DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product specification |
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1999 May 11 |
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Supersedes data of 1996 Oct 28 |
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Philips Semiconductors |
Product specification |
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Voltage regulator diodes |
BZV49 series |
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FEATURES
∙Total power dissipation: max. 1 W
∙Tolerance series: approx. ±5%
∙Working voltage range: nom. 2.4 to 75 V (E24 range)
∙Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
∙ General regulation functions.
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89 plastic SMD package.
The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75).
PINNING
PIN |
DESCRIPTION |
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1 |
anode |
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2 |
anode |
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3 |
cathode |
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handbook, halfpage
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Bottom view |
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MAM244 |
Fig.1 Simplified outline (SOT89) and symbol.
MARKING
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
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BZV49-C2V4 |
2Y4 |
BZV49-C6V2 |
6Y2 |
BZV49-C16 |
16Y |
BZV49-C43 |
43Y |
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BZV49-C2V7 |
2Y7 |
BZV49-C6V8 |
6Y8 |
BZV49-C18 |
18Y |
BZV49-C47 |
47Y |
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BZV49-C3V0 |
3Y0 |
BZV49-C7V5 |
7Y5 |
BZV49-C20 |
20Y |
BZV49-C51 |
51Y |
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BZV49-C3Y3 |
3Y3 |
BZV49-C8V2 |
8Y2 |
BZV49-C22 |
22Y |
BZV49-C56 |
56Y |
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BZV49-C3V6 |
3Y6 |
BZV49-C9V1 |
9Y1 |
BZV49-C24 |
24Y |
BZV49-C62 |
62Y |
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BZV49-C3V9 |
3Y9 |
BZV49-C10 |
10Y |
BZV49-C27 |
27Y |
BZV49-C68 |
68Y |
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BZV49-C4V3 |
4Y3 |
BZV49-C11 |
11Y |
BZV49-C30 |
30Y |
BZV49-C75 |
75Y |
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BZV49-C4V7 |
4Y7 |
BZV49-C12 |
12Y |
BZV49-C33 |
33Y |
− |
− |
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BZV49-C5V1 |
5Y1 |
BZV49-C13 |
13Y |
BZV49-C36 |
36Y |
− |
− |
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BZV49-C5V6 |
5Y6 |
BZV49-C15 |
15Y |
BZV49-C39 |
39Y |
− |
− |
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1999 May 11 |
2 |
Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
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BZV49 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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IF |
continuous forward current |
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250 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Table |
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Tj = 25 °C prior to surge |
“Per type” |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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1 |
W |
PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
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40 |
W |
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dissipation |
Tj = 25 °C prior to surge; see Fig.2 |
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Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 50 mA; see Fig.3 |
1 |
V |
1999 May 11 |
3 |
11 May 1999
4
Per type
Tj = 25 °C unless otherwise specified.
