MOTOROLA MC74VHC374ML1, MC74VHC374DWR2, MC74VHC374M, MC74VHC374MEL, MC74VHC374DTR2 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Octal D-Type Flip-Flop with 3-State Output

The MC74VHC374 is an advanced high speed CMOS octal flip±flip with 3±state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

This 8±bit D±type flip±flop is controlled by a clock input and an output enable input. When the output enable input is high, the eight outputs are in a high impedance state.

The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.

•High Speed: fmax = 185MHz (Typ) at VCC = 5V

•Low Power Dissipation: ICC = 4μA (Max) at TA = 25°C

•High Noise Immunity: VNIH = VNIL = 28% VCC

•Power Down Protection Provided on Inputs

•Balanced Propagation Delays

•Designed for 2V to 5.5V Operating Range

•Low Noise: VOLP = 0.9V (Max)

•Pin and Function Compatible with Other Standard Logic Families

•Latchup Performance Exceeds 300mA

•ESD Performance: HBM > 2000V; Machine Model > 200V

•Chip Complexity: 266 FETs or 66.5 Equivalent Gates

LOGIC DIAGRAM

			D0		3			2	Q0
					4			5
			D1						Q1
					7			6
			D2						Q2
DATA					8			9
			D3						Q3	NONINVERTING
INPUTS					13			12
			D4						Q4	OUTPUTS
					14			15
			D5						Q5
					17			16
			D6						Q6
					18			19
			D7
									Q7
					11
			CP
					1
			OE

FUNCTION TABLE

			INPUTS						OUTPUT
	OE		CP					D	Q
	L							H	H
	L							L	L
	L		L, H,					X	No Change
	H			X				X	Z

MC74VHC374

DW SUFFIX

20±LEAD SOIC PACKAGE

CASE 751D±04

DT SUFFIX

20±LEAD TSSOP PACKAGE

CASE 948E±02

M SUFFIX

20±LEAD SOIC EIAJ PACKAGE

CASE 967±01

ORDERING INFORMATION

MC74VHCXXXDW SOIC MC74VHCXXXDT TSSOP MC74VHCXXXM SOIC EIAJ

PIN ASSIGNMENT

			1	20	VCC
	OE
	Q0		2	19	Q7
	D0		3	18	D7
	D1		4	17	D6
	Q1		5	16	Q6
	Q2		6	15	Q5
	D2		7	14	D5
	D3		8	13	D4
	Q3		9	12	Q4
GND			10	11	CP

6/97

Motorola, Inc. 1997

1

REV 1

MC74VHC374

MAXIMUM RATINGS*

Symbol	Parameter		Value	Unit
VCC	DC Supply Voltage		± 0.5 to + 7.0	V
Vin	DC Input Voltage		± 0.5 to + 7.0	V
Vout	DC Output Voltage		± 0.5 to VCC + 0.5	V
IIK	Input Diode Current		± 20	mA
IOK	Output Diode Current		± 20	mA
Iout	DC Output Current, per Pin		± 25	mA
ICC	DC Supply Current, VCC and GND Pins		± 75	mA
PD	Power Dissipation in Still Air,	SOIC Packages²	500	mW
		TSSOP Package²	450
Tstg	Storage Temperature		± 65 to + 150	_C

*Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute±maximum±rated conditions is not implied.

²Derating Ð SOIC Packages: ± 7 mW/ _C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter		Min	Max	Unit
VCC	DC Supply Voltage		2.0	5.5	V
Vin	DC Input Voltage		0	5.5	V
Vout	DC Output Voltage		0	VCC	V
TA	Operating Temperature		± 40	+ 85	_C
tr, tf	Input Rise and Fall Time	VCC = 3.3V	0	100	ns/V
		VCC = 5.0V	0	20

