GaAs-IR-Lumineszenzdioden |
SFH 415 |
GaAs Infrared Emitters |
SFH 416 |
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Cathode |
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29 |
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9.0 |
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27 |
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8.2 |
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1.8 |
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7.8 |
5.9 |
spacing |
2.54mm |
1.2 |
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0.4 0.8 |
7.5 |
5.5 |
0.6 |
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ø4.8 ø5.1 |
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0.4 |
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4.8 |
0.6 |
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Area not flat |
4.2 |
0.4 |
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Chip position |
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GEO06645 |
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Approx. weight 0.2 g |
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Area not flat |
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0.6 |
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6.9 |
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6.1 |
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5.9 |
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0.4 |
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5.7 |
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5.5 |
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2.54mm |
spacing |
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0.8 0.4 |
5.5 |
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4.0 |
ø5.1 |
ø4.8 |
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1.8 |
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0.6 |
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1.2 |
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3.4 |
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0.4 |
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29.5 |
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27.5 |
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Chip position |
Cathode (Diode) |
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GEX06630 |
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Collector (Transistor) |
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Approx. weight 0.4 g |
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Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
fexf6626
fex06630
Wesentliche Merkmale
●GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren
●Gute Linearität (Ie = f [IF]) bei hohen Strömen
●Sehr hoher Wirkungsgrad
●Hohe Zuverlässigkeit
●Hohe Impulsbelastbarkeit
●SFH 415: Gehäusegleich mit SFH 300, SFH 203
Anwendungen
●IR-Fernsteuerung von Fernsehund Rundfunkgeräten, Videorecordern, Lichtdimmern
●Gerätefernsteuerungen
Features
●GaAs infrared emitting diodes, fabricated in a liquid phase epitaxy process
●Good linearity (Ie = f [IF]) at high currents
●High efficiency
●High reliability
●High pulse handling capability
●SFH 415: Same package as SFH 300, SFH 203
Applications
●IR remote control of hi-fi and TV-sets, video tape recorders, dimmers
●Remote control of various equipment
Semiconductor Group |
1 |
1997-11-01 |
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SFH 415 |
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SFH 416 |
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Typ |
Bestellnummer |
Gehäuse |
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Type |
Ordering Code |
Package |
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SFH 415 |
Q62702-P296 |
5-mm-LED-Gehäuse (T 13/4), schwarz eingefärbt, An- |
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schluß im 2.54-mm-Raster (1/10’’), |
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SFH 415-T |
Q62702-P1136 |
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Kathodenkennzeichnung: kürzerer Anschluß |
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SFH 415-U |
Q62702-P1137 |
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5 mm LED package (T 13/4), black-colored epoxy resin |
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SFH 416-R |
Q62702-P1139 |
lens, solder tabs lead spacing 2.54 mm (1/10’’), cathode |
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marking: short lead |
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Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
– 55 ... + 100 |
°C |
Operating and storage temperature range |
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Sperrschichttemperatur |
Tj |
100 |
°C |
Junction temperature |
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Sperrspannung |
VR |
5 |
V |
Reverse voltage |
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Durchlaßstrom |
IF |
100 |
mA |
Forward current |
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Stoßstrom, tp = 10 μs, D = 0 |
IFSM |
3 |
A |
Surge current |
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Verlustleistung |
Ptot |
165 |
mW |
Power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
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Semiconductor Group |
2 |
1997-11-01 |
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