Siemens SFH310, SFH310-2, SFH310-3, SFH310FA, SFH310FA-2 Datasheet
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SFH 310
SFH 310 FA
Neu: NPN-Silizium-Fototransistor |
SFH 310 |
New: Silicon NPN Phototransistor |
SFH 310 FA |
Area not flat |
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4.8 |
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4.4 |
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2.73.4
0.6 |
0.4 |
0.7 |
0.4 |
0.8 |
0.4 |
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2.1 |
3.1 |
2.54 mm spacing |
1.2 |
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1.1 0.9 |
3.5 |
ø2.9 ø2.7 |
0.4 |
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1.8 |
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3.7 |
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0.6 |
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29.0 |
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6.1 |
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27.0 |
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5.7 |
Chip position |
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Collector/ |
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Cathode |
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GEX06710 |
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
feo06653
feof6653
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
(SFH 310) und bei 880 nm (SFH 310 FA)
●Hohe Linearität
●3 mm-Plastikbauform
Anwendungen
●Lichtschranken für Gleichund Wechsellichtbetrieb
●Industrieelektronik
●“Messen/Steuern/Regeln”
Features
●Especially suitable for applications from 400 nm to 1100 nm (SFH 310) and of 880 nm (SFH 310 FA)
●High linearity
●3 mm plastic package
Applications
●Photointerrupters
●Industrial electronics
●For control and drive circuits
Semiconductor Group |
1 |
1998-037-.1396 |
SFH 310
SFH 310 FA
Typ |
Bestellnummer |
Type |
Ordering Code |
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SFH 310 |
Q62702-P874 |
SFH 310-2 |
on request |
SFH 310-3 |
on request |
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SFH 310 FA |
Q62702-P1673 |
SFH 310 FA-2 |
on request |
SFH 310 FA-3 |
on request |
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Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
– 55 ... + 100 |
°C |
Operating and storage temperature range |
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Löttemperatur bei Tauchlötung |
TS |
260 |
°C |
Lötstelle ≥ 2 mm vom Gehäuse, |
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Lötzeit t ≤ 5 s |
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Dip soldering temperature ≥ 2 mm distance |
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from case bottom, soldering time t ≤ 5 s |
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Löttemperatur bei Kolbenlötung |
TS |
300 |
°C |
Lötstelle ≥ 2 mm vom Gehäuse, |
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Lötzeit t ≤ 3 s |
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Iron soldering temperature ≥ 2 mm distance |
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from case bottom, soldering time t ≤ 3 s |
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Kollektor-Emitterspannung |
VCE |
70 |
V |
Collector-emitter voltage |
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Kollektorstrom |
IC |
50 |
mA |
Collector current |
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Kollektorspitzenstrom, τ < 10 µs |
ICS |
100 |
mA |
Collector surge current |
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Verlustleistung, TA = 25 °C |
Ptot |
165 |
mW |
Total power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
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Semiconductor Group |
2 |
1998-07-13 |
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