Philips BZV55-F4V3, BZV55-F47, BZV55-F43, BZV55-F3V9, BZV55-F3V6 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
BZV55 series
Voltage regulator diodes
Product specification |
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1999 May 21 |
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Supersedes data of 1996 Apr 26 |
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Philips Semiconductors |
Product specification |
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Voltage regulator diodes |
BZV55 series |
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FEATURES
∙Total power dissipation: max. 500 mW
∙Two tolerance series: ±2% and approx. ±5%
∙Working voltage range: nom. 2.4 to 75 V (E24 range)
∙Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
∙Low-power voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 ±2% (BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.
handbook, 4 columns |
k |
a |
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MAM215
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IF |
continuous forward current |
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250 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Tables |
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Tj = 25 °C prior to surge |
1 and 2 |
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Ptot |
total power dissipation |
Tamb ≤50 °C; note 1 |
− |
400 |
mW |
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tie-point ≤50 °C; note 1 |
− |
500 |
mW |
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PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
− |
40 |
W |
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dissipation |
Tj = 25 °C prior to surge; see Fig.3 |
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Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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−65 |
+200 |
°C |
Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
1999 May 21 |
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Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
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BZV55 series |
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ELECTRICAL CHARACTERISTICS |
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Total BZV55-B and C series |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
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UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.4 |
0.9 |
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V |
IR |
reverse current |
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BZV55-B/C2V4 |
VR = 1 V |
50 |
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μA |
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BZV55-B/C2V7 |
VR = 1 V |
20 |
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μA |
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BZV55-B/C3V0 |
VR = 1 V |
10 |
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μA |
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BZV55-B/C3V3 |
VR = 1 V |
5 |
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μA |
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BZV55-B/C3V6 |
VR = 1 V |
5 |
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μA |
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BZV55-B/C3V9 |
VR = 1 V |
3 |
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μA |
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BZV55-B/C4V3 |
VR = 1 V |
3 |
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μA |
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BZV55-B/C4V7 |
VR = 2 V |
3 |
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μA |
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BZV55-B/C5V1 |
VR = 2 V |
2 |
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μA |
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BZV55-B/C5V6 |
VR = 2 V |
1 |
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μA |
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BZV55-B/C6V2 |
VR = 4 V |
3 |
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μA |
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BZV55-B/C6V8 |
VR = 4 V |
2 |
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μA |
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BZV55-B/C7V5 |
VR = 5 V |
1 |
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μA |
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BZV55-B/C8V2 |
VR = 5 V |
700 |
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nA |
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BZV55-B/C9V1 |
VR = 6 V |
500 |
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nA |
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BZV55-B/C10 |
VR = 7 V |
200 |
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nA |
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BZV55-B/C11 |
VR = 8 V |
100 |
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nA |
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BZV55-B/C12 |
VR = 8 V |
100 |
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nA |
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BZV55-B/C13 |
VR = 8 V |
100 |
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nA |
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BZV55-B/C15 to 75 |
VR = 0.7VZnom |
50 |
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nA |
1999 May 21 |
3 |
21 May 1999
4
Table 1 Per type BZV55-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
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WORKING VOLTAGE |
DIFFERENTIAL RESISTANCE |
TEMP. COEFF. |
DIODE CAP. |
NON-REPETITIVE |
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VZ (V) |
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rdif (Ω) |
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SZ (mV/K) |
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Cd (pF) |
PEAK REVERSE |
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BZV55-B |
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at IZtest = 5 mA |
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at IZtest = 5 mA |
at f = 1 MHz; |
CURRENT |
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or C |
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Tol. approx. |
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at |
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(see Figs 5 and 6) |
VR = 0 V |
IZSM (A) |
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XXX |
Tol. ±2% (B) |
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at tp = 100 μs; |
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±5% (C) |
IZtest = 1 mA |
IZtest = 5 mA |
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Tamb = 25 °C |
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MIN. |
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MAX. |
MIN. |
MAX. |
TYP. |
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MAX. |
TYP. |
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MAX. |
MIN. |
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TYP. |
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MAX. |
MAX. |
MAX. |
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2V4 |
2.35 |
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2.45 |
2.2 |
2.6 |
275 |
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600 |
70 |
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100 |
−3.5 |
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−1.6 |
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0 |
450 |
6.0 |
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2V7 |
2.65 |
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2.75 |
2.5 |
2.9 |
300 |
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600 |
75 |
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100 |
−3.5 |
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−2.0 |
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0 |
450 |
6.0 |
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3V0 |
2.94 |
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3.06 |
2.8 |
3.2 |
325 |
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600 |
80 |
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95 |
−3.5 |
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−2.1 |
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0 |
450 |
6.0 |
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3V3 |
3.23 |
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3.37 |
3.1 |
3.5 |
350 |
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600 |
85 |
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95 |
