Siemens SFH314FA-2, SFH314FA-3, SFH314, SFH314-2, SFH314-3 Datasheet
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SFH 314
SFH 314 FA
Neu: NPN-Silizium-Fototransistor |
SFH 314 |
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New: Silicon NPN Phototransistor |
SFH 314 FA |
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Area not flat |
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0.6 |
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6.9 |
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6.1 |
5.9 |
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0.4 |
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5.7 |
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5.5 |
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2.54mm spacing |
0.8 0.4 |
5.5 |
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4.0 |
ø5.1 ø4.8 |
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1.8 |
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0.6 |
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1.2 |
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3.4 |
0.4 |
29.5 |
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27.5 |
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Chip position |
Cathode (Diode) |
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GEX06630 |
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Collector (Transistor) |
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Approx. weight 0.4 g |
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feo06652
feof6652
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)
●Hohe Linearität
●5 mm-Plastikbauform
Features
●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA)
●High linearity
●5 mm plastic package
Anwendungen |
Applications |
● Computer-Blitzlichtgeräte |
● Computer-controlled flashes |
● Lichtschranken für Gleichund |
● Photointerrupters |
Wechsellichtbetrieb |
● Industrial electronics |
● Industrieelektronik |
● For control and drive circuits |
● “Messen/Steuern/Regeln” |
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Semiconductor Group |
1 |
1997-11-27 |
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SFH 314 |
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SFH 314 FA |
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Typ |
Bestellnummer |
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Type |
Ordering Code |
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SFH 314 |
Q62702-P1668 |
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SFH 314-2 |
Q62702-P1755 |
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SFH 314-3 |
Q62702-P1756 |
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SFH 314 FA |
Q62702-P1675 |
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SFH 314 FA-2 |
Q62702-P1757 |
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SFH 314 FA-3 |
Q62702-P1758 |
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Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
– 55 ... + 100 |
°C |
Operating and storage temperature range |
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Löttemperatur bei Tauchlötung |
TS |
260 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 5 s |
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Dip soldering temperature ³ 2 mm distance |
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from case bottom, soldering time t £ 5 s |
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Löttemperatur bei Kolbenlötung |
TS |
300 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 3 s |
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Iron soldering temperature ³ 2 mm distance |
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from case bottom t £ 3 s |
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Kollektor-Emitterspannung |
VCE |
70 |
V |
Collector-emitter voltage |
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Kollektorstrom |
IC |
50 |
mA |
Collector current |
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Kollektorspitzenstrom, t < 10 ms |
ICS |
100 |
mA |
Collector surge current |
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Emitter-Kollektorspannung |
VEC |
7 |
V |
Emitter-collector voltage |
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Verlustleistung, TA = 25 °C |
Ptot |
200 |
mW |
Total power dissipation |
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Wärmewiderstand |
RthJA |
375 |
K/W |
Thermal resistance |
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Semiconductor Group |
2 |
1997-11-27 |
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