GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
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Cathode (SFH 480) |
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Radiant |
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Anode (SFH 216, SFH 231, |
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Sensitive area |
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Chip position (2.7) |
SFH 400) |
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.1 |
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1 |
.9 |
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ø0.45 |
spacing |
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ø4.8 ø4.6 |
2.54mm |
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ø5.6 ø5.3 |
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9 |
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5.3 |
14.5 |
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GEO06314 |
5.0 |
12.5 |
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7.4 |
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6.6 |
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Approx. weight 0.5 g
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Anode = SFH 481 |
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(2.7) |
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Cathode = SFH 401 |
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ø0.45 |
Chip position |
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(package) |
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1 |
.9 |
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mm2.54 spacing |
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ø4.8 |
ø4.6 |
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9 |
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welded |
5.3 |
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ø5.6 |
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glass |
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14.5 |
5.0 |
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ø5.3 |
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6.4 |
lens |
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GET06091 |
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12.5 |
5.6 |
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Approx. weight 0.35 g
5.5Radiant sensitive area
Chip position (2.7) |
5.0 |
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1 |
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1 |
.9 |
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ø0.45 |
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ø4.8 ø4.6 |
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2.54 |
spacing |
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9 |
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14.5 |
5.3 |
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ø5.6 |
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12.5 |
5.0 |
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ø5.3 |
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Cathode (SFH 402, BPX 65) |
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GET06013 |
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Anode (SFH 482) |
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Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
SFH 400 SFH 401 SFH 402
fet06090
fet06091
fet06092
Semiconductor Group |
1 |
1998-04-16 |
SFH 400,
SFH 401, SFH 402
Wesentliche Merkmale
●Hergestellt im Schmelzepitaxieverfahren
●Kathode galvanisch mit dem Gehäuseboden verbunden
●Hohe Zuverlässigkeit
●SFH 400: Gehäusegleich mit SFH 216
●SFH 401: Gehäusegleich mit BPX 43, BPY 62
●SFH 402: Gehäusegleich mit BPX 38, BPX 65
Anwendungen
●Lichtschranken für Gleichund Wechsellichtbetrieb
●IR-Fernsteuerungen
●Industrieelektronik
●“Messen/Steuern/Regeln”
Features
●Fabricated in a liquid phase epitaxy process
●Cathode is electrically connected to the case
●High reliability
●SFH 400: Same package as SFH 216
●SFH 401: Same package as BPX 43, BPY 62
●SFH 402: Same package as BPX 38, BPX 65
Applications
●Photointerrupters
●IR remote control
●Industrial electronics
●For drive and control circuits
Typ |
Bestellnummer |
Gehäuse |
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Type |
Ordering Code |
Package |
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SFH 400 |
Q62702-P96 |
18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes |
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Gehäuse, Anschlüsse im 2.54-mm-Raster (1/10’’) |
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SFH 400-3 |
Q62702-P784 |
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18 A3 DIN 41876 (TO-18) glass lens, hermetically |
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SFH 401-2 |
Q62702-P786 |
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sealed package, solder tabs lead spacing 2.54 mm |
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SFH 401-3 |
Q62702-P787 |
(1/10’’) |
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SFH 402 |
Q62702-P98 |
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SFH 402-3 |
Q62702-P790 |
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SFH 402-2 |
on request |
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Semiconductor Group |
2 |
1998-04-16 |
SFH 400,
SFH 401, SFH 402
Grenzwerte (TC = 25 °C)
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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SFH 401: |
Top; Tstg |
– 55 ... + 100 |
°C |
Betriebsund Lagertemperatur |
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Operating and storage temperature range |
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SFH 400, SFH 402: |
Top; Tstg |
– 55 ... + 125 |
°C |
Betriebsund Lagertemperatur |
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Operating and storage temperature range |
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Sperrschichttemperatur |
Tj |
100 |
°C |
Junction temperature |
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Sperrspannung |
VR |
5 |
V |
Reverse voltage |
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Durchlaßstrom |
IF |
300 |
mA |
Forward current |
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Stoßstrom, tp = 10 µs, D = 0 |
IFSM |
3 |
A |
Surge current |
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Verlustleistung |
Ptot |
470 |
mW |
Power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
RthJC |
160 |
K/W |
Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Wellenlänge der Strahlung |
λpeak |
950 |
nm |
Wavelength at peak emission |
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IF = 100 mA, tp = 20 ms |
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Spektrale Bandbreite bei 50 % von Imax |
Δλ |
55 |
nm |
Spectral bandwidth at 50 % of Imax |
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IF = 100 mA, tp = 20 ms |
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Abstrahlwinkel |
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Half angle |
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SFH 400 |
ϕ |
± 6 |
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SFH 401 |
ϕ |
± 15 |
Grad |
SFH 402 |
ϕ |
± 40 |
deg. |
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Aktive Chipfläche |
A |
0.25 |
mm2 |
Active chip area |
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Semiconductor Group |
3 |
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1998-04-16 |