Siemens SFH480402, SFH480442, SPLCG81, SPLCG85, SPLCG94 Datasheet

Laser Diode on Submount	SPL CGxx
1.0 W cw (Class 4 Laser Product)	(SFH 4804x2)

Features

∙ Efficient radiation source for cw and pulsed operation

∙Reliable InGa(Al)As strained quantum-well material

∙Single emitting area 200 µm × 1 µm

∙Small C-type copper submount for OEM designs

Applications

∙Pumping solid state lasers (Nd: YAG, Yb: YAG, …)

∙Laser soldering, heating, illumination

∙Printing, marking, surface processing

∙Medical applications

∙Testing and measurement applications

Type		Old Type		Wavelength *)			Ordering Code
		(as of Oct. 1996)
SPL CG81		SFH 480402		808 nm			Q62702-P358
SPL CG85		–		850 nm			on request
SPL CG94		SFH 480442		940 nm			Q62702-P1617
SPL CG98		–		980 nm			on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(TA = 25 °C)
Parameter			Symbol			Values			Unit
					min.	typ.		max.
Output power (continuous wave) 1)			P		–	–		1.1	W
			opt
Output power	(quasi-continuous wave) 1)		P		–	–		1.5	W
(tp ≤ 150 μs, duty cycle ≤ 1%)			qcw
Reverse voltage			VR		–	–		3	V
Operating temperature 2)			Top		– 10	…		+ 60	°C
Storage temperature 2)			Tstg		– 40	…		+ 85	°C
Soldering temperature, max. 10 s			Ts		–	–		140	°C

1)Optical power measurements refer to a detector with NA = 0.6

2)Bedewing is excluded

Semiconductor Group

1

02.97

SPL CGxx

(SFH 4804x2)

Characteristics

(TA = 25 °C)

Parameter		Symbol		Values		Unit
			min.	typ.	max.
Emission wavelength 1)		λpeak	803	808	813	nm
			840	850	860
			935	940	945
Spectral width (FWHM) 1)		Δλ		2		nm
Output power 2)		P		1.0		W
		opt
Differential efficiency 2)	808 nm	η	0.75	0.95	1.1	W/A
	850 nm		0.75	0.85	1.0
	940 nm		0.70	0.80	0.9
Threshold current	808 nm	Ith	0.40	0.45	0.55	A
	850 nm		0.30	0.40	0.50
	940 nm		0.30	0.35	0.40
Operating current 1)	808 nm	I	1.3	1.5	1.8	A
	850 nm	op	1.3	1.5	1.8
	940 nm		1.4	1.6	1.8
Operating voltage 1)		V		2.0		V
		op
Differential series resistance		rs	–	0.2	0.4	Ω
Characteristic temperature (threshold) 3)		T0		150		K
Temperature coefficient of operating		∂Iop/ ∂T		0.5		%/K
current
Temperature coefficient of wavelength 4)		∂λ / ∂T	0.25	0.27	0.30	nm/K
Thermal resistance (junction → heat sink)		Rth JA		10		K/W

1)Standard operating conditions refer to 1 W cw measured with NA = 0.6

2)Optical power measurements refer to a detector with NA = 0.6

3)Model for the thermal behavior of threshold current: Ith(T2) = Ith(T1) × exp(T2 – T1)/T0

4)Depending on emission wavelength

Semiconductor Group

2