SFH 203 P
SFH 203 PFA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit |
SFH 203 |
P |
Silicon PIN Photodiode with Very Short Switching Time |
SFH 203 |
PFA |
feo06644
feof6644
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 203 P) und bei 880 nm (SFH 203 PFA)
●Kurze Schaltzeit (typ. 5 ns)
●5 mm-Plastikbauform im LED-Gehäuse
Anwendungen
●Industrieelektronik
●“Messen/Steuern/Regeln”
●Schnelle Lichtschranken für Gleichund Wechsellichtbetrieb
●LWL
Typ (*vorher) |
Bestellnummer |
Type (*formerly) |
Ordering Code |
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SFH 203 P |
Q62702-P946 |
(*SFH 217) |
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SFH 203 PFA |
Q62702-P947 |
(*SFH 217 F) |
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Features
●Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA)
●Short switching time (typ. 5 ns)
●5 mm LED plastic package
Applications
●Industrial electronics
●For control and drive circuits
●Photointerrupters
●Fiber optic transmission systems
Semiconductor Group |
1 |
03.96 |
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SFH 203 P |
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SFH 203 PFA |
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Grenzwerte |
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Maximum Ratings |
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Bezeichnung |
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Einheit |
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Description |
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Value |
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Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
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– 55 ... + 100 |
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°C |
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Operating and storage temperature range |
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Löttemperatur (Lötstelle 2 mm vom |
TS |
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300 |
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°C |
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Gehäuse entfernt bei Lötzeit t £ 3 s) |
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Soldering temperature in 2 mm distance |
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from case bottom (t £ 3 s) |
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Sperrspannung |
VR |
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50 |
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V |
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Reverse voltage |
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Verlustleistung |
Ptot |
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100 |
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mW |
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Total power dissipation |
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Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
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Einheit |
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Description |
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Symbol |
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Value |
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Unit |
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SFH 203 P |
SFH 203 PFA |
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Fotoempfindlichkeit |
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Spectral sensitivity |
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VR = 5 V, Normlicht/standard light A, |
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S |
9.5 (³ 5) |
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nA/Ix |
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T = 2856 K |
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VR = 5 V, l = 950 nm, Ee = 1 mW/cm2 |
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S |
– |
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6.2 (³ 3.6) |
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mA |
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Wellenlänge der max. Fotoempfindlichkeit |
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lS max |
850 |
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900 |
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Wavelength of max. sensitivity |
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Spektraler Bereich der Fotoempfindlichkeit |
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l |
400 ... 1100 |
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750 ... 1100 |
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S = 10 % von Smax |
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Spectral range of sensitivity |
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S = 10 % of Smax |
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Bestrahlungsempfindliche Fläche |
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A |
1 |
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1 |
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mm2 |
Radiant sensitive area |
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Abmessung der bestrahlungsempfindlichen |
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L ´ B |
1 ´ 1 |
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1 ´ 1 |
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mm ´ mm |
Fläche |
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Dimensions of radiant sensitive area |
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L ´ W |
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Abstand Chipoberfläche zu Gehäuseober- |
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H |
0.4 ... 0.7 |
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0.4 ... 0.7 |
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mm |
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fläche |
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Distance chip front to case surface |
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Semiconductor Group |
2 |
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