FEATURES
•Alternate Source to TLP621-2/-4 and TLP621GB-2/-4
•Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
•Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA
ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min.
•High Collector-Emitter Voltage, BVCEO=70 V
•Dual and Quad Packages Feature:
-Reduced Board Space
-Lower Pin and Parts Count
-Better Channel to Channel CTR Match
-Improved Common Mode Rejection
•Field-Effect Stable by TRIOS (TRansparent IOn Shield)
•Isolation Test Voltage from Double Molded Package, 5300 VACRMS
•Underwriters Lab File #E52744
•VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter |
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Reverse Voltage ................................................. |
6 V |
Forward Current ........................................... |
60 mA |
Surge Current ................................................. |
1.5 A |
Power Dissipation....................................... |
100 mW |
Derate from 25°C ................................ |
1.33 mW/°C |
Detector |
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Collector-Emitter Reverse Voltage |
...................70 V |
Collector Current .......................................... |
50 mA |
Collector Current (t <1 ms).......................... |
100 mA |
Power Dissipation....................................... |
150 mW |
Derate from 25°C .................................... |
–2 mW/°C |
Package |
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Isolation Test Voltage |
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(t=1 sec.) ......................................... |
7500 VACPK |
(t=1 min.) ....................................... |
5300 VACRMS |
Package Dissipation ILD620/GB............... |
400 mW |
Derate from 25°C ............................... |
5.33 mW/°C |
Package Dissipation ILQ620/GB .............. |
500 mW |
Derate from 25°C ............................... |
6.67 mW/°C |
Creepage ............................................... |
7 mm min. |
Clearance............................................... |
7 min min. |
Isolation Resistance |
≥1012 Ω |
VIO=500 V, TA=25°C ............................... |
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VIO=500 V, TA=100°C ............................. |
≥1011 Ω |
Storage Temperature................... |
–55°C to +150°C |
Operating Temperature ................ |
–55°C to +100°C |
Junction Temperature.................................... |
100°C |
Soldering Temperature |
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(2 mm from case bottom).......................... |
260°C |
DUAL CHANNEL ILD621/621GB QUAD CHANNEL ILQ621/621GB
MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER
Dimensions in inches (mm) |
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4 |
3 |
2 |
1 |
Pin One I.D. |
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.268 (6.81) |
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Anode |
1 |
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8 |
Emitter |
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.255 (6.48) |
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Cathode |
2 |
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7 |
Collector |
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5 |
6 |
7 |
8 |
Cathode |
3 |
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6 |
Collector |
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.390 (9.91) |
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Anode |
4 |
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5 |
Emitter |
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.379 (9.63) |
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.045 (1.14) |
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.305 typ. |
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(7.75) typ. |
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.030 (.76) |
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.150 (3.81) |
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.130 (3.30) |
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.135 (3.43) |
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4° |
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.040 (1.02) |
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10° |
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.115 (2.92) |
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Typ. |
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.030 (.76 ) |
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Typ. |
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.022 (.56) |
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3°–9° |
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.018 (.46) |
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.012 (.30) |
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.100 (2.54) |
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.008 (.20) |
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Typ. |
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Pin One I.D. |
Anode |
1 |
16 |
Emitter |
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Cathode |
2 |
15 |
Collector |
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.268 (6.81) |
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Cathode |
3 |
14 |
Collector |
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Anode |
4 |
13 |
Emitter |
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.255 (6.48) |
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Anode |
5 |
12 |
Emitter |
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Cathode |
6 |
11 |
Collector |
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.790 (20.07) |
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Cathode |
7 |
10 |
Collector |
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.779 (19.77 ) |
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Anode |
8 |
9 |
Emitter |
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.045 (1.14) |
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.305 typ. |
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(7.75) typ. |
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.030 (.76) |
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.150 (3.81) |
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.130 (3.30) |