−3.5 |
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−2.4 |
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0 |
450 |
6.0 |
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3V6 |
3.53 |
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3.67 |
3.4 |
3.8 |
375 |
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600 |
85 |
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90 |
−3.5 |
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−2.4 |
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0 |
450 |
6.0 |
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3V9 |
3.82 |
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3.98 |
3.7 |
4.1 |
400 |
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600 |
85 |
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90 |
−3.5 |
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−2.5 |
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0 |
450 |
6.0 |
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4V3 |
4.21 |
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4.39 |
4.0 |
4.6 |
410 |
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600 |
80 |
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90 |
−3.5 |
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−2.5 |
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0 |
450 |
6.0 |
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4V7 |
4.61 |
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4.79 |
4.4 |
5.0 |
425 |
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500 |
50 |
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80 |
−3.5 |
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−1.4 |
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0.2 |
300 |
6.0 |
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5V1 |
5.00 |
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5.20 |
4.8 |
5.4 |
400 |
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480 |
40 |
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60 |
−2.7 |
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−0.8 |
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1.2 |
300 |
6.0 |
5V6 |
5.49 |
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5.71 |
5.2 |
6.0 |
80 |
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400 |
15 |
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40 |
−2.0 |
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1.2 |
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2.5 |
300 |
6.0 |
6V2 |
6.08 |
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6.32 |
5.8 |
6.6 |
40 |
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150 |
6 |
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10 |
0.4 |
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2.3 |
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3.7 |
200 |
6.0 |
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6V8 |
6.66 |
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6.94 |
6.4 |
7.2 |
30 |
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80 |
6 |
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15 |
1.2 |
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3.0 |
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4.5 |
200 |
6.0 |
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7V5 |
7.35 |
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7.65 |
7.0 |
7.9 |
30 |
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80 |
6 |
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15 |
2.5 |
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4.0 |
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5.3 |
150 |
4.0 |
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8V2 |
8.04 |
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8.36 |
7.7 |
8.7 |
40 |
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80 |
6 |
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15 |
3.2 |
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4.6 |
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6.2 |
150 |
4.0 |
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9V1 |
8.92 |
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9.28 |
8.5 |
9.6 |
40 |
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100 |
6 |
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15 |
3.8 |
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5.5 |
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7.0 |
150 |
3.0 |
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10 |
9.80 |
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10.20 |
9.4 |
10.6 |
50 |
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150 |
8 |
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20 |
4.5 |
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6.4 |
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8.0 |
90 |
3.0 |
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11 |
10.80 |
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11.20 |
10.4 |
11.6 |
50 |
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150 |
10 |
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20 |
5.4 |
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7.4 |
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9.0 |
85 |
2.5 |
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12 |
11.80 |
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12.20 |
11.4 |
12.7 |
50 |
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150 |
10 |
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25 |
6.0 |
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8.4 |
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10.0 |
85 |
2.5 |
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13 |
12.70 |
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13.30 |
12.4 |
14.1 |
50 |
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170 |
10 |
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30 |
7.0 |
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9.4 |
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11.0 |
80 |
2.5 |
15 |
14.70 |
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15.30 |
13.8 |
15.6 |
50 |
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200 |
10 |
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30 |
9.2 |
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11.4 |
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13.0 |
75 |
2.0 |
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16 |
15.70 |
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16.30 |
15.3 |
17.1 |
50 |
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200 |
10 |
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40 |
10.4 |
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12.4 |
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14.0 |
75 |
1.5 |
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18 |
17.60 |
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18.40 |
16.8 |
19.1 |
50 |
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225 |
10 |
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45 |
12.4 |
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14.4 |
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16.0 |
70 |
1.5 |
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20 |
19.60 |
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20.40 |
18.8 |
21.2 |
60 |
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225 |
15 |
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55 |
14.4 |
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16.4 |
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18.0 |
60 |
1.5 |
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22 |
21.60 |
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22.40 |
20.8 |
23.3 |
60 |
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250 |
20 |
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55 |
16.4 |
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18.4 |
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20.0 |
60 |
1.25 |
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24 |
23.50 |
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24.50 |
22.8 |
25.6 |
60 |
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250 |
25 |
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70 |
18.4 |
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20.4 |
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22.0 |
55 |
1.25 |
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diodes regulator Voltage
series BZV55
Semiconductors Philips
specification Product
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