MOTOROLA MC74VHC245ML2, MC74VHC245ML1, MC74VHC245DW, MC74VHC245DWR2, MC74VHC245M Datasheet

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MOTOROLA MC74VHC245ML2, MC74VHC245ML1, MC74VHC245DW, MC74VHC245DWR2, MC74VHC245M Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Octal Bus Transceiver

The MC74VHC245 is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

It is intended for two±way asynchronous communication between data buses. The direction of data transmission is determined by the level of the DIR input. The output enable pin (OE) can be used to disable the device, so that the buses are effectively isolated.

All inputs are equipped with protection circuits against static discharge.

High Speed: tPD = 4.0ns (Typ) at VCC = 5V

Low Power Dissipation: ICC = 4μA (Max) at TA = 25°C

High Noise Immunity: VNIH = VNIL = 28% VCC

Power Down Protection Provided on Inputs

Balanced Propagation Delays

Designed for 2V to 5.5V Operating Range

Low Noise: VOLP = 1.2V (Max)

Pin and Function Compatible with Other Standard Logic Families

Latchup Performance Exceeds 300mA

ESD Performance: HBM > 2000V; Machine Model > 200V

Chip Complexity: 308 FETs or 77 Equivalent Gates

APPLICATION NOTES

1.Do not force a signal on an I/O pin when it is an active output, damage may occur.

2.All floating (high impedence) input or I/O pins must be fixed by means of pull up or pull down resistors or bus terminator ICs.

3.A parasitic diode is formed between the bus and VCC terminals. Therefore, the VHC245 cannot be used to interface 5V to 3V systems directly.

LOGIC DIAGRAM

 

A1

2

18

B1

 

 

A2

3

17

B2

 

 

A3

4

16

B3

 

A A4

5

15

B4

B

DATA

A5

6

14

B5

DATA

PORT

PORT

 

7

13

 

 

A6

B6

 

 

A7

8

12

B7

 

 

A8

9

11

B8

 

 

DIR

1

 

 

 

 

OE

19

 

 

 

 

 

FUNCTION TABLE

Control Inputs

 

 

 

 

 

Operation

OE

DIR

 

 

 

 

 

L

L

 

Data Transmitted from Bus B to Bus A

 

 

 

 

L

H

 

Data Transmitted from Bus A to Bus B

 

 

 

 

H

X

 

Buses Isolated (High±Impedance State)

 

 

 

 

MC74VHC245

DW SUFFIX

20±LEAD SOIC PACKAGE

CASE 751D±04

DT SUFFIX

20±LEAD TSSOP PACKAGE

CASE 948E±02

M SUFFIX

20±LEAD SOIC EIAJ PACKAGE

CASE 967±01

ORDERING INFORMATION

MC74VHCXXXDW SOIC MC74VHCXXXDT TSSOP MC74VHCXXXM SOIC EIAJ

PIN ASSIGNMENT

DIR

1

20

 

VCC

 

 

 

 

 

 

A1

2

19

OE

A2

3

18

B1

A3

4

17

B2

A4

5

16

B3

A5

6

15

 

B4

A6

7

14

 

B5

A7

8

13

 

B6

A8

9

12

 

B7

GND

10

11

 

B8

 

 

 

 

 

 

6/97

Motorola, Inc. 1997

1

REV 1

MC74VHC245

MAXIMUM RATINGS*

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

VCC

DC Supply Voltage

 

± 0.5 to + 7.0

V

 

Vin

DC Input Voltage

 

± 0.5 to + 7.0

V

Vout

DC Output Voltage

 

± 0.5 to VCC + 0.5

V

IIK

Input Diode Current

 

± 20

mA

IOK

Output Diode Current

 

± 20

mA

Iout

DC Output Current, per Pin

 

± 25

mA

 

ICC

DC Supply Current, VCC and GND Pins

± 75

mA

PD

Power Dissipation in Still Air

SOIC Packages²

500

mW

 

 

TSSOP Package²

450

 

 

 

 

 

 

Tstg

Storage Temperature

 

± 65 to + 150

_C

*Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute±maximum±rated conditions is not implied.

²Derating Ð SOIC Packages: ± 7 mW/ _C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

 

VCC

DC Supply Voltage

 

2.0

5.5

V

Vin

DC Input Voltage

 

0

5.5

V

Vout

DC Output Voltage

 

0

VCC

V

TA

Operating Temperature

 

± 40

+ 85

_C

tr, tf

Input Rise and Fall Time

VCC = 3.3V ±0.3V

0

100

ns/V

 

 

VCC =5.0V ±0.5V

0

20

 

DC ELECTRICAL CHARACTERISTICS

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

 

 

 

 

VCC

 

TA = 25°C

 

TA = ± 40 to 85°C

 

 

 

Symbol

Parameter

Test Conditions

V

Min

Typ

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Minimum High±Level

 

2.0

1.50

 

 

1.50

 

V

 

 

 

Input Voltage

 

3.0 to

VCC x 0.7

 

 

VCC x 0.7

 

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level

 

2.0

 

 

0.50

 

0.50

V

 

 

 

Input Voltage

 

3.0 to

 

 

VCC x 0.3

 

VCC x 0.3

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Minimum High±Level

Vin = VIH or VIL

2.0

1.9

2.0

 

