FEATURES
•Very High CTR at IF=1 mA, VCE=0.5 V
-SFH608-2, 63-125%
-SFH608-3, 100-200%
-SFH608-4, 160-320%
-SFH608-5, 250-500%
•Specified Minimum CTR at IF=0.5 mA, VCE=1.5 V: ≥ 32% (typ. 120%)
•Good CTR Linearity with Forward Current
•Low CTR Degradation
•High Collector-Emitter Voltage VCEO=55 V
•Isolation Test Voltage: 5300 VACRMS
•Low Current Input
•Low Coupling Capacitance
•High Common Mode Transient Immunity
•Phototransistor Optocoupler in 6 Pin DIP Package
•Field Effect Stable: TRIOS*
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D E VDE 0884 Available with Option 1 |
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Underwriters Lab File #E52744 |
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Applications |
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Telecommunications |
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Industrial Controls |
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Office Machines |
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Microprocessor System Interfaces |
DESCRIPTION
The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for low current switching applications. The SFH608 is packaged in a six pin plastic DIP.
*TRIOS—TRansparent IOn Shield
SFH 608
PHOTOTRANSISTOR, 5.3 KV, TRIOS
LOW CURRENT
OPTOCOUPLER
Dimensions in inches (mm) |
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2 |
1 |
Pin One ID |
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3 |
Anode |
1 |
6 |
Base |
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.248 (6.30) |
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.256 (6.50) |
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Cathode |
2 |
5 |
Collector |
4 |
5 |
6 |
NC |
3 |
4 |
Emitter |
.335 (8.50) |
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.343 (8.70) |
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.039 |
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.300 (7.62) |
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typ. |
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(1.00) |
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Min. |
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.130 (3.30) |
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.150 (3.81) |
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4° |
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18°typ. |
.110 (2.79) |
typ. |
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.020 (.051) min. |
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.010 (.25) |
.150 (3.81) |
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.031 (0.80) |
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.018 (0.45) |
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.014 (.35) |
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.035 (0.90) |
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.300 (7.62) |
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.022 (0.55) |
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.100 (2.54) typ. |
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.347 (8.82) |
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Maximum Ratings (TA=25°C) |
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Emitter |
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Reverse Voltage ................................................................................... |
6 V |
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DC Forward Current ........................................................................ |
50 mA |
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Surge Forward Current (tp≤10 µs) ................................................... |
2.5 A |
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Total Power Dissipation ................................................................. |
70 mW |
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Detector |
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Collector-Emitter Voltage .................................................................. |
55 V |
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Collector-Base Voltage....................................................................... |
55 V |
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Emitter-Base Voltage .......................................................................... |
7 V |
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Collector Current ............................................................................ |
50 mA |
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Surge Collector Current (tp≤1 ms) ................................................ |
100 mA |
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Total Power Dissipation ............................................................... |
150 mW |
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Isolation Test Voltage (between emitter and detector, refer |
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to climate DIN 40046 part 2 Nov. 74) (t=1 sec.).............. |
5300 VACRMS |
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Creepage ................................................................................................. |
≥7 mm |
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Clearance................................................................................................. |
≥7 mm |
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Comparative Tracking Index |
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per DIN IEC 112/VDE 0303, part1 ................................................... |
175 |
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Isolation Resistance |
≥1012 Ω |
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=500 V, T =25°C......................................................................... |
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IO |
A |
≥1011 Ω |
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=500 V, T =100°C....................................................................... |
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IO |
A |
-55°C to +150°C |
Storage Temperature Range .......................................... |
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Operating Temperature Range....................................... |
-55°C to +100°C |
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Junction Temperature...................................................................... |
100°C |
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Soldering Temperature (max. 10 sec., dip soldering: |
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distance to seating plane≥1.5 mm) ............................................. |
260°C |
5–1