Philips 74ABT245-1PW, 74ABT245-1DB, 74ABT245D, 74ABT245PW, 74ABT245N Datasheet
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INTEGRATED CIRCUITS
74ABT245
Octal transceiver with direction pin (3-State)
Product specification
1998 Jan 16
Supersedes data of 1996 Sep 10 IC23 Data Handbook
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Philips Semiconductors |
Product specification |
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Octal transceiver with direction pin (3-State) |
74ABT245 |
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FEATURES
•Octal bidirectional bus interface
•3-State buffers
•Output capability: +64mA/±32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 833 Method 3015 and 200 V per Machine Model
•Power-up 3-State
•Live insertion/extraction permitted
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
DESCRIPTION
The 74ABT245 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT245 device is an octal transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features an Output Enable (OE) input for easy cascading and a Direction (DIR) input for direction control.
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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Tamb = 25°C; GND = 0V |
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tPLH |
Propagation delay |
CL = 50pF; VCC = 5V |
2.2 |
ns |
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tPHL |
An to Bn or Bn to An |
2.9 |
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CIN |
Input capacitance DIR, |
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VI = 0V or VCC |
4 |
pF |
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OE |
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CI/O |
I/O pin capacitance |
Outputs disabled; VO = 0V or VCC |
7 |
pF |
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ICCZ |
Total supply current |
Outputs disabled; VCC =5.5V |
50 |
μA |
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ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
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20-Pin Plastic DIP |
±40°C to +85°C |
74ABT245 N |
74ABT245 N |
SOT146-1 |
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20-Pin plastic SO |
±40°C to +85°C |
74ABT245 D |
74ABT245 D |
SOT163-1 |
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20-Pin Plastic SSOP Type II |
±40°C to +85°C |
74ABT245 DB |
74ABT245 DB |
SOT339-1 |
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20-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74ABT245 PW |
74ABT245PW DH |
SOT360-1 |
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PIN CONFIGURATION |
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PIN DESCRIPTION |
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PIN |
SYMBOL |
NAME AND FUNCTION |
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DIR |
1 |
20 |
VCC |
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NUMBER |
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A0 |
2 |
19 |
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1 |
DIR |
Direction control input |
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OE |
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A1 |
3 |
18 |
B0 |
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2, 3, 4, 5, |
A0 ± A7 |
Data inputs/outputs (A side) |
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A2 |
4 |
17 |
B1 |
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6, 7, 8, 9 |
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A3 |
5 |
16 |
B2 |
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18, 17, 16, |
B0 ± B7 |
Data inputs/outputs (B side) |
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A4 |
6 |
15 |
B3 |
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15, 14, 13, |
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12, 11 |
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A5 |
7 |
14 |
B4 |
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19 |
OE |
Output enable input (active-Low) |
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A6 |
8 |
13 |
B5 |
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10 |
GND |
Ground (0V) |
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A7 |
9 |
12 |
B6 |
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20 |
VCC |
Positive supply voltage |
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GND |
10 |
11 |
B7 |
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SA00121 |
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1998 Jan 16 |
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853-1447 18867 |
Philips Semiconductors |
Product specification |
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Octal transceiver with direction pin (3-State) |
74ABT245 |
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LOGIC SYMBOL |
LOGIC SYMBOL (IEEE/IEC) |
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1 |
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DIR |
19 |
19 |
G3 |
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OE |
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2 |
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3 EN1 (BA) |
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A0 |
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18 |
1 |
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3 EN2 (AB) |
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B0 |
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A1 |
3 |
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17 |
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B1 |
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1 |
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A2 |
4 |
2 |
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18 |
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16 |
2 |
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B2 |
3 |
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17 |
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A3 |
5 |
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15 |
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4 |
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16 |
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B3 |
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A4 |
6 |
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14 |
5 |
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15 |
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B4 |
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A5 |
7 |
6 |
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14 |
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13 |
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B5 |
7 |
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13 |
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A6 |
8 |
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12 |
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8 |
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12 |
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B6 |
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A7 |
9 |
9 |
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11 |
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11 |
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B7 |
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SA00122 |
SA00123 |
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FUNCTION TABLE |
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INPUTS |
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INPUTS/OUTPUTS |
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DIR |
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An |
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Bn |
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OE |
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L |
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L |
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An = Bn |
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Inputs |
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L |
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H |
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Inputs |
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Bn = An |
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H |
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X |
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Z |
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Z |
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H |
= High voltage level |
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L |
= Low voltage level |
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X |
= Don't care |
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Z |
= High impedance ºoffº state |
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ABSOLUTE MAXIMUM RATINGS1, 2 |
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SYMBOL |
PARAMETER |
CONDITIONS |
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RATING |
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UNIT |
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VCC |
DC supply voltage |
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±0.5 to +7.0 |
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IIK |
DC input diode current |
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VI < 0 |
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±18 |
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mA |
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V |
DC input voltage3 |
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±1.2 to +7.0 |
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V |
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I |
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IOK |
DC output diode current |
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VO < 0 |
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±50 |
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mA |
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V |
DC output voltage3 |
output in Off or High state |
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±0.5 to +5.5 |
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V |
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OUT |
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IOUT |
DC output current |
output in Low state |
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128 |
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mA |
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Tstg |
Storage temperature range |
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±65 to 150 |
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°C |
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NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16 |
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