1.9

 

V

 

 

 

Output Voltage

IOH = ± 50μA

3.0

2.9

3.0

 

2.9

 

 

 

 

 

 

 

4.5

4.4

4.5

 

4.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH or VIL

 

 

 

 

 

 

 

 

 

 

 

IOH = ± 4mA

3.0

2.58

 

 

2.48

 

 

 

 

 

 

IOH = ± 8mA

4.5

3.94

 

 

3.80

 

 

 

 

VOL

Maximum Low±Level

Vin = VIH or VIL

2.0

 

0.0

0.1

 

0.1

V

 

 

 

Output Voltage

IOL = 50μA

3.0

 

0.0

0.1

 

0.1

 

 

 

 

 

 

4.5

 

0.0

0.1

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH or VIL

 

 

 

 

 

 

 

 

 

 

 

IOL = 4mA

3.0

 

 

0.36

 

0.44

 

 

 

 

 

IOL = 8mA

4.5

 

 

0.36

 

0.44

 

 

 

Iin

Maximum Input

Vin = 5.5 V or GND

0 to 5.5

 

 

± 0.1

 

± 1.0

μA

 

 

 

Leakage Current

(DIR, OE)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MOTOROLA

 

2

 

 

VHC Data ± Advanced CMOS Logic

 

 

 

 

 

 

 

 

 

DL203 Ð Rev 1

MC74VHC245

DC ELECTRICAL CHARACTERISTICS

 

 

 

VCC

 

TA = 25°C

 

TA = ± 40 to 85°C

 

Symbol

Parameter

Test Conditions

V

Min

Typ

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

IOZ

Maximum Three±State

Vin = VIL or VIH

5.5

 

 

± 0.25

 

± 2.5

μA

 

Leakage Current

Vout = VCC or GND

 

 

 

 

 

 

 

ICC

Maximum Quiescent

Vin = VCC or GND

5.5

 

 

4.0

 

40.0

μA

 

Supply Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)

 

 

 

 

 

 

TA = 25°C

 

 

TA = ± 40 to 85°C

 

Symbol

 

Parameter

Test Conditions

Min

Typ

Max

 

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLH,

 

Maximum Propagation Delay,

VCC = 3.3 ± 0.3V

CL = 15pF

 

5.8

8.4

 

1.0

10.0

 

ns

tPHL

 

A to B or B to A

 

CL = 50pF

 

8.3

11.9

 

1.0

13.5

 

 

 

 

 

VCC = 5.0 ± 0.5V

CL = 15pF

 

4.0

5.5

 

1.0

6.5

 

 

 

 

 

 

CL = 50pF

 

5.5

7.5

 

1.0

8.5

 

 

tPZL,

 

Output Enable Time

VCC = 3.3 ± 0.3V

CL = 15pF

 

8.5

13.2

 

1.0

15.5

 

ns

tPZH

 

OE to A or B

RL = 1 kΩ

CL = 50pF

 

11.0

16.7

 

1.0

19.0

 

 

 

 

 

VCC = 5.0 ± 0.5V

CL = 15pF

 

5.8

8.5

 

1.0

10.0

 

 

 

 

 

RL = 1 kΩ

CL = 50pF

 

7.3

10.6

 

1.0

12.0

 

 

tPLZ,

 

Output Disable Time

VCC = 3.3 ± 0.3V

CL = 50pF

 

11.5

15.8

 

1.0

18.0

 

ns

tPHZ

 

OE to A or B

RL = 1 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 5.0 ± 0.5V

CL = 50pF

 

7.0

9.7

 

1.0

11.0

 

 

 

 

 

RL = 1 kΩ

 

 

 

 

 

 

 

 

 

 

tOSLH,

 

Output to Output Skew

VCC = 3.3 ± 0.3V

CL = 50pF

 

 

 

1.5

 

 

1.5

 

pF

tOSHL

 

 

(Note 1.)

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 5.0 ± 0.5V

CL = 50pF

 

 

 

1.0

 

 

1.0

 

ns

 

 

 

(Note 1.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cin

 

Maximum Input Capacitance

 

 

 

4

10

 

 

10

 

pF

 

 

DIR, OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CI/O

 

Maximum Three±State

 

 

 

8

 

 

 

 

 

pF

 

 

I/O Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical @ 25°C, VCC = 5.0V

 

 

CPD

 

Power Dissipation Capacitance (Note 2.)

 

 

 

 

 

21

 

 

pF

1.Parameter guaranteed by design. tOSLH = |tPLHm ± tPLHn|, tOSHL = |tPHLm ± tPHLn|.

2.CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per bit). CPD is used to determine the no±load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.

NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)

 

 

TA = 25°C

 

Symbol

Parameter

Typ

Max

Unit

 

 

 

 

 

VOLP

Quiet Output Maximum Dynamic VOL

0.9

1.2

V

VOLV

Quiet Output Minimum Dynamic VOL

±0.9

±1.2

V

VIHD

Minimum High Level Dynamic Input Voltage

 

3.5

V

VILD

Maximum Low Level Dynamic Input Voltage

 

1.5

V

VHC Data ± Advanced CMOS Logic

3

MOTOROLA

DL203 Ð Rev 1

 

 

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