Motorola 4N28, 4N27, 4N26, 4N25A, 4N25 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N25/D

GlobalOptoisolator

6-Pin DIP Optoisolators

Transistor Output

The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

•Most Economical Optoisolator Choice for Medium Speed, Switching Applications

•Meets or Exceeds All JEDEC Registered Specifications

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ºVº must be included at end of part number. VDE 0884 is a test option.

Applications

•General Purpose Switching Circuits

•Interfacing and coupling systems of different potentials and impedances

•I/O Interfacing

•Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
INPUT LED
Reverse Voltage	VR	3	Volts
Forward Current Ð Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C	PD	120	mW
with Negligible Power in Output Detector
Derate above 25°C		1.41	mW/°C
OUTPUT TRANSISTOR
Collector±Emitter Voltage	VCEO	30	Volts
Emitter±Collector Voltage	VECO	7	Volts
Collector±Base Voltage	VCBO	70	Volts
Collector Current Ð Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Input LED
Derate above 25°C		1.76	mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Ambient Operating Temperature Range(2)	T	± 55 to +100	°C
	A
Storage Temperature Range(2)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

1.Isolation surge voltage is an internal device dielectric breakdown rating.

1.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

4N25* 4N25A*

4N26*

[CTR = 20% Min]

4N27

4N28

[CTR = 10% Min]

*Motorola Preferred Devices

STYLE 1 PLASTIC

6

1

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1	6
2	5
3	4

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

REV 5

Motorola, Inc. 1995

4N25

4N25A

4N26

4N27

4N28

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)(1)

A

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

Forward Voltage (I = 10 mA)

T = 25°C

VF

Ð

1.15

1.5

Volts

F

A

TA = ±55°C

Ð

1.3

Ð

TA = 100°C

Ð

1.05

Ð

Reverse Leakage Current (VR = 3 V)

IR

Ð

Ð

100

μA

Capacitance (V = 0 V, f = 1 MHz)

CJ

Ð

18

Ð

pF

OUTPUT TRANSISTOR

Collector±Emitter Dark Current

4N25,25A,26,27

ICEO

Ð

1

50

nA

(VCE = 10 V, TA = 25°C

4N28

Ð

1

100

(VCE = 10 V, TA = 100°C)

All Devices

ICEO

Ð

1

Ð

μA

Collector±Base Dark Current (VCB = 10 V)

ICBO

Ð

0.2

Ð

nA

Collector±Emitter Breakdown Voltage (IC = 1 mA)

V(BR)CEO

30

45

Ð

Volts

Collector±Base Breakdown Voltage (IC = 100 μA)

V(BR)CBO

70

100

Ð

Volts

Emitter±Collector Breakdown Voltage (IE = 100 μA)

V(BR)ECO

7

7.8

Ð

Volts

DC Current Gain (IC = 2 mA, VCE = 5 V)

hFE

Ð

500

Ð

Ð

Collector±Emitter Capacitance (f = 1 MHz, VCE = 0)

CCE

Ð

7

Ð

pF

Collector±Base Capacitance (f = 1 MHz, VCB = 0)

CCB

Ð

19

Ð

pF

Emitter±Base Capacitance (f = 1 MHz, VEB = 0)

CEB

Ð

9

Ð

pF

COUPLED

Output Collector Current (IF = 10 mA, VCE = 10 V)

4N25,25A,26

IC (CTR)(2)

2 (20)

7 (70)

Ð

mA (%)

4N27,28

1 (10)

5 (50)

Ð

Collector±Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)

VCE(sat)

Ð

0.15

0.5

Volts

Turn±On Time (I

= 10 mA, V

= 10 V, R

= 100 Ω)(3)

t

Ð

2.8

Ð

μs

F

CC

L

on

Turn±Off Time (I

= 10 mA, V

= 10 V, R

= 100 Ω)(3)

t

Ð

4.5

Ð

μs

F

CC

L

off

Rise Time (I = 10 mA, V

= 10 V, R

L

= 100 Ω)(3)

t

Ð

1.2

Ð

μs

F

CC

r

Fall Time (I

= 10 mA, V

= 10 V, R

= 100 Ω)(3)

t

Ð

1.3

Ð

μs

F

CC

L

f

Isolation Voltage (f = 60 Hz, t = 1 sec)(4)

VISO

7500

Ð

Ð

Vac(pk)

Isolation Resistance (V = 500 V)(4)

RISO

1011

Ð

Ð

Ω

Isolation Capacitance (V = 0 V, f = 1 MHz)(4)

CISO

Ð

0.2

Ð

pF

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For test circuit setup and waveforms, refer to Figure 11.

4.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2	Motorola Optoelectronics Device Data