Siemens HYM72V1645GU-50, HYM72V1645GU-60, HYM72V1605GU-50, HYM72V1605GU-60, HYM64V1605GU-50 Datasheet

3.3V 16M × 64-Bit EDO-DRAM Module	HYM64V1605GU-50/-60
3.3V 16M x 72-Bit EDO-DRAM Module	HYM64V1645GU-50/-60
	HYM72V1605GU-50/-60
168pin unbuffered DIMM Module	HYM72V1645GU-50/-60
with serial presence detect

•168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications

•1 bank 16M x 64, 16M x 72 in 4k and 8k refresh organisations

•Optimized for byte-write non-parity or ECC applications

•Extended Data Out (EDO)

•Performance:

		-50	-60
tRAC	RAS Access Time	50 ns	60 ns
tCAC	CAS Access Time	13 ns	15 ns
tAA	Access Time from Address	25 ns	30 ns
tRC	Cycle Time	84 ns	104 ns
tHPC	EDO Mode Cycle Time	20 ns	25 ns

•Single +3.3 V ± 0.3 V Power Supply

•CAS-before-RAS refresh, RAS-only-refresh

•Decoupling capacitors mounted on substrate

•All inputs, outputs and clocks are fully LV-TTL compatible

•Serial presence detects (optional)

•Utilizes 16M x 4 -DRAMs in TSOPII packages

•4096 refresh cycles / 64 ms with 12 / 12 addressing ( Row / Column) for HYM64/72V1605GU

•8192 refresh cycles / 128 ms with 13 / 11 addressing ( Row / Column) for HYM64/72V1645GU

•Gold contact pads

•Card Size: 133,35mm x 32,00 mm x 4,00 mm

•This DRAM product module family is intended to be fully pin and architecture compatible with the 168pin unbuffered SDRAM DIMM module family

Semiconductor Group

1

2.97

HYM 64(72)V1605/45GU-50/-60

16M x 64/72 DRAM Module

The HYM64(72)V1605/45GU-50/-60 are industry standard 168-pin 8-byte Dual In-Line Memory Modules (DIMMs) which are organized as 16M x 64 and 16M x 72 high speed memory arrays designed with EDO DRAMs for non-parity and ECC applications. 4k refresh with 12 / 12 addressing and 8k refresh modules with 13 / 11 addressing are available. The DIMMs use sixteen 16M x 4 EDO DRAMs for the 16M x 64 organisation and eighteen 16M x 4 DRAMs for the 16M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board.

The DIMMs use optional serial presence detects implemented via a serial E 2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes of serial PD data are available to the customer.

All 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long spacesaving footprint.

Ordering Information

Type	Ordering	Package	Descriptions
	Code
4k-Refresh:
HYM 64V1605GU-50	Q67100-Q2192	L-DIM-168-14	16M x 64 DRAM module (access time 50 ns)
HYM 64V1605GU-60	Q67100-Q2193	L-DIM-168-14	16M x 64 DRAM module (access time 60 ns)
HYM 72V1605GU-50	Q67100-Q2194	L-DIM-168-14	16M x 72 DRAM module (access time 50 ns)
HYM 72V1605GU-60	Q67100-Q2195	L-DIM-168-14	16M x 72 DRAM module (access time 60 ns)
8k-Refresh:
HYM 64V1645GU-50	Q67100-Q2245	L-DIM-168-14	16M x 64 DRAM module (access time 50 ns)
HYM 64V1645GU-60	Q67100-Q2246	L-DIM-168-14	16M x 64 DRAM module (access time 60 ns)
HYM 72V1645GU-50		L-DIM-168-14	16M x 72 DRAM module (access time 50 ns)
HYM 72V1645GU-60		L-DIM-168-14	16M x 72 DRAM module (access time 60 ns)

Semiconductor Group

2

HYM 64(72)V1605/45GU-50/-60

16M x 64/72 DRAM Module

Pin Names

A0-A11

Row Address Input for HYB64/72V1605

A0-A11

Column Address Input for HYB64/72V1605

A0-A12

Row Address Input for HYB64/72V1645

A0-A10

Column Address Input for HYB64/72V1645

DQ0 - DQ63

Data Input/Output

CB0-CB7

Check Bit Data Input/Output ( x72 only)

RAS0,

RAS2

Row Address Strobe

CAS0

-

CAS7

Column Address Strobe

WE0,

WE2

Read / Write Input

OE0,

OE2

Output Enable

Vcc

Power (+3.3 Volt)

Vss

Ground

SCL

Clock for Presence Detect

SDA

Serial Data Out for Presence Detect

SA0-SA2

Serial Presence Detect Addresses

N.C.

