Siemens SFH6315, SFH6316, SFH6343 Datasheet

W NE FEATURES

•Surface Mountable

•Industry Standard SOIC-8 Footprint

•Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes

•Isolation Voltage, 2500 VRMS

•Very High Common Mode Transient Immunity: 15000 V/µs at VCM=1500 V Guaranteed (SFH6343)

•High Speed: 1 Mb/s

•TTL Compatible

•Guaranteed AC and DC Performance Over Temperature: 0°C to 70°C

•Open Collector Output

•Pin Compatible with HP Optocouplers SFH6315—HCPL0500 SFH6316—HCPL0501 SFH6343—HCPL0453

APPLICATIONS

•Line Receivers

•Logic Ground Isolation

•Analog Signal Ground Isolation

•Replace Pulse Transformers

DESCRIPTION

The SFH6315/16/43, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open collector output function allows circuit designers to adjust the load conditions when interfacing with different logic systems such as TTL, CMOS, etc.

Because the SFH6343 has a Faraday shield on the detector chip, it can also reject and minimize high input to output common mode transient voltages. There is no base connection, further reducing the potential electrical noise entering the package.

The SFH6315/16/43 are packaged in industry standard SOIC-8 packages and are suitable for surface mounting.

Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage...........................................................	3 V
DC Forward Current................................................	25 mA
Surge Forward Current ................................................	1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation (TA≤70°C).........................	45 mW

SFH6315

SFH6316

SFH6343

HIGH SPEED OPTOCOUPLER

Package Dimensions in Inches (mm)

		NC 1	SFH6315/6		VCC
				8
.120±.002		A 2		7	Base VB
		K 3		6	C
(3.05±.05)		NC 4		5	E
	C .154±.002	NC 1	SFH6343		VCC
.240				8
(6.10)	L(3.91±.05)	A 2		7	NC
	.016	K 3		6	C
Pin 1		NC 4		5	E
	(.41)
				7°
			40°
.192±.005	.015±.002			.058±.005
(4.88±.13)	(.38±.05)			(1.49±.13)
.004 (.10)					.125±.005
.008 (.20)
	.008 (.20)		5°max.		(3.18±.13)
.050 (1.27) typ.			R.010		Lead
	.020±.004		(.25) max.		Coplanarity
.021 (.53)	(.15±.10)				±.0015 (.04)
	2 plcs.				max.

TOLERANCE: ± .005 (unless otherwise noted)

Absolute Maximum Ratings (continued)
Detector(Si Photodiode + Transistor)
Supply Voltage ............................................................	–0.5 to 30 V
Output Voltage ..........................................................	–0.5 to ≥20 V
Output Current.......................................................................	8 mA
Total Power Dissipation (TA≤70°C) ...................................	100 mW
Package
Isolation Test Voltage
between emitter and detector ..............................	2500 VACRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE0110) .................................................	2
Creepage ............................................................................	≥4 mm
Clearance............................................................................	≥4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................	175
Isolation Resistance	≥1012 Ω
VIO=500 V, TA=25°C, RISOL (Note 2)..............................
VIO=500 V, TA=100°C, RISOL(Note 2).............................	≥1011 Ω
Storage Temperature Range ..............................	–55°C to +150°C
Ambient Temperature Range .............................	–55°C to +100°C
Junction Temperature...........................................................	100°C
Soldering Temperature (t=10 sec. max.)..............................	260°C

Dip soldering: distance to seating plane ≥1.5 mm

Specifications subject to change.

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Electrical Characteristics

Over recommended temperature (TA=0°C to 70°C) unless otherwise specified. See note .6*All typical values at TA=25°C.

Parameter	Sym-	Device	Min.	Typ.*	Max.	Units	Test Conditions				Note
	bol
Input Forward	VF				1.8		TA=25°C	IF=16 mA
Voltage				1.6		V
					1.9
Input Reverse	IR			0.5	10	A	VR=3 V
Current
Input Capacitance	CIN			75		pF	f=1 MHz, VF=0 V
Temperature	VF			–1.7		mV/°C	IF=16 mA
Coefficient of	----------
	TA
Forward Voltage
Logic Low Supply	ICCL			100		A	IF=16 mA, VO=Open, VCC=15 V
Current
Logic High Supply	ICCH			0.001	1	A	TA=25°C
Current								IF=0 mA, VO=Open, VCC=15 V
					2
Logic Low Output	VOL	SFH6315			0.4		TA=25°C	IO=1.1 mA
Voltage				0.15		V
					0.5			IO=0.8 mA		IF=16 mA,
										VCC=4.5 V
		SFH6316			0.4		TA=25°C	IO=3.0 mA
		SFH6343		0.15		V
					0.5			IO=2.4 mA
Logic High Output	IOH			0.003	0.5		TA=25°C	VO=VCC=5.5 V
Current
				0.01	1	A	TA=25°C	VO=VCC=15.0 V		I =0 mA
										F
					50		TA=0–70°C	VO=VCC=15.0 V
Transistor DC	hFE			150			VO=5 V, IO=3 mA
Current Gain
Capacitance	CI-O			0.4		pF	f=1 MHz				6
(Input-Output)
Current Transfer Ra-	CTR	SFH6315	7	16	50		TA=25°C	VO=0.4 V			1, 6
tio						%
			5	17				VO=0.5 V		IF=16 mA,
										VCC=4.5 V
		SFH6316	19	35	50		TA=25°C	VO=0.4 V
		SFH6343				%
			15	36				VO=0.5 V

Figure 1. Test circuit for switching times

IF			10% Duty Cycle
0
			1/f<100	s			8
VO		5 V				1		+5 V
			Pulse
					IF	2	7
			Generator
	1.5 V	1.5 V	ZO=50	Ω				RL
			tr=5 ns
		VOL				3	6	VO
tPHL		tPLH					0.1	F
			IF=Monitor
						4	5	CL=15pF
					Rm

SFH6315/6316/6343

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