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.135 (3.43) |
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4° |
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.040 (1.02) |
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10° |
.115 (2.92) |
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Typ. |
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.030 (.76 ) |
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Typ. |
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.022 (.56) |
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3°–9° |
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.018 (.46) |
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.012 (.30) |
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.100 (2.54) |
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.008 (.20) |
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Typ. |
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DESCRIPTION |
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The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a
minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of 50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
5–1
Characteristics
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Symbol |
Min. |
Typ. |
Max. |
Unit |
Condition |
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Emitter |
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Forward Voltage |
VF |
1 |
1.15 |
1.3 |
V |
IF=10 mA |
Reverse Current |
IR |
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0.01 |
10 |
µA |
VR=6 V |
Capacitance |
CO |
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40 |
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pF |
VF=0 V, f=1 MHz |
Thermal Resistance, Junction to Lead |
RTHJL |
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750 |
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°C/W |
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Detector |
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Capacitance |
CCE |
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6.8 |
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pF |
VCE=5 V, f=1 MHz |
Collector-Emitter Leakage Current |
ICEO |
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10 |
100 |
nA |
VCE=24 V |
Collector-Emitter Leakage Current |
ICEO |
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2 |
50 |
µA |
TA=85°C, VCE=24 V |
Thermal Resistance, Junction to Lead |
RTHJL |
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500 |
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°C/W |
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Package Transfer Characteristics |
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Channel/Channel CTR Match |
CTRX/CTRY |
1 to 1 |
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3 to 1 |
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IF=5 mA, VCE=5 V |
ILD/Q621 |
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Saturated Current Transfer Ratio |
CTRCEsat |
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60 |
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% |
IF=1 mA, VCE=0.4 V |
Current Transfer Ratio |
CTRCE |
50 |
80 |
600 |
% |
IF=5 mA, VCE=5 V |
Collector-Emitter Saturation Voltage |
VCEsat |
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0.4 |
V |
IF=8 mA, ICE=2.4 mA |
ILD/Q621GB |
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Saturated Current Transfer Ratio |
CTRCEsat |
30 |
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% |
IF=1 mA, VCE=0.4 V |
Current Transfer Ratio (Collector-Emit- |
CTRCE |
100 |
200 |
600 |
% |
IF=5 mA, VCE=5 V |
ter) |
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Collector-Emitter Saturation Voltage |
VCEsat |
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0.4 |
V |
IF=8 mA, ICE=0.2 mA |
Isolation and Insulation |
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Common Mode Rejection, Output High |
CMH |
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5000 |
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V/µs |
VCM=50 VP-P, RL=1 kΩ, IF=0 mA |
Common Mode Rejection, Output Low |
CML |
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5000 |
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V/µs |
VCM=50 VP-P, RL=1 kΩ, IF=10 |
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mA |
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Common Mode Coupling Capacitance |
CCM |
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0.01 |
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pF |
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Package Capacitance |
CI-O |
0.8 |
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pF |
VIO=0 V, f=1 MHz |
Insulation Resistance |
RS |
1012 |
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Ω |
VIO=500 V, TA=25°C |
Channel to Channel Insulation |
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500 |
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VAC |
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Switching Times
Figure 1. Non-saturated switching timing
IF
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tPHL |
tPLH |
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V0 |
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tS |
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50% |
tD |
tF |
tR |
Figure 2. Non-saturated switching timing
VCC=5 V
IF=10 mA |
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F=10 KHz, |
VO |
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RL=75 W |
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DF=50 % |
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Characteristic |
Symbol |
Typ. |
Unit |
Test |
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Condition |
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On Time |
TON |
3.0 |
µs |
IF=±10 mA |
Rise Time |
tR |
20 |
µs |
VCC=5 V |
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Off Time |
tOFF |
2.3 |
µs |
RL=75 Ω |
Fall Time |
tF |
2.0 |
µs |
50% of VPP |
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Propagation H-L |
tPHL |
1.1 |
µs |
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Propagation L-H |
tPLH |
2.5 |
µs |
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ILD/Q621/GB
5–2
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