Laser Diode in TO-220 Package |
SPL 2Yxx |
1.0 W cw (Class 4 Laser Product) |
(SFH 4874x1) |
Features
∙Efficient radiation source for pulsed and cw-operation
∙Reliable InGa(Al)As strained layer quantum-well material
∙Small TO-220 package with efficient thermal coupling
∙Includes thermistor to control temperature/wavelength
∙Single emitting area 200 μm × 1 µm
∙Cylindrical correction for a near circular farfield pattern
Applications
∙Pumping solid state lasers (Nd: YAG, Yb: YAG, …)
∙Medical applications
∙Laser soldering
∙Energy transmission
∙Testing and measuring applications
Type |
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Old Type |
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Wavelength *) |
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Ordering Code |
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(as of Oct. 1996) |
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SPL 2Y81 |
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SFH 487401 |
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808 nm |
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Q62702-P367 |
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SPL 2Y85 |
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SFH 487421 |
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850 nm |
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Q62702-P1677 |
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SPL 2Y94 |
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SFH 487441 |
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940 nm |
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Q62702-P1630 |
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SPL 2Y98 |
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– |
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980 nm |
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on request |
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*) Other wavelengths in the range of 780 nm ... 980 nm are available on request. |
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Maximum Ratings |
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(TA = 25 °C) |
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Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Output power (continuous wave) 1) |
P |
– |
– |
1.1 |
W |
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opt |
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Output power |
(quasi-continuous wave) 1) |
P |
– |
– |
1.5 |
W |
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(tp ≤ 150 μs, duty cycle ≤ 1%) |
qcw |
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Reverse voltage |
VR |
– |
– |
3 |
V |
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Operating temperature |
Top |
– 10 |
… |
+ 60 |
°C |
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Storage temperature |
Tstg |
– 40 |
… |
+ 85 |
°C |
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Maximum soldering temperature, max. 5 s |
Ts |
– |
– |
250 |
°C |
1) Optical power measurements refer to a detector with NA = 0.6
Semiconductor Group |
1 |
02.97 |
SPL 2Yxx
(SFH 4874x1)
Diode Characteristics
(TA = 25 °C)
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Emission wavelength 1) |
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λpeak |
803 |
808 |
813 |
nm |
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840 |
850 |
860 |
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935 |
940 |
945 |
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Spectral width (FWHM) 1) |
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Δλ |
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2 |
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nm |
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Output power 2) |
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P |
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1.0 |
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W |
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opt |
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Differential efficiency 2) |
808 nm |
η |
0.75 |
0.95 |
1.1 |
W/A |
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850 nm |
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0.75 |
0.85 |
1.0 |
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940 nm |
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0.70 |
0.80 |
0.9 |
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Threshold current |
808 nm |
Ith |
0.40 |
0.45 |
0.55 |
A |
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850 nm |
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0.30 |
0.40 |
0.50 |
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940 nm |
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0.30 |
0.35 |
0.40 |
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Operating current 1) |
808 nm |
I |
1.3 |
1.5 |
1.8 |
A |
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850 nm |
op |
1.3 |
1.5 |
1.8 |
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940 nm |
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1.4 |
1.6 |
1.8 |
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Operating voltage 1) |
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V |
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2.0 |
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V |
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op |
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Differential series resistance |
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rs |
– |
0.2 |
0.4 |
Ω |
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Characteristic temperature (threshold) 3) |
T0 |
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150 |
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K |
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Temperature coefficient of operating |
∂Iop/ ∂T |
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0.5 |
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%/K |
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current |
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Temperature coefficient of wavelength 4) |
∂λ / ∂T |
0.25 |
0.27 |
0.30 |
nm/K |
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Thermal resistance (junction → heat sink) |
Rth JA |
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10 |
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K/W |
1)Standard operating conditions refer to 1 W cw measured with NA = 0.6
2)Optical power measurements refer to a detector with NA = 0.6
3)Model for the thermal behavior of threshold current: Ith(T2) = Ith(T1) × exp(T2 – T1)/T0
4)Depending on emission wavelength
NTC Thermistor
Parameter |
Symbol |
Typ. Values |
Unit |
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Resistance at room temperature (25 °C) |
RNTC |
10 |
kΩ |
Semiconductor Group |
2 |