Philips BZD27-C68, BZD27-C62, BZD27-C5V6, BZD27-C5V1, BZD27-C56 Datasheet

DISCRETE SEMICONDUCTORS

k, halfpage

M3D121

BZD27 series

Voltage regulator diodes

Product specification

1996 Jun 10

Supersedes data of October 1991

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification
Voltage regulator diodes	BZD27 series

FEATURES

·Glass passivated

·High maximum operating temperature

·Low leakage current

·Excellent stability

·Zener working voltage range: 3.6 to 270 V for 46 types

·Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types

·Supplied in 8 mm embossed tape.

DESCRIPTION

hermetically sealed and fatigue free

Cavity free cylindrical glass SOD87

as coefficients of expansion of all

used parts are matched.

package through Implotecä(1)

technology. This package is

(1) Implotec is a trademark of Philips.

handbook, 4 columns

k

a

MAM249

Fig.1 Simplified outline (SOD87) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Ptot	total power dissipation	Ttp = 105 °C; see Figs 2 and 3
	BZD27-C3V6 to -C6V8		-	1.7	W
	BZD27-C7V5 to -C510		-	2.3	W
Ptot	total power dissipation	PCB mounted (see Fig.7)
	BZD27-C3V6 to -C6V8	Tamb = 60 °C; see Fig.2	-	0.8	W
	BZD27-C7V5 to -C510	Tamb = 55 °C; see Fig.3	-	0.8	W
PZSM	non-repetitive peak reverse	tp = 100 ms; square pulse;
	power dissipation	Tj = 25 °C prior to surge; see Figs.4 and 5
	BZD27-C3V6 to -C6V8		-	300	W
	BZD27-C7V5 to -C510		-	300	W
PRSM	non-repetitive peak reverse	10/1000 ms exponential pulse (see Fig.8);
	power dissipation	Tj = 25 °C prior to surge
	BZD27-C7V5 to -C510		-	150	W
Tstg	storage temperature
	BZD27-C3V6 to -C6V8		-65	+200	°C
	BZD27-C7V5 to -C510		-65	+175	°C
Tj	junction temperature
	BZD27-C3V6 to -C6V8		-65	+200	°C
	BZD27-C7V5 to -C510		-65	+175	°C

1996 Jun 10

2

Philips Semiconductors					Product specification
Voltage regulator diodes					BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL		PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VF		forward voltage	IF = 0.2 A; see Fig.6	−	1.2	V

Per type when used as voltage regulator diodes

Tj = 25 °C unless otherwise specified.

	TYPE	WORKING VOLTAGE					DIFFERENTIAL		TEMPERATURE		TEST	REVERSE CURRENT
							RESISTANCE		COEFFICIENT		CURRENT	at REVERSE VOLTAGE
	No.
	SUFFIX		VZ (V) at IZ				rdif (Ω) at IZ		SZ (%/K) at IZ		IZ (mA)	IR (μA)	VR (V)
	(1)
		MIN.		NOM.		MAX.	TYP.	MAX.	MIN.	MAX.		MAX.
	C3V6	3.4		3.6		3.8	4	8	−0.14	−0.04	100	100	1
	C3V9	3.7		3.9		4.1	4	8	−0.14	−0.04	100	50	1
	C4V3	4.0		4.3		4.6	4	7	−0.12	−0.02	100	25	1
	C4V7	4.4		4.7		5.0	3	7	−0.10	0.00	100	10	1
	C5V1	4.8		5.1		5.4	3	6	−0.08	−0.02	100	5	1
	C5V6	5.2		5.6		6.0	2	4	−0.04	0.04	100	10	2
	C6V2	5.8		6.2		6.6	2	3	−0.01	0.06	100	5	2
	C6V8	6.4		6.8		7.2	1	3	0.00	0.07	100	10	3
	C7V5	7.0		7.5		7.9	1	2	0.00	0.07	100	50	3
	C8V2	7.7		8.2		8.7	1	2	0.03	0.08	100	10	3
	C9V1	8.5		9.1		9.6	2	4	0.03	0.08	50	10	5
	C10	9.4		10		10.6	2	4	0.05	0.09	50	7	7.5
	C11	10.4		11		11.6	4	7	0.05	0.10	50	4	8.2
	C12	11.4		12		12.7	4	7	0.05	0.10	50	3	9.1
	C13	12.4		13		14.1	5	10	0.05	0.10	50	2	10
	C15	13.8		15		15.6	5	10	0.05	0.10	50	1	11
	C16	15.3		16		17.1	6	15	0.06	0.11	25	1	12
	C18	16.8		18		19.1	6	15	0.06	0.11	25	1	13
	C20	18.8		20		21.2	6	15	0.06	0.11	25	1	15
	C22	20.8		22		23.3	6	15	0.06	0.11	25	1	16
	C24	22.8		24		25.6	7	15	0.06	0.11	25	1	18
	C27	25.1		27		28.9	7	15	0.06	0.11	25	1	20
	C30	28		30		32	8	15	0.06	0.11	25	1	22
	C33	31		33		35	8	15	0.06	0.11	25	1	24
	C36	34		36		38	21	40	0.06	0.11	10	1	27
	C39	37		39		41	21	40	0.06	0.11	10	1	30
	C43	40		43		46	24	45	0.07	0.12	10	1	33
	C47	44		47		50	24	45	0.07	0.12	10	1	36

1996 Jun 10

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