Siemens SFH400-3, SFH401-2, SFH401-3, SFH402, SFH402-2 Datasheet

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Siemens SFH400-3, SFH401-2, SFH401-3, SFH402, SFH402-2 Datasheet

GaAs-IR-Lumineszenzdiode

GaAs Infrared Emitter

 

Cathode (SFH 480)

 

 

 

Radiant

 

Anode (SFH 216, SFH 231,

 

 

 

Sensitive area

Chip position (2.7)

SFH 400)

 

 

.1

 

 

 

 

 

 

1

.9

 

 

 

 

 

 

 

ø0.45

spacing

 

 

0

ø4.8 ø4.6

2.54mm

1

 

ø5.6 ø5.3

 

 

 

 

.

 

 

 

 

 

0

1

 

 

 

 

 

.

 

 

 

 

 

9

 

 

5.3

14.5

 

 

 

 

GEO06314

5.0

12.5

 

 

 

 

 

 

 

 

 

7.4

 

 

 

 

 

 

6.6

 

 

 

 

 

 

Approx. weight 0.5 g

 

 

 

 

 

 

 

Anode = SFH 481

 

 

(2.7)

 

 

 

 

Cathode = SFH 401

 

ø0.45

Chip position

 

.1

(package)

 

 

 

 

 

 

 

 

 

 

1

.9

 

mm2.54 spacing

 

 

ø4.8

ø4.6

 

 

 

0

 

 

 

1

 

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

0

1

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

9

 

 

 

 

welded

5.3

 

 

 

 

 

ø5.6

 

 

 

glass

 

 

 

 

 

14.5

5.0

 

 

 

ø5.3

 

 

6.4

lens

 

 

 

 

 

 

 

 

GET06091

 

 

12.5

5.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approx. weight 0.35 g

5.5Radiant sensitive area

Chip position (2.7)

5.0

 

 

1

 

 

 

 

.

 

 

 

 

 

1

.9

 

ø0.45

 

 

 

 

0

 

ø4.8 ø4.6

1

 

2.54

spacing

 

 

 

 

 

.

 

 

 

 

 

0

1

 

 

 

 

 

.

 

 

 

 

 

9

 

 

 

14.5

5.3

 

 

 

ø5.6

 

12.5

5.0

 

 

 

ø5.3

 

Cathode (SFH 402, BPX 65)

 

 

 

GET06013

Anode (SFH 482)

 

 

 

 

 

 

Approx. weight 0.5 g

Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

SFH 400 SFH 401 SFH 402

fet06090

fet06091

fet06092

Semiconductor Group

1

1998-04-16

SFH 400,

SFH 401, SFH 402

Wesentliche Merkmale

Hergestellt im Schmelzepitaxieverfahren

Kathode galvanisch mit dem Gehäuseboden verbunden

Hohe Zuverlässigkeit

SFH 400: Gehäusegleich mit SFH 216

SFH 401: Gehäusegleich mit BPX 43, BPY 62

SFH 402: Gehäusegleich mit BPX 38, BPX 65

Anwendungen

Lichtschranken für Gleichund Wechsellichtbetrieb

IR-Fernsteuerungen

Industrieelektronik

“Messen/Steuern/Regeln”

Features

Fabricated in a liquid phase epitaxy process

Cathode is electrically connected to the case

High reliability

SFH 400: Same package as SFH 216

SFH 401: Same package as BPX 43, BPY 62

SFH 402: Same package as BPX 38, BPX 65

Applications

Photointerrupters

IR remote control

Industrial electronics

For drive and control circuits

Typ

Bestellnummer

Gehäuse

Type

Ordering Code

Package

 

 

 

SFH 400

Q62702-P96

18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes

 

 

Gehäuse, Anschlüsse im 2.54-mm-Raster (1/10’’)

SFH 400-3

Q62702-P784

 

 

18 A3 DIN 41876 (TO-18) glass lens, hermetically

SFH 401-2

Q62702-P786

sealed package, solder tabs lead spacing 2.54 mm

 

 

 

 

SFH 401-3

Q62702-P787

(1/10’’)

SFH 402

Q62702-P98

 

 

 

 

SFH 402-3

Q62702-P790

 

 

 

 

SFH 402-2

on request

 

 

 

 

Semiconductor Group

2

1998-04-16

SFH 400,

SFH 401, SFH 402

Grenzwerte (TC = 25 °C)

Maximum Ratings

Bezeichnung

Symbol

Wert

Einheit

Description

Symbol

Value

Unit

 

 

 

 

SFH 401:

Top; Tstg

– 55 ... + 100

°C

Betriebsund Lagertemperatur

 

 

 

Operating and storage temperature range

 

 

 

 

 

 

 

SFH 400, SFH 402:

Top; Tstg

– 55 ... + 125

°C

Betriebsund Lagertemperatur

 

 

 

Operating and storage temperature range

 

 

 

 

 

 

 

Sperrschichttemperatur

Tj

100

°C

Junction temperature

 

 

 

 

 

 

 

Sperrspannung

VR

5

V

Reverse voltage

 

 

 

 

 

 

 

Durchlaßstrom

IF

300

mA

Forward current

 

 

 

 

 

 

 

Stoßstrom, tp = 10 µs, D = 0

IFSM

3

A

Surge current

 

 

 

 

 

 

 

Verlustleistung

Ptot

470

mW

Power dissipation

 

 

 

 

 

 

 

Wärmewiderstand

RthJA

450

K/W

Thermal resistance

RthJC

160

K/W

Kennwerte (TA = 25 °C)

 

 

 

Characteristics

 

 

 

 

 

 

 

Bezeichnung

Symbol

Wert

Einheit

Description

Symbol

Value

Unit

 

 

 

 

Wellenlänge der Strahlung

λpeak

950

nm

Wavelength at peak emission

 

 

 

IF = 100 mA, tp = 20 ms

 

 

 

 

 

 

 

Spektrale Bandbreite bei 50 % von Imax

Δλ

55

nm

Spectral bandwidth at 50 % of Imax

 

 

 

IF = 100 mA, tp = 20 ms

 

 

 

Abstrahlwinkel

 

 

 

Half angle

 

 

 

SFH 400

ϕ

± 6

 

SFH 401

ϕ

± 15

Grad

SFH 402

ϕ

± 40

deg.

 

 

 

 

Aktive Chipfläche

A

0.25

mm2

Active chip area

 

 

 

 

 

 

 

Semiconductor Group

3

 

1998-04-16

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