Siemens SFH6315T, SFH6316T, SFH6343T Datasheet

W NE FEATURES

•Surface Mountable

•Industry Standard SOIC-8 Footprint

•Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes

•Isolation Voltage, 2500 VRMS

•Very High Common Mode Transient Immunity: 15000 V/µs at VCM=1500 V Guaranteed (SFH6343T)

•High Speed: 1 Mb/s

•TTL Compatible

•Guaranteed AC and DC Performance Over Temperature: 0°C to 70°C

•Open Collector Output

•Pin Compatible with HP Optocouplers SFH6315T—HCPL0500 SFH6316T—HCPL0501 SFH6343T—HCPL0453

•Available in Tape and Reel (suffix T)

APPLICATIONS

•Line Receivers

•Logic Ground Isolation

•Analog Signal Ground Isolation

•Replace Pulse Transformers

DESCRIPTION

The SFH6315T/16T/43T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open collector output function allows circuit designers to adjust the load conditions when interfacing with different logic systems such as TTL, CMOS, etc.

Because the SFH6343T has a Faraday shield on the detector chip, it can also reject and minimize high input to output common mode transient voltages. There is no base connection, further reducing the potential electrical noise entering the package.

The SFH6315T/16T/43T are packaged in industry standard SOIC-8 packages and are suitable for surface mounting.

Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage...........................................................	3 V
DC Forward Current................................................	25 mA
Surge Forward Current ................................................	1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation (TA≤70°C) ........................	45 mW

			SFH6315T
			SFH6316T
			SFH6343T
	HIGH SPEED OPTOCOUPLER
	Package Dimensions in Inches (mm)
			NC 1	SFH6315T/6T	VCC
				8
	.120±.002		A 2	7	Base VB
			K 3	6	C
	(3.05±.05)		NC 4	5	E
		C .154±.002	NC 1	SFH6343T	VCC
	.240			8
	(6.10)	L(3.91±.05)	A 2	7	NC
		.016	K 3	6	C
	Pin 1		NC 4	5	E
		(.41)
				7°
	.192±.005	.015±.002		40° .058±.005
	(4.88±.13)	(.38±.05)		(1.49±.13)
	.004 (.10)				.125±.005
	.008 (.20)
		.008 (.20)		5°max.	(3.18±.13)

.050 (1.27) typ.

R.010

Lead

.020±.004

(.25) max.

Coplanarity

.021 (.53)

(.15±.10)

±.0015 (.04)

2 plcs.

max.

TOLERANCE: ± .005 (unless otherwise noted)

Absolute Maximum Ratings (continued)

Detector (Si Photodiode + Transistor)

Supply Voltage ............................................................

–0.5 to 30 V

Output Voltage ..........................................................

–0.5 to ≥20 V

Output Current ......................................................................

8 mA

Total Power Dissipation (TA≤70°C)...................................

100 mW

Package

Isolation Test Voltage

between emitter and detector .............................

2500 VACRMS

(refer to climate DIN 40046, part 2, Nov. 74)

Pollution Degree (DIN VDE0110) .................................................

2

Creepage ............................................................................

≥4 mm

Clearance............................................................................

≥4 mm

Comparative Tracking Index

per DIN IEC 112/VDE 0303, part 1 .......................................

175

Isolation Resistance

≥1012 Ω

VIO=500 V, TA=25°C, RISOL (Note 2) .............................

VIO=500 V, TA=100°C, RISOL(Note 2)............................

≥1011 Ω

Storage Temperature Range..............................

–55°C to +150°C

Ambient Temperature Range.............................

–55°C to +100°C

Junction Temperature ..........................................................

100°C

Soldering Temperature (t=10 sec. max.) .............................

260°C

Dip soldering: distance to seating plane ≥1.5 mm

Specifications subject to change.

Semiconductor Group

4–44

10.95

This document was created with FrameMaker 4.0.3

Electrical Characteristics

Over recommended temperature (TA=0°C to 70°C) unless otherwise specified. See note 6. *All typical values at TA=25°C.

Parameter	Sym-	Device	Min.	Typ.*	Max.	Units	Test Conditions				Note
	bol
Input Forward	VF			1.6	1.8	V	TA=25°C	IF=16 mA
Voltage
					1.9
Input Reverse	IR			0.5	10	A	VR=3 V
Current
Input Capacitance	CIN			75		pF	f=1 MHz, VF=0 V
Temperature	VF			–1.7		mV/°C	IF=16 mA
Coefficient of	----------
	TA
Forward Voltage
Logic Low Supply	ICCL			100		A	IF=16 mA, VO=Open, VCC=15 V
Current
Logic High Supply	ICCH			0.001	1	A	TA=25°C
Current								IF=0 mA, VO=Open, VCC=15 V
					2
Logic Low Output	VOL	SFH6315T			0.4		TA=25°C	IO=1.1 mA
Voltage				0.15		V
					0.5			IO=0.8 mA		IF=16 mA,
										VCC=4.5 V
		SFH6316T			0.4		TA=25°C	IO=3.0 mA
		SFH6343T		0.15		V
					0.5			IO=2.4 mA
Logic High Output	IOH			0.003	0.5		TA=25°C	VO=VCC=5.5 V
Current
				0.01	1	A	TA=25°C	VO=VCC=15.0 V		IF=0 mA
					50		TA=0–70°C	VO=VCC=15.0 V
Transistor DC	hFE			150			VO=5 V, IO=3 mA
Current Gain
Capacitance	CI-O			0.4		pF	f=1 MHz				6
(Input-Output)
Current Transfer Ra-	CTR	SFH6315T	7	16	50		TA=25°C	VO=0.4 V			1, 6
tio						%
			5	17				VO=0.5 V		IF=16 mA,
										VCC=4.5 V
		SFH6316T	19	35	50		TA=25°C	VO=0.4 V
		SFH6343T				%
			15	36				VO=0.5 V

Figure 1. Test circuit for switching times

IF
0			10% Duty Cycle
			1/f<100	µs		1	8	+5 V
VO		5 V
			Pulse
					IF	2	7
			Generator
	1.5 V	1.5 V	ZO=50	Ω				RL
			tr=5 ns
		VOL				3	6	VO
tPHL		tPLH					0.1	µF
			IF=Monitor
						4	5	CL=15pF
					Rm

SFH6315T/6316T/6343T

Semiconductor Group

4–45