Philips 74HCT03PW, 74HCT03N, 74HCT03DB, 74HCT03D, 74HC03PW Datasheet

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Philips 74HCT03PW, 74HCT03N, 74HCT03DB, 74HCT03D, 74HC03PW Datasheet

INTEGRATED CIRCUITS

DATA SHEET

For a complete data sheet, please also download:

The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications

The IC06 74HC/HCT/HCU/HCMOS Logic Package Information

The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines

74HC/HCT03

Quad 2-input NAND gate

Product specification

 

December 1990

File under Integrated Circuits, IC06

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

 

 

Quad 2-input NAND gate

74HC/HCT03

 

 

 

 

FEATURES

·Level shift capability

·Output capability: standard (open drain)

·ICC category: SSI

GENERAL DESCRIPTION

The 74HC/HCT03 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns

The 74HC/HCT03 provide the 2-input NAND function.

The 74HC/HCT03 have open-drain N-transistor outputs, which are not clamped by a diode connected to VCC. In the OFF-state, i.e. when one input is LOW, the output

may be pulled to any voltage between GND and VOmax. This allows the device to be used as a LOW-to-HIGH or

HIGH-to-LOW level shifter. For digital operation and OR-tied output applications, these devices must have a pull-up resistor to establish a logic HIGH level.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

 

 

HC

HCT

 

 

 

 

 

 

 

 

 

 

tPZL/ tPLZ

propagation delay

CL = 15 pF; RL = 1 kW; VCC = 5 V

8

10

ns

CI

input capacitance

 

3.5

3.5

pF

CPD

power dissipation capacitance per gate

notes 1, 2 and 3

4.0

4.0

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in mW):

PD = CPD ´ VCC2´ fi + å (CL ´ VCC2 ´ fo) + å (VO2/RL) ´ duty factor LOW, where:

fi = input frequency in MHz fo = output frequency in MHz VO = output voltage in V

CL = output load capacitance in pF VCC = supply voltage in V

RL = pull-up resistor in MW

å(CL ´ VCC2 ´ fo) = sum of outputs

å(VO2/RL) = sum of outputs

2.For HC the condition is VI = GND to VCC

For HCT the condition is VI = GND to VCC - 1.5 V

3.The given value of CPD is obtained with: CL = 0 pF and RL = ¥

ORDERING INFORMATION

See “74HC/HCT/HCU/HCMOS Logic Package Information”.

December 1990

2

Philips Semiconductors

 

Product specification

 

 

 

Quad 2-input NAND gate

74HC/HCT03

 

 

 

PIN DESCRIPTION

 

 

 

 

 

PIN NO.

SYMBOL

NAME AND FUNCTION

 

 

 

1, 4, 9, 12

1A to 4A

data inputs

2, 5, 10, 13

1B to 4B

data inputs

3, 6, 8, 11

1Y to 4Y

data outputs

7

GND

ground (0 V)

14

VCC

positive supply voltage

Fig.1

Pin configuration.

 

Fig.2 Logic symbol.

 

 

Fig.3 IEC logic symbol.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FUNCTION TABLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INPUTS

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

nA

 

nB

nY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

Z

 

 

 

 

 

 

L

 

H

Z

 

 

 

 

 

 

H

 

L

Z

 

 

 

 

 

 

H

 

H

L

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

 

 

 

 

 

 

 

 

 

1. H = HIGH voltage level

 

 

 

 

 

L = LOW voltage level

 

 

 

 

 

Z = high impedance OFF-state

Fig.4

Functional diagram.

 

Fig.5 Logic diagram (one gate).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

December 1990

3

 

 

 

 

 

 

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