MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6071/D
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions
•Gate Triggering 4 Mode Ð 2N6071A,B, 2N6073A,B, 2N6075A,B
•Blocking Voltages to 600 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
2N6071A,B* 2N6073A,B* 2N6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2 |
G |
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MT2 |
G |
CASE 77-08 |
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(TO-225AA) |
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MT2 MT1 |
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STYLE 5 |
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Rating |
Symbol |
Value |
Unit |
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*Peak Repetitive Off-State Voltage(1) |
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VDRM |
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Volts |
(Gate Open, TJ = 25 to 110°C) |
2N6071A,B |
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200 |
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2N6073A,B |
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400 |
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2N6075A,B |
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600 |
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*On-State Current RMS (TC = 85°C) |
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IT(RMS) |
4 |
Amps |
*Peak Surge Current |
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ITSM |
30 |
Amps |
(One Full cycle, 60 Hz, TJ = ±40 to +110°C) |
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Circuit Fusing Considerations |
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I2t |
3.7 |
A2s |
(t = 8.3 ms) |
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*Peak Gate Power |
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PGM |
10 |
Watts |
*Average Gate Power |
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PG(AV) |
0.5 |
Watt |
*Peak Gate Voltage |
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VGM |
5 |
Volts |
*Indicates JEDEC Registered Data.
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data |
1 |
Motorola, Inc. 1998
2N6071A,B |
2N6073A,B |
2N6075A,B |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
Unit |
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*Operating Junction Temperature Range |
TJ |
±40 to +110 |
°C |
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*Storage Temperature Range |
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Tstg |
±40 to +150 |
°C |
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Mounting Torque (6-32 Screw)(1) |
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Ð |
8 |
in. lb. |
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*Indicates JEDEC Registered Data. |
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1.Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options.
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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*Thermal Resistance, Junction to Case |
RθJC |
3.5 |
°C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
75 |
°C/W |
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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*Peak Blocking Current |
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IDRM |
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(VD = Rated VDRM, gate open, TJ = 25°C) |
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Ð |
Ð |
10 |
μA |
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(TJ = 110°C) |
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Ð |
Ð |
2 |
mA |
*On-State Voltage (Either Direction) |
VTM |
Ð |
Ð |
2 |
Volts |
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(ITM = 6 A Peak) |
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*Peak Gate Trigger Voltage (Continuous dc) |
VGT |
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Volts |
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(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = ±40°C) |
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MT2(+), G(+); MT2(±), G(±) |
All Types |
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Ð |
1.4 |
2.5 |
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MT2(+), G(±); MT2(±), G(+) |
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Ð |
1.4 |
2.5 |
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(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, |
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TJ = 110°C) |
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MT2(+), G(+); MT2(±), G(±) |
All Types |
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0.2 |
Ð |
Ð |
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MT2(+), G(±); MT2(±), G(+) |
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0.2 |
Ð |
Ð |
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*Holding Current (Either Direction) |
IH |
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mA |
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(Main Terminal Voltage = 12 Vdc, Gate Open, TJ = ±40°C) |
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(Initiating Current = 1 Adc) |
2N6071A,B, 2N6073A,B, 2N6075A,B |
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Ð |
Ð |
30 |
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(TJ = 25°C) |
2N6071A,B, 2N6073A,B, 2N6075A,B |
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Ð |
Ð |
15 |
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Turn-On Time (Either Direction) |
ton |
Ð |
1.5 |
Ð |
μs |
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(ITM = 14 Adc, IGT = 100 mAdc) |
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Blocking Voltage Application Rate at Commutation |
dv/dt(c) |
Ð |
5 |
Ð |
V/μs |
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@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, |
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Commutating di/dt = 2.0 A/ms |
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*Indicates JEDEC Registered Data. |
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2 |
Motorola Thyristor Device Data |
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