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WORKING |
DIFFERENTIAL |
TEMP. COEFF. |
TEST |
DIODE CAP. |
REVERSE |
NON-REPETITIVE PEAK |
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VOLTAGE |
RESISTANCE |
SZ (mV/K) |
CURRENT |
Cd (pF) |
CURRENT at |
REVERSE CURRENT |
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BZV49- |
VZ (V) |
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rdif (Ω) |
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at IZtest |
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IZtest (mA) |
at f = 1 MHz; |
REVERSE |
IZSM (A) |
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at IZtest |
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at IZtest |
see Figs 4 and 5 |
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at VR = 0 V |
VOLTAGE |
at tp = 100 μs; |
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CXXX |
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Tamb = 25 °C |
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IR (μA) |
VR |
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MIN. |
MAX. |
TYP. |
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MAX. |
MIN. |
TYP. |
MAX. |
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MAX. |
MAX. |
(V) |
MAX. |
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2V4 |
2.2 |
2.6 |
70 |
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100 |
−3.5 |
−1.6 |
0 |
5 |
450 |
50 |
1.0 |
6.0 |
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2V7 |
2.5 |
2.9 |
75 |
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100 |
−3.5 |
−2.0 |
0 |
5 |
450 |
20 |
1.0 |
6.0 |
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3V0 |
2.8 |
3.2 |
80 |
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95 |
−3.5 |
−2.1 |
0 |
5 |
450 |
10 |
1.0 |
6.0 |
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3V3 |
3.1 |
3.5 |
85 |
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95 |
−3.5 |
−2.4 |
0 |
5 |
450 |
5 |
1.0 |
6.0 |
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3V6 |
3.4 |
3.8 |
85 |
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90 |
−3.5 |
−2.4 |
0 |
5 |
450 |
5 |
1.0 |
6.0 |
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3V9 |
3.7 |
4.1 |
85 |
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90 |
−3.5 |
−2.5 |
0 |
5 |
450 |
3 |
1.0 |
6.0 |
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4V3 |
4.0 |
4.6 |
80 |
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90 |
−3.5 |
−2.5 |
0 |
5 |
450 |
3 |
1.0 |
6.0 |
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4V7 |
4.4 |
5.0 |
50 |
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80 |
−3.5 |
−1.4 |
+0.2 |
5 |
300 |
3 |
2.0 |
6.0 |
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5V1 |
4.8 |
5.4 |
40 |
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60 |
−2.7 |
−0.8 |
+1.2 |
5 |
300 |
2 |
2.0 |
6.0 |
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5V6 |
5.2 |
6.0 |
15 |
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40 |
−2.0 |
+1.2 |
+2.5 |
5 |
300 |
1 |
2.0 |
6.0 |
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6V2 |
5.8 |
6.6 |
6 |
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10 |
0.4 |
2.3 |
3.7 |
5 |
200 |
3 |
4.0 |
6.0 |
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6V8 |
6.4 |
7.2 |
6 |
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15 |
1.2 |
3.0 |
4.5 |
5 |
200 |
2 |
4.0 |
6.0 |
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7V5 |
7.0 |
7.9 |
6 |
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15 |
2.5 |
4.0 |
5.3 |
5 |
150 |
1 |
5.0 |
4.0 |
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8V2 |
7.7 |
8.7 |
6 |
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15 |
3.2 |
4.6 |
6.2 |
5 |
150 |
0.7 |
5.0 |
4.0 |
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9V1 |
8.5 |
9.6 |
6 |
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15 |
3.8 |
5.5 |
7.0 |
5 |
150 |
0.5 |
6.0 |
3.0 |
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10 |
9.4 |
10.6 |
8 |
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20 |
4.5 |
6.4 |
8.0 |
5 |
90 |
0.2 |
7.0 |
3.0 |
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11 |
10.4 |
11.6 |
10 |
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20 |
5.4 |
7.4 |
9.0 |
5 |
85 |
0.1 |
8.0 |
2.5 |
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12 |
11.4 |
12.7 |
10 |
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25 |
6.0 |
8.4 |
10.0 |
5 |
85 |
0.1 |
8.0 |
2.5 |
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13 |
12.4 |
14.1 |
10 |
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30 |
7.0 |
9.4 |
11.0 |
5 |
80 |
0.1 |
8.0 |
2.5 |
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15 |
13.8 |
15.6 |
10 |
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30 |
9.2 |
11.4 |
13.0 |
5 |
75 |
0.05 |
10.5 |
2.0 |
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16 |
15.3 |
17.1 |
10 |
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40 |
10.4 |
12.4 |
14.0 |
5 |
75 |
0.05 |
11.2 |
1.5 |
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18 |
16.8 |
19.1 |
10 |
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45 |
12.4 |
14.4 |
16.0 |
5 |
70 |
0.05 |
12.6 |
1.5 |
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20 |
18.8 |
21.2 |
15 |
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55 |
14.4 |
16.4 |
18.0 |
5 |
60 |
0.05 |
14.0 |
1.5 |
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diodes regulator Voltage
series BZV49
Semiconductors Philips
specification Product