Siemens ILD5, ILQ2, ILD2, ILQ5, ILQ1 Datasheet
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FEATURES
•Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min.
ILD/Q2, 100% Min. ILD/Q5, 50% Min.
•High Collector-Emitter Voltage
ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V
•Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VACRMS
•Underwriters Lab File #E52744
• D E VDE 0884 Available with Option 1 |
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Maximum Ratings (Each Channel) |
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Emitter |
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Reverse Voltage ................................................ |
6 V |
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Forward Current ........................................... |
60 mA |
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Surge Current................................................. |
2.5 A |
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Power Dissipation....................................... |
100 mW |
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Derate Linearly from 25°C..................... |
1.3 mW/°C |
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Detector |
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Collector-Emitter Reverse Voltage |
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ILD/Q1 ........................................................... |
50 V |
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ILD/Q2, ILD/Q5............................................... |
70 V |
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Collector Current .......................................... |
50 mA |
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Collector Current (t<1 ms)........................... |
400 mA |
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Power Dissipation....................................... |
200 mW |
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Derate Linearly from 25°C...................... |
2.6 mW/°C |
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Package |
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Isolation Test Voltage (between |
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emitter and detector referred to |
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standard climate 23°C/50%RH, |
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DIN 50014) .................................... |
5300 VACRMS |
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Creepage ............................................... |
min. 7 mm |
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Clearance............................................... |
min. 7 mm |
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Isolation Resistance |
RIO=1012 Ω |
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VIO=500 V, TA=25°C ......................... |
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VIO=500 V, TA=100°C ....................... |
RIO=1011Ω |
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Package Power Dissipation ...................... |
250 mW |
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Derate Linearly from 25°C..................... |
3.3 mW/°C |
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Storage Temperature................... |
–40°C to +150°C |
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Operating Temperature ................ |
–40°C to +100°C |
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Junction Temperature.................................... |
100°C |
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Soldering Temperature |
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(2 mm from case bottom) .......................... |
260°C |
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DUAL CHANNEL ILD1/2/5
QUAD CHANNEL ILQ1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
Dimensions in inches (mm) |
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Dual Channel |
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4 |
3 |
2 |
Pin One I.D. |
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1 |
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Anode |
1 |
8 |
Emitter |
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.268 (6.81) |
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Cathode |
2 |
7 |
Collector |
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.255 (6.48) |
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Cathode |
3 |
6 |
Collector |
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5 |
6 |
7 |
8 |
4 |
5 |
Emitter |
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.390 (9.91) |
Anode |
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.379 (9.63) |
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.305 Typ. |
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.045 (1.14) |
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.030 (.76) |
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(7.75) Typ. |
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.150 (3.81) |
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.130 (3.30) |
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.135 (3.43) |
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4° Typ. |
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10° Typ. |
.115 (2.92) |
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.040 (1.02) |
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3°–9° |
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.022 (.56) |
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.030 (.76 ) |
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.018 (.46) |
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.100 (2.54) Typ. |
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.012 (.30) |
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.008 (.20) |
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Quad Channel |
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Pin One I.D. Anode |
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1 |
16 Emitter |
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Cathode |
2 |
15 Collector |
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.268 (6.81) |
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Cathode |
3 |
14 Collector |
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Anode |
4 |
13 Emitter |
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.255 (6.48) |
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Anode |
5 |
12 Emitter |
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Cathode |
6 |
11 Collector |
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.790 (20.07) |
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Cathode |
7 |
10 |
Collector |
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.779 (19.77 ) |
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Anode |
8 |
9 |
Emitter |
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.045 (1.14) |
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.150 (3.81) |
.305 Typ. |
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.030 (.76) |
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.130 (3.30) |
(7.75) Typ. |
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.135 (3.43) |
4° Typ. |
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10° Typ. |
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.115 (2.92) |
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.040 (1.02) |
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3°–9° |
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.022 (.56) |
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.030 (.76 ) |
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.012 (.30) |
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.018 (.46) |
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.100 (2.54) Typ. |
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.008 (.20) |
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DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per package.
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
5–1
Characteristics
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Symbol |
Min. |
Typ. |
Max. |
Unit |
Condition |
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Emitter |
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Forward Voltage |
VF |
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1.25 |
1.65 |
V |
IF=60 mA |
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Reverse Current |
IR |
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0.01 |
10 |
µA |
VR=6 V |
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Capacitance |
C0 |
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25 |
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pF |
VR=0 V, f=1 MHz |
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Thermal Resistance, Junction to Lead |
RTHJL |
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750 |
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°C/W |
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Detector |
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Capacitance |
CCE |
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6.8 |
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pF |
VCE=5 V, f=1 MHz |
Leakage Current, Collector-Emitter |
ICEO |
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5 |
50 |
nA |
VCE=10 V |
Saturation Voltage, Collector-Emitter |
VCESAT |
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0.25 |
0.4 |
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ICE=1 mA, IB=20 µA |
DC Forward Current Gain |
HFE |
200 |
650 |
1800 |
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VCE= 10 V, IB=20 µA |
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Saturated DC Forward Current Gain |
HFESAT |
120 |
400 |
600 |
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VCE= 0.4 V, IB=20 µA |
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Thermal Resistance, Junction to Lead |
RTHJL |
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500 |
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°C/W |
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Package Transfer Characteristics (Each Channel)
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Symbol |
Min. |
Typ. |
Max. |
Unit |
Condition |
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ILD/Q1 |
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Saturated Current Transfer Ratio (Collector-Emitter) |
CTRCESAT |
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75 |
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% |
IF=10 mA, VCE=0.4 V |
Current Transfer Ratio (Collector-Emitter) |
CTRCE |
20 |
90 |
300 |
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IF=10 mA, VCE=10 V |
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ILD/Q2 |
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Saturated Current Transfer Ratio (Collector-Emitter) |
CTRCESAT |
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170 |
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% |
IF=10 mA, VCE=0.4 V |
Current Transfer Ratio (Collector-Emitter) |
CTRCE |
100 |
200 |
500 |
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IF=10 mA, VCE=10 V |
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ILD/Q5 |
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Saturated Current Transfer Ratio (Collector-Emitter) |
CTRCESAT |
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100 |
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% |
IF=10 mA, VCE=0.4 V |
Current Transfer Ratio (Collector-Emitter) |
CTRCE |
50 |
130 |
400 |
% |
IF=10 mA, VCE =10 V |
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Isolation and Insulation |
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Common Mode Rejection, Output High |
CMH |
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5000 |
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V/µs |
VCM=50 VP-P, RL=1 kΩ, IF=0 mA |
Common Mode Rejection, Output Low |
CML |
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5000 |
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V/µs |
VCM=50 VP-P, RL=1 kΩ, IF=10 mA |
Common Mode Coupling Capacitance |
CCM |
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0.01 |
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pF |
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Package Capacitance |
CIO |
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0.8 |
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pF |
VIO=0 V, f=1 MHz |
ILD/Q1/2/5
5–2
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