			DQ20				102			VCC				144			DQ52
19		DQ14			61			NC				103			DQ46				145			NC
20		DQ15			62			DU				104			DQ47				146			DU
21		NC (CB0)			63							105			NC (CB4)				147			NC
								CKE1
22		NC (CB1)				64		VSS					106		NC (CB5)					148		VSS
23		VSS			65			DQ21				107			VSS				149			DQ53
24		NC			66			DQ22				108			NC				150			DQ54
25		NC			67			DQ23				109			NC				151			DQ55
26		VCC			68			VSS				110			VCC				152			VSS
27					69			DQ24				111							153			DQ56
		WE														CAS
28		DQMB0			70			DQ25				112			DQMB4				154			DQ57
29		DQMB1			71			DQ26				113			DQMB5				155			DQ58
30					72			DQ27				114							156			DQ59
		CS0														CS1
31		DU			73			VCC				115							157			VCC
															RAS
32		VSS			74			DQ28				116			VSS				158			DQ60
33		A0			75			DQ29				117			A1				159			DQ61
34		A2			76			DQ30				118			A3				160			DQ62
35		A4			77			DQ31				119			A5				161			DQ63
36		A6			78			VSS				120			A7				162			VSS
37		A8			79			CLK2				121			A9				163			CLK3
38		A10			80			NC				122			BA0				164			NC
39		BA1			81			WP				123			A11				165			SA0
40		VCC			82			SDA				124			VCC				166			SA1
41		VCC			83			SCL				125			CLK1				167			SA2
42		CLK0			84			VCC				126			NC				168			VCC
Note: Pinnames in brackets are for the x72 ECC versions
Semiconductor Group												4										1998-08-01

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

WE

CS0

DQMB0

CS

WE

CS

WE

DQM

DQMB4

DQM

DQ(7:0)

DQ0-DQ7

DQ(39:32)

DQ0-DQ7

D0

D4

CS

WE

CS

WE

DQMB1

DQM

DQMB5

DQM

DQ(15:8)

DQ0-DQ7

DQ(47:40)

DQ0-DQ7

D1

D5

CS

WE

DQM

CB(7:0)

DQ0-DQ7

D8

CS2

CS

WE

DQMB2

DQM

DQ(23:16)

DQ0-DQ7

D2

DQMB3

CS

WE

DQM

DQ(31:24)

DQ0-DQ7

D3

A0-A11, BA0, BA1

D0-D7, (D8)

VCC

D0-D7, (D8)

C0-C15, (C16, C17)

VSS

D0-D7, (D8)

D0-D7, (D8)

RAS

D0-D7, (D8)

CAS

CKE0

D0-D7, (D8)

Note: D8 is only used in the x72 ECC version.

				CS				WE
DQMB6				DQM
DQ(55:48)				DQ0-DQ7
								D6
					CS			WE
DQMB7				DQM
DQ(63:56)				DQ0-DQ7
								D7

E2PROM (256 word x 8 Bit)

	SA0		SA0
	SA1		SA1	SDA
	SA2		SA2		WP
	SCL		SCL							47 kΩ
			Clock Wiring
		16 M x 64						16 M x 72
CLK0	4 SDRAM + 3.3 pF					5 SDRAM
CLK1	Termination					Termination
CLK2	4 SDRAM + 3.3 pF					4 SDRAM + 3.3 pF
CLK3	Termination					Termination

SPB03958

Block Diagram for 8M × 64/72 SDRAM DIMM Modules (HYS 64/72V8200GU)

Semiconductor Group

5

1998-08-01

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

CS1

CS0

CS

CS

CS

CS

DQMB0

DQM

DQM

DQMB4

DQM

DQM

DQ(7:0)

DQ0-DQ7

DQ0-DQ7

DQ(39:32)

DQ0-DQ7

DQ0-DQ7

D0

D8

D4

D12

DQMB1

CS

CS

DQMB5

CS

CS

DQM

DQM

DQM

DQM

DQ(15:8)

DQ0-DQ7

DQ0-DQ7

DQ(47:40)

DQ0-DQ7

DQ0-DQ7

D1

D9

D5

D13

CS

CS

DQM

DQM

CB(7:0)

DQ0-DQ7

DQ0-DQ7

D16

D17

CS3

CS2

CS

CS

CS

CS

DQMB2

DQM

DQM

DQMB6

DQM

DQM

DQ(23:16)

DQ0-DQ7

DQ0-DQ7

DQ(55:48)

DQ0-DQ7

DQ0-DQ7

D2

D10

D6

D14

						CS					CS
DQMB3						DQM					DQM
DQ(31:24)						DQ0-DQ7					DQ0-DQ7
							D3				D11
A0-A11, BA0, BA1							D0-D15, (D16, D17)

VDD D0-D15, (D16, D17)

C0-C31, (C32...C35)

VSS D0-D7, (D8)

RAS, CAS, WE D0-D15, (D16, D17)

				CS		CS
DQMB7				DQM		DQM
DQ(63:56)				DQ0-DQ7		DQ0-DQ7
				D7		D15

E2PROM (256 word x 8 Bit)

SA0		SA0
SA1		SA1	SDA
SA2		SA2	WP
SCL		SCL

47 kΩ

CKE0					D0-D7, (D16)		Clock Wiring
				VDD
							16 M x 64		16 M x 72
				10 kΩ		CLK0	4 SDRAM + 3.3 pF		5 SDRAM
CKE1					D9-D15, (D17)	CLK1	4 SDRAM + 3.3 pF		5 SDRAM
						CLK2	4 SDRAM + 3.3 pF		4 SDRAM + 3.3 pF
						CLK3	4 SDRAM + 3.3 pF		4 SDRAM + 3.3 pF
Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ω except otherwise noted.										SPB03769

Block Diagram for 16M × 64/72 SDRAM DIMM Modules (HYS 64/72V1620GU)

Semiconductor Group

6

1998-08-01