SFH 229
SFH 229 FA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit |
SFH 229 |
Silicon PIN Photodiode with Very Short Switching Time |
SFH 229 FA |
feo06447
feof6447
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm (SFH 229) und bei 880 nm (SFH 229 FA)
●Kurze Schaltzeit (typ. 10 ns)
●3 mm-Plastikbauform im LED-Gehäuse
●Auch gegurtet lieferbar
Anwendungen
●Lichtschranken für Gleichund Wechselbetrieb
●Industrieelektronik
●“Messen/Steuern/Regeln”
Typ (*vorher) |
Bestellnummer |
Type (*formerly) |
Ordering Code |
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SFH 229 |
Q62702-P215 |
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SFH 229 FA |
Q62702-P216 |
(*SFH 229 F) |
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Features
●Especially suitable for applications from 380 nm to 1100 nm (SFH 229) and of 880 nm (SFH 229 FA)
●Short switching time (typ. 10 ns)
●3 mm LED plastic package
●Also available on tape
Applications
●Photointerrupters
●Industrial electronics
●For control and drive circuits
Semiconductor Group |
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01.97 |
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SFH 229 |
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SFH 229 FA |
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Grenzwerte |
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Maximum Ratings |
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Bezeichnung |
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Wert |
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Einheit |
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Description |
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Value |
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Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
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– 55 ... + 100 |
°C |
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Operating and storage temperature range |
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Löttemperatur (Lötstelle 2 mm vom |
TS |
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230 |
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°C |
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Gehäuse entfernt bei Lötzeit t £ 3 s) |
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Soldering temperature in 2 mm distance |
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from case bottom (t £ 3 s) |
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Sperrspannung |
VR |
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20 |
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V |
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Reverse voltage |
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Verlustleistung |
Ptot |
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150 |
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mW |
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Total power dissipation |
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Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
Symbol |
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Wert |
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Einheit |
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Description |
Symbol |
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Value |
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Unit |
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SFH 229 |
SFH 229 FA |
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Fotoempfindlichkeit |
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Spectral sensitivity |
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VR = 5 V, Normlicht/standard light A, |
S |
28 (³ 18) |
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nA/Ix |
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T = 2856 K, |
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VR = 5 V, l = 950 nm, Ee = 1 mW/cm2 |
S |
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20 (³ 10.8) |
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mA |
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Wellenlänge der max. Fotoempfindlichkeit |
lS max |
860 |
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900 |
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nm |
Wavelength of max. sensitivity |
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Spektraler Bereich der Fotoempfindlichkeit |
l |
380 ... 1100 |
730 ... 1100 |
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nm |
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S = 10 % von Smax |
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Spectral range of sensitivity |
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S = 10 % of Smax |
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Bestrahlungsempfindliche Fläche |
A |
0.3 |
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0.3 |
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mm2 |
Radiant sensitive area |
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Abmessung der bestrahlungsempfindlichen |
L ´ B |
0.56 ´ 0.56 |
0.56 ´ 0.56 |
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mm ´ mm |
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Fläche |
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Dimensions of radiant sensitive area |
L ´ W |
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Abstand Chipoberfläche zu Gehäuse- |
H |
2.4 ... 2.8 |
2.4 ... 2.8 |
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mm |
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oberfläche |
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Distance chip front to case surface |
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Semiconductor Group |
2 |
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