DC ELECTRICAL CHARACTERISTICS

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

			VCC		TA = 25°C		TA = ± 40 to 85°C
Symbol	Parameter	Test Conditions	V	Min	Typ	Max	Min	Max	Unit
VIH	Minimum High±Level		2.0	1.50			1.50		V
	Input Voltage		3.0 to	VCC x 0.7			VCC x 0.7
			5.5
VIL	Maximum Low±Level		2.0			0.50		0.50	V
	Input Voltage		3.0 to			VCC x 0.3		VCC x 0.3
			5.5
VOH	Minimum High±Level	Vin = VIH or VIL	2.0	1.9	2.0		1.9		V
	Output Voltage	IOH = ± 50μA	3.0	2.9	3.0		2.9
			4.5	4.4	4.5		4.4
		Vin = VIH or VIL
		IOH = ± 4mA	3.0	2.58			2.48
		IOH = ± 8mA	4.5	3.94			3.80
VOL	Maximum Low±Level	Vin = VIH or VIL	2.0		0.0	0.1		0.1	V
	Output Voltage	IOL = 50μA	3.0		0.0	0.1		0.1
			4.5		0.0	0.1		0.1
		Vin = VIH or VIL
		IOL = 4mA	3.0			0.36		0.44
		IOL = 8mA	4.5			0.36		0.44

MOTOROLA	2	VHC Data ± Advanced CMOS Logic
		DL203 Ð Rev 1

MC74VHC374

DC ELECTRICAL CHARACTERISTICS

			VCC		TA = 25°C		TA = ± 40 to 85°C
Symbol	Parameter	Test Conditions	V	Min	Typ	Max	Min	Max	Unit
Iin	Maximum Input	Vin = 5.5V or GND	0 to 5.5			± 0.1		± 1.0	μA
	Leakage Current
IOZ	Maximum Three±State	Vin = VIL or VIH	5.5			± 0.25		± 2.5	μA
	Leakage Current	Vout = VCC or GND
ICC	Maximum Quiescent	Vin = VCC or GND	5.5			4.0		40.0	μA
	Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)

						TA = 25°C				TA = ± 40 to 85°C
Symbol		Parameter	Test Conditions		Min	Typ		Max		Min	Max		Unit
fmax		Maximum Clock Frequency	VCC = 3.3 ± 0.3V	CL = 15pF	80	130				70			ns
		(50% Duty Cycle)		CL = 50pF	55	85				50
			VCC = 5.0 ± 0.5V	CL = 15pF	130	185				110
				CL = 50pF	85	120				75
tPLH,		Maximum Propagation Delay,	VCC = 3.3 ± 0.3V	CL = 15pF		8.1		12.7		1.0	15.0		ns
tPHL		CP to Q		CL = 50pF		10.6		16.2		1.0	18.5
			VCC = 5.0 ± 0.5V	CL = 15pF		5.4		8.1		1.0	9.5
				CL = 50pF		6.9		10.1		1.0	11.5
tPZL,		Output Enable Time,	VCC = 3.3 ± 0.3V	CL = 15pF		7.1		11.0		1.0	13.0		ns
tPZH		OE to Q	RL = 1kΩ	CL = 50pF		9.6		14.5		1.0	16.5
			VCC = 5.0 ± 0.5V	CL = 15pF		5.1		7.6		1.0	9.0
			RL = 1kΩ	CL = 50pF		6.6		9.6		1.0	11.0
tPLZ,		Output Disable Time,	VCC = 3.3 ± 0.3V	CL = 50pF		10.2		14.0		1.0	16.0		ns
tPHZ		OE to Q	RL = 1kΩ
			VCC = 5.0 ± 0.5V	CL = 50pF		6.1		8.8		1.0	10.0
			RL = 1kΩ
tOSLH,		Output to Output Skew	VCC = 3.3 ± 0.3V	CL = 50pF				1.5			1.5		pF
tOSHL			(Note 1.)
			VCC = 5.0 ± 0.5V	CL = 50pF				1.0			1.0		pF
			(Note 1.)
Cin		Maximum Input Capacitance				4		10			10		pF
Cout		Maximum Three±State Output				6							pF
		Capacitance (Output in
		High±Impedance State)
							Typical @ 25°C, VCC = 5.0V
CPD		Power Dissipation Capacitance (Note 2.)							32				pF

1.Parameter guaranteed by design. tOSLH = |tPLHm ± tPLHn|, tOSHL = |tPHLm ± tPHLn|.

2.CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per flip±flop). CPD is used to determine the no±load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.

VHC Data ± Advanced CMOS Logic	3	MOTOROLA
DL203 Ð Rev 1