Motorola 4N33, 4N32, 4N31, 4N30, 4N29A Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N29/D

GlobalOptoisolator

6-Pin DIP Optoisolators

Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.

This series is designed for use in applications requiring high collector output currents at lower input currents.

•Higher Sensitivity to Low Input Drive Current

•Meets or Exceeds All JEDEC Registered Specifications

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ªVº must be included at end of part number. VDE 0884 is a test option.

Applications

•Low Power Logic Circuits

•Interfacing and coupling systems of different potentials and impedances

•Telecommunications Equipment

•Portable Electronics

•Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
INPUT LED
Reverse Voltage	VR	3	Volts
Forward Current Ð Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C	PD	120	mW
Derate above 25°C		1.41	mW/°C
OUTPUT DETECTOR
Collector±Emitter Voltage	VCEO	30	Volts
Emitter±Collector Voltage	VECO	5	Volts
Collector±Base Voltage	VCBO	30	Volts
Collector Current Ð Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
Derate above 25°C		1.76	mW/°C
TOTAL DEVICE
Isolation Surge Voltage(2)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Ambient Operating Temperature Range(3)	T	± 55 to +100	°C
	A
Storage Temperature Range(3)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

4N29

4N29A

4N30*

[CTR = 100% Min]

4N31

[CTR = 50% Min]

4N32*

4N33 *

[CTR = 500% Min]

*Motorola Preferred Devices

STYLE 1 PLASTIC

6

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1	6
2	5
3	4

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

1.Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6±Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30.

2.Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

3.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

REV 4

Motorola, Inc. 1995

4N29

4N29A

4N30

4N31

4N32

4N33

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)(1)

A

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

*Reverse Leakage Current (VR = 3 V, RL = 1 M ohms)

IR

Ð

0.05

100

μA

*Forward Voltage (IF = 10 mA)

VF

Ð

1.34

1.5

Volts

Capacitance (VR = 0 V, f = 1 MHz)

C

Ð

1.8

Ð

pF

OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted)

*Collector±Emitter Dark Current

ICEO

Ð

Ð

100

nA

(VCE = 10 V, Base Open)

*Collector±Base Breakdown Voltage

V(BR)CBO

30

Ð

Ð

Volts

(IC = 100 μA, IE = 0)

*Collector±Emitter Breakdown Voltage

V(BR)CEO

30

Ð

Ð

Volts

(IC = 100 μA, IB = 0)

*Emitter±Collector Breakdown Voltage

V(BR)ECO

5

Ð

Ð

Volts

(IE = 100 μA, IB = 0)

DC Current Gain

hFE

Ð

16K

Ð

Ð

(VCE = 5 V, IC = 500 μA)

COUPLED (TA = 25°C unless otherwise noted)

*Collector Output Current (3)

4N32, 4N33

IC (CTR)(2)

50 (500)

Ð

Ð

mA (%)

(VCE = 10 V, IF = 10 mA)

4N29, 4N30

10 (100)

Ð

Ð

4N31

5 (50)

Ð

Ð

Isolation Surge Voltage(4,5)

4N29/A, 4N30, 31, 32, 33

V

7500

Ð

Ð

Vac(pk)

(60 Hz ac Peak, 1 Second)

*4N29, 4N32

ISO

2500

Ð

Ð

*4N30, 4N31, 4N33

1500

Ð

Ð

Isolation Resistance(4)

RISO

Ð

1011

Ð

Ohms

(V = 500 V)

*Collector±Emitter Saturation Voltage(3)

4N31

VCE(sat)

Ð

Ð

1.2

Volts

(IC = 2 mA, IF = 8 mA)

4N29, 4N30, 4N32, 4N33

Ð

Ð

1

Isolation Capacitance(4)

CISO

Ð

0.2

Ð

pF

(V = 0 V, f = 1 MHz)

Turn±On Time(6)

t

Ð

0.6

5

μs

(IC = 50 mA, IF = 200 mA, VCC = 10 V)

on

Turn±Off Time(6)

t

μs

(IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31

off

Ð

17

40

4N32, 33

Ð

45

100

*Indicates JEDEC Registered Data. All Motorola 6±pin devices have VISO rating of 7500 Vac(pk).

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.Pulse Test: Pulse Width = 300 μs, Duty Cycle p 2%.

4.For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.

5.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.

6.For test circuit setup and waveforms, refer to Figure 11.

2	Motorola Optoelectronics Device Data