DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA316; BA317; BA318
High-speed diodes
Product specification |
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1996 Sep 03 |
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Supersedes data of April 1996 |
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Philips Semiconductors |
Product specification |
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High-speed diodes |
BA316; BA317; BA318 |
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FEATURES |
DESCRIPTION |
∙Hermetically sealed leaded glass SOD27 (DO-35) package
∙High switching speed: max. 4 ns
∙General application
∙Continuous reverse voltage: 10 V, 30 V, 50 V
∙Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V
∙Repetitive peak forward current: max. 225 mA.
∙ High-speed switching.
The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
k |
a |
MAM246
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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− |
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BA316 |
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− |
15 |
V |
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BA317 |
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− |
40 |
V |
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BA318 |
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− |
60 |
V |
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VR |
continuous reverse voltage |
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BA316 |
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− |
10 |
V |
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BA317 |
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− |
30 |
V |
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BA318 |
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− |
50 |
V |
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IF |
continuous forward current |
see Fig.2; note 1 |
− |
100 |
mA |
IFRM |
repetitive peak forward current |
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− |
225 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
− |
4 |
A |
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t = 1 ms |
− |
1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
− |
350 |
mW |
Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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− |
200 |
°C |
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed diodes |
BA316; BA317; BA318 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
− |
700 |
mV |
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IF = 10 mA |
− |
850 |
mV |
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IF = 100 mA |
− |
1100 |
mV |
IR |
reverse current |
see Fig.5 |
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BA316 |
VR = 10 V |
− |
200 |
nA |
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VR = 10 V; Tj = 150 °C |
− |
100 |
μA |
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BA317 |
VR = 10 V |
− |
50 |
nA |
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VR = 30 V |
− |
200 |
nA |
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VR = 30 V; Tj = 150 °C |
− |
100 |
μA |
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BA318 |
VR = 30 V |
− |
50 |
nA |
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VR = 50 V |
− |
200 |
nA |
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VR = 50 V; Tj = 150 °C |
− |
100 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
2 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
− |
4 |
ns |
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IR = 60 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 50 mA; |
− |
2.5 |
V |
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tr = 20 ns; see Fig.8 |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length 10 mm |
240 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
lead length 10 mm; note 1 |
500 |
K/W |
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03 |
3 |