SFH 213
SFH 213 FA
Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit |
SFH 213 |
New: Silicon PIN Photodiode with Very Short |
SFH 213 FA |
Switching Time |
|
fex06626
fexf6626
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
(SFH 213) und bei 880 nm (SFH 213 FA)
●Kurze Schaltzeit (typ. 5 ns)
●5 mm-Plastikbauform im LED-Gehäuse
●Auch gegurtet lieferbar
Anwendungen
●Industrieelektronik
●“Messen/Steuern/Regeln”
●Schnelle Lichtschranken für Gleichund Wechsellichtbetrieb
●LWL
Typ |
Bestellnummer |
Type |
Ordering Code |
|
|
SFH 213 |
Q62702-P930 |
|
|
SFH 213 FA |
Q62702-P1671 |
|
|
Features
●Especially suitable for applications from 400 nm to 1100 nm (SFH 213) and of 880 nm (SFH 213 FA)
●Short switching time (typ. 5 ns)
●5 mm LED plastic package
●Also available on tape
Applications
●Industrial electronics
●For control and drive circuits
●Photointerrupters
●Fiber optic transmission systems
Semiconductor Group |
1 |
03.96 |
|
|
|
|
|
|
|
SFH 213 |
|
|
|
|
|
|
|
|
SFH 213 FA |
|
|
|
|
|
|
|
|
|
|
Grenzwerte |
|
|
|
|
|
|
|
|
Maximum Ratings |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Bezeichnung |
|
Symbol |
|
Wert |
|
|
Einheit |
|
Description |
|
Symbol |
|
Value |
|
|
Unit |
|
|
|
|
|
|
|
|
|
|
Betriebsund Lagertemperatur |
|
Top; Tstg |
|
– 55 ... + 100 |
|
°C |
||
Operating and storage temperature range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Löttemperatur (Lötstelle 2 mm vom |
|
TS |
|
300 |
|
|
°C |
|
Gehäuse entfernt bei Lötzeit t £ 3 s) |
|
|
|
|
|
|
|
|
Soldering temperature in 2 mm distance |
|
|
|
|
|
|
|
|
from case bottom (t £ 3 s) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Sperrspannung |
|
VR |
|
50 |
|
|
V |
|
Reverse voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Verlustleistung |
|
Ptot |
|
100 |
|
|
mW |
|
Total power dissipation |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Kennwerte (TA = 25 °C) |
|
|
|
|
|
|
|
|
Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Bezeichnung |
|
Symbol |
|
Wert |
|
Einheit |
||
Description |
|
Symbol |
|
Value |
|
Unit |
||
|
|
|
|
|
|
|||
|
|
|
SFH 213 |
SFH 213 FA |
|
|||
|
|
|
|
|
|
|
|
|
Fotoempfindlichkeit |
|
|
|
|
|
|
|
|
Spectral sensitivity |
|
|
|
|
|
|
|
|
VR = 5 V, Normlicht/standard light A, |
|
S |
135 (³ 100) |
– |
|
nA/Ix |
||
T = 2856 K, |
|
|
|
|
|
|
|
|
VR = 5 V, l = 870 nm, Ee = 1 mW/cm2 |
|
S |
– |
90 (³ 65) |
|
mA |
||
Wellenlänge der max. Fotoempfindlichkeit |
|
lS max |
850 |
|
900 |
|
|
nm |
Wavelength of max. sensitivity |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Spektraler Bereich der Fotoempfindlichkeit |
|
l |
400 ...1100 |
750 ... 1100 |
nm |
|||
S = 10 % von Smax |
|
|
|
|
|
|
|
|
Spectral range of sensitivity |
|
|
|
|
|
|
|
|
S = 10 % of Smax |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Bestrahlungsempfindliche Fläche |
|
A |
1 |
|
1 |
|
|
mm2 |
Radiant sensitive area |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Abmessung der bestrahlungsempfindlichen |
|
L ´ B |
1 ´ 1 |
|
1 ´ 1 |
|
|
mm ´ mm |
Fläche |
|
|
|
|
|
|
|
|
Dimensions of radiant sensitive area |
|
L ´ W |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Abstand Chipoberfläche zu Gehäuseober- |
|
H |
5.1 ... 5.7 |
5.1 ... 5.7 |
|
mm |
||
fläche |
|
|
|
|
|
|
|
|
Distance chip front to case surface |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Semiconductor Group |
2 |
|
|
|
|
|
|
|
Loading...