Philips BYW95C-40, BYW95C-24, BYW95C-20, BYW95B-33, BYW95B-30 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D118

BYW95 series

Fast soft-recovery

controlled avalanche rectifiers

Product specification			1996 Jun 07
Supersedes data of December 1979

Philips Semiconductors	Product specification

Fast soft-recovery

BYW95 series

controlled avalanche rectifiers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack

∙Also available with preformed leads for easy insertion.

	DESCRIPTION	construction. This package is
	Rugged glass SOD64 package,	hermetically sealed and fatigue free
		as coefficients of expansion of all
	using a high temperature alloyed
		used parts are matched.
	k	a
		MAM104

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	BYW95A		−	200	V
	BYW95B		−	400	V
	BYW95C		−	600	V
VR	continuous reverse voltage
	BYW95A		−	200	V
	BYW95B		−	400	V
	BYW95C		−	600	V
IF(AV)	average forward current	Ttp = 60 °C; lead length = 10 mm	−	3.00	A
		see Fig.2;
		averaged over any 20 ms period;
		see also Fig.6
		Tamb = 65 °C; PCB mounting (see	−	1.25	A
		Fig.11); see Fig.3;
		averaged over any 20 ms period;
		see also Fig.6
IFRM	repetitive peak forward current	Ttp = 60 °C; see Fig.4	−	30	A
		Tamb = 65 °C; see Fig.5	−	13	A
IFSM	non-repetitive peak forward current	t = 10 ms half sine wave;	−	70	A
		Tj = Tj max prior to surge;
		VR = VRRMmax
ERSM	non-repetitive peak reverse	L = 120 mH; Tj = Tj max prior to	−	10	mJ
	avalanche energy	surge; inductive load switched off
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Fig.7	−65	+175	°C

1996 Jun 07

2

Philips Semiconductors	Product specification

Fast soft-recovery

BYW95 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL				PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF				forward voltage	IF = 5 A; Tj = Tj max; see Fig.8	-	-	1.25	V
					IF = 5 A; see Fig.8	-	-	1.50	V
V(BR)R				reverse avalanche	IR = 0.1 mA
				breakdown voltage
				BYW95A		300	-	-	V
				BYW95B		500	-	-	V
				BYW95C		700	-	-	V
IR				reverse current	VR = VRRMmax;	-	-	1	mA
					see Fig.9
					VR = VRRMmax; Tj = 165 °C;	-	-	150	mA
					see Fig.9
trr				reverse recovery time	when switched from IF = 0.5 A	-	-	250	ns
					to IR = 1 A; measured at
					IR = 0.25 A; see Fig.12
Cd				diode capacitance	f = 1 MHz; VR = 0 V; see Fig.10	-	85	-	pF
	dIR			maximum slope of	when switched from IF = 1 A to	-	-	7	A/ms
	--------			reverse recovery current	VR ³ 30 V and dIF/dt = -1 A/ms;
	dt				see Fig.13
THERMAL CHARACTERISTICS
SYMBOL				PARAMETER		CONDITIONS		VALUE	UNIT
Rth j-tp				thermal resistance from junction to tie-point		lead length = 10 mm		25	K/W
Rth j-a				thermal resistance from junction to ambient		note 1		75	K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.11. For more information please refer to the “General Part of associated Handbook”.

1996 Jun 07

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