OKI MSM5117805B-70TS-L, MSM5117805B-70JS, MSM5117805B-50TS-L, MSM5117805B-50JS, MSM5117805B-70TS-K Datasheet

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Semiconductor	MSM5117805B

MSM5117805B

2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM5117805B is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117805B is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.

FEATURES

•2,097,152-word ´ 8-bit configuration

•Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

•Output : TTL compatible, 3-state

•Refresh : 2048 cycles/32 ms

•Fast page mode with EDO, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Multi-bit test mode capability

•Package options:

28-pin 400 mil plastic SOJ	(SOJ28-P-400-1.27)	(Product : MSM5117805B-xxJS)
28-pin 400 mil plastic TSOP	(TSOPII28-P-400-1.27-K)	(Product : MSM5117805B-xxTS-K)
	(TSOPII28-P-400-1.27-L)	(Product : MSM5117805B-xxTS-L)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MSM5117805B-50	50 ns	25 ns	13 ns	13 ns	90 ns	825 mW
	MSM5117805B-60	60 ns	30 ns	15 ns	15 ns	110 ns	715 mW	5.5 mW
	MSM5117805B-70	70 ns	35 ns	20 ns	20 ns	130 ns	605 mW

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MSM5117805B

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PIN CONFIGURATION (TOP VIEW)
VCC	1	28	VSS	VCC	1	28	VSS
DQ1	2	27	DQ8	DQ1	2	27	DQ8
DQ2	3	26	DQ7	DQ2	3	26	DQ7
DQ3	4	25	DQ6	DQ3	4	25	DQ6
DQ4	5	24	DQ5	DQ4	5	24	DQ5
WE 6		23	CAS	WE 6		23	CAS
RAS	7	22	OE	RAS	7	22	OE
NC	8	21	A9	NC	8	21	A9
A10R	9	20	A8	A10R	9	20	A8
A0	10	19	A7	A0	10	19	A7
A1	11	18	A6	A1	11	18	A6
A2	12	17	A5	A2	12	17	A5
A3	13	16	A4	A3	13	16	A4
VCC 14		15	VSS	VCC 14		15	VSS
	28-Pin Plastic SOJ				28-Pin Plastic TSOP
						(K Type)

VSS	28		1	VCC
DQ8	27		2	DQ1
DQ7	26		3	DQ2
DQ6	25		4	DQ3
DQ5	24		5	DQ4
CAS				WE
	23		6
OE				RAS
	22		7
A9				NC
	21		8
A8				A10R
	20		9
A7				A0
	19		10
A6				A1
	18		11
A5				A2
	17		12
A4				A3
	16		13
VSS	15		14	VCC

28-Pin Plastic TSOP

(L Type)

Pin Name	Function
A0 - A9, A10R	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DQ1 - DQ8	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5 V)
VSS	Ground (0 V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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¡ Semiconductor MSM5117805B

BLOCK DIAGRAM

	Timing				WE	OE
RAS
	Generator
						I/O		8	Output	8
CAS						Controller			Buffers
										DQ1 - DQ8
	10	Column			10	Column Decoders			Input
		Address						8		8
		Buffers							Buffers
		Internal			Sense Amplifiers 8		I/O	8
A0 - A9				Refresh			Selector
		Address
		Counter		Control Clock
	10	Row		Row		Memory
		Address	11
				Deco-	Word
A10R	1	Buffers				Cells
				ders	Drivers

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

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