No Connection

DU

Don’t use

Semiconductor Group

3

HYM 64(72)V1605/45GU-50/-60

16M x 64/72 DRAM Module

Pin Configuration

PIN #	Symbol	PIN #	Symbol		PIN #	Symbol	PIN #	Symbol
1	VSS	43	VSS		85	VSS	127	VSS
2	DQ0	44	OE2		86	DQ32	128	DU
3	DQ1	45	RAS2		87	DQ33	129	NC
4	DQ2	46	CAS2		88	DQ34	130	CAS6
5	DQ3	47	CAS3		89	DQ35	131	CAS7
6	VCC	48	WE2		90	VCC	132	DU
7	DQ4	49	VCC		91	DQ36	133	VCC
8	DQ5	50	NC		92	DQ37	134	NC
9	DQ6	51	NC		93	DQ38	135	NC
10	DQ7	52	CB3		94	DQ39	136	CB6
11	DQ8	53	CB3		95	DQ40	137	CB7
12	VSS	54	VSS		96	VSS	138	VSS
13	DQ9	55	DQ16		97	DQ41	139	DQ48
14	DQ10	56	DQ17		98	DQ42	140	DQ49
15	DQ11	57	DQ18		99	DQ43	141	DQ50
16	DQ12	58	DQ19		100	DQ44	142	DQ51
17	DQ13	59	VCC		101	DQ45	143	VCC
18	VCC	60	DQ20		102	VCC	144	DQ52
19	DQ14	61	NC		103	DQ46	145	NC
20	DQ15	62	DU		104	DQ47	146	DU
21	CB0	63	NC		105	CB4	147	NC
22	CB1	64	VSS		106	CB5	148	VSS
23	VSS	65	DQ21		107	VSS	149	DQ53
24	NC	66	DQ22		108	NC	150	DQ54
25	NC	67	DQ23		109	NC	151	DQ55
26	VCC	68	VSS		110	VCC	152	VSS
27	WE0	69	DQ24		111	DU	153	DQ56
28	CAS0	70	DQ25		112	CAS4	154	DQ57
29	CAS1	71	DQ26		113	CAS5	155	DQ58
30	RAS0	72	DQ27		114	NC	156	DQ59
31	OE0	73	VCC		115	DU	157	VCC
32	VSS	74	DQ28		116	VSS	158	DQ60
33	A0	75	DQ29		117	A1	159	DQ61
34	A2	76	DQ30		118	A3	160	DQ62
35	A4	77	DQ31		119	A5	161	DQ63
36	A6	78	VSS		120	A7	162	VSS
37	A8	79	NC		121	A9	163	NC
38	A10	80	NC		122	A11	164	NC
39	A12	81	NC		123	NC	165	SA0
40	VCC	82	SDA		124	VCC	166	SA1
41	VCC	83	SCL		125	DU	167	SA2
42	DU	84	VCC		126	DU	168	VCC

Semiconductor Group

4

HYM 64(72)V1605/45GU-50/-60

16M x 64/72 DRAM Module

RAS0

WE0

OE0

CAS0

DQ0-DQ3 I/O1-I/O4

D0

DQ4-DQ7 I/O1-I/O4

										D1
	CAS1						I/O1-I/O4
	DQ8-DQ11
										D2
	DQ12-DQ15						I/O1-I/O4
										D3
CAS2
DQ16-DQ19							I/O1-I/O4
										D4
D20-DQ23							I/O1-I/O4
										D5
CAS3
DQ24-DQ27							I/O1-I/O4
										D6

DQ28-DQ31 I/O1-I/O4

D7

A0-A11,(A12) D0-D15

VCC

C0-C15

VSS

RAS2

WE2

OE2

CAS4

I/O1-I/O4

DQ32-DQ35

D8

D36-DQ39

I/O1-I/O4

D9

CAS5

I/O1-I/O4

DQ40-DQ43

D10

DQ44-DQ47

I/O1-I/O4

D11

CAS6

DQ48-DQ51

I/O1-I/O4

D12

DQ52-DQ55

I/O1-I/O4

D13

CAS7

DQ56-DQ59

I/O1-I/O4

D14

DQ60-DQ63 I/O1-I/O4

D15

E2PROM (256wordx8bit)

SA0

SA1 SCL

SA2 SDA

4M x 64 DIMM Module Block Diagram

Semiconductor Group

5

HYM 64(72)V1605/45GU-50/-60

16M x 64/72 DRAM Module

RAS0

RAS2

WE0

WE2

OE0

OE2

CAS0

I/O1-I/O4

CAS4

I/O1-I/O4

DQ0-DQ3

DQ32-DQ35

D0

D8

DQ4-DQ7

I/O1-I/O4

D36-DQ39

I/O1-I/O4

D1

D9

CAS1

I/O1-I/O4

CAS5

I/O1-I/O4

DQ8-DQ11

DQ40-DQ43

D2

D10

DQ12-DQ15

I/O1-I/O4

DQ44-DQ47

I/O1-I/O4

D3

D11

CB0-CB3

I/O1-I/O4

CB4-CB7

I/O1-I/O4

D16

D17

CAS2

CAS6

DQ16-DQ19

I/O1-I/O4

DQ48-DQ51

I/O1-I/O4

D4

D12

D20-DQ23

I/O1-I/O4

DQ52-DQ55

I/O1-I/O4

D5

D13

CAS3

CAS7

DQ24-DQ27

I/O1-I/O4

DQ56-DQ59

I/O1-I/O4

D6

D14

DQ28-DQ31

I/O1-I/O4

DQ60-DQ63

I/O1-I/O4

D7

D15

A0-A11,(A12)

D0-D17

E2PROM (256wordx8bit)

VCC

SA0

C0-C17

VSS

SA1

SCL

SA2

SDA

4M x 72 DIMM Module Block Diagram

Semiconductor Group

6