GaAs-IR-Lumineszenzdiode |
SFH 495 P |
GaAs Infrared Emitter |
SFH 4552 |
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29 |
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5.0 |
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0.6 |
27 |
0.8 |
4.2 |
Anode |
5.9 |
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0.4 |
0.4 |
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2.54mm |
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5.5 |
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spacing |
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ø5.1 |
ø4.8 |
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1.8 |
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3.85 |
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0.6 |
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1.2 |
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3.35 |
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0.4 |
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Area not flat |
Chip position |
GEX06971
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Area not flat |
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0.6 |
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6.9 |
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6.1 |
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0.4 |
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5.7 |
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5.9 |
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5.5 |
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5.5 |
2.54 mm |
spacing |
0.8 |
0.4 |
ø5.1 |
ø4.8 |
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1.8 |
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4.0 |
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0.6 |
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1.2 |
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3.4 |
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0.4 |
29.5
27.5Chip position
Cathode (Diode) |
GEX06630 |
Collector (Transistor)
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
fex06971
feo06652
Wesentliche Merkmale
●Stimulierter Emitter mit sehr hohem Wirkungsgrad
●Laserdiode in diffusem Gehäuse
●Besonders geeignet für Impulsbetrieb bei hohen Strömen
●Hohe Zuverlässigkeit
●Gegurtet lieferbar
Anwendungen
●Datenübertragung
●Fernsteuerungen
●„Messen, Steuern, Regeln“
Features
●Stimulated emitter with high efficiency
●Laser diode in diffuse package
●Suitable esp. for pulse operation at high current
●High reliability
●Available on tape and reel
Applications
●Data transfer
●Remote controls
●For drive and control circuits
Semiconductor Group |
1 |
1998-09-18 |
SFH 495 P
SFH 4552
Typ |
Bestellnummer |
Gehäuse |
Type |
Ordering Code |
Package |
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SFH 495 P |
Q62703-Q7891 |
5-mm-LED-Gehäuse (T 1 3/4), plan, schwarz eingefärbt, |
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2.54-mm-Raster, |
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Kathodenkennzeichnung: kürzerer Anschluß |
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5 mm LED package (T 1 3/4), flat, black colored, |
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spacing 2.54 mm, cathode marking: short lead. |
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SFH 4552 |
Q62702-P5054 |
5-mm-LED-Gehäuse (T 1 3/4), plan, weiß diffus eingefärbt, |
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2.54-mm-Raster, |
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Kathodenkennzeichnung: kürzerer Anschluß |
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5 mm LED package (T 1 3/4), flat, white diffuse colored, |
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spacing 2.54 mm, cathode marking: short lead. |
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Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Tstg |
– 40 ... + 85 |
°C |
Operating and storage temperature range |
Top |
0 ... + 85 |
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Sperrspannung |
VR |
1 |
V |
Reverse voltage |
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Stoßstrom, tp = 200 µs, D = 0 |
IFSM |
1 |
A |
Surge current |
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Verlustleistung |
Ptot |
160 |
mW |
Power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
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Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Wellenlänge der Strahlung |
λpeak |
940 |
nm |
Wavelength at peak emission |
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IF = 200 mA, tp = 20 ms |
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Spektrale Bandbreite bei 50 % von Imax |
Δλ |
4 |
nm |
Spectral bandwidth at 50 % of Imax |
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IF = 200 mA |
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Semiconductor Group |
2 |
1998-09-18 |
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