SFH 2540/FA
SFH 2545/FA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit |
SFH 2540/FA |
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Silicon PIN Photodiode with Very Short Switching Time |
SFH 2545/FA |
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Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 2540/2545) und bei 880 nm (SFH 2540 FA/2545 FA)
●Kurze Schaltzeit (typ. 5 ns)
●5 mm-Plastikbauform im LED-Gehäuse
●Auch gegurtet lieferbar
●Für Oberflächenmontage geeignet
Anwendungen
●Industrieelektronik
●“Messen/Steuern/Regeln”
●Schnelle Lichtschranken für Gleichund Wechsellichtbetrieb
Features
●Especially suitable for applications from 400 nm to 1100 nm (SFH 2540/2545) and of 880 nm (SFH 2540 FA/2545 FA)
●Short switching time (typ. 5 ns)
●5 mm LED plastic package
●Also available on tape
●Suitable for surface mounting
Applications
●Industrial electronics
●For control and drive circuits
●Photointerrupters
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Typ |
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Bestellnummer |
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Typ |
Bestellnummer |
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Type |
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Ordering Code |
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Type |
Ordering Code |
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SFH 2540 |
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Q |
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SFH 2540 FA |
Q62702-P1795 |
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SFH 2545 |
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Q |
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SFH 2545 FA |
Q |
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Semiconductor Group |
1 |
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07.96 |
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SFH 2540/FA |
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SFH 2545/FA |
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Grenzwerte |
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Maximum Ratings |
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Bezeichnung |
Symbol |
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Wert |
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Einheit |
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Description |
Symbol |
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Value |
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Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
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– 55 ... + 100 |
°C |
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Operating and storage temperature range |
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Löttemperatur (Lötstelle 2 mm vom |
TS |
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230 |
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°C |
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Gehäuse entfernt bei Lötzeit t ≤ 3 s) |
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Soldering temperature in 2 mm distance |
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from case bottom (t ≤ 3 s) |
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Sperrspannung |
VR |
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50 |
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V |
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Reverse voltage |
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Verlustleistung |
Ptot |
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100 |
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mW |
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Total power dissipation |
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Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
Symbol |
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Wert |
Einheit |
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Description |
Symbol |
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Value |
Unit |
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SFH 2540 |
SFH 2540 FA |
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SFH 2545 |
SFH 2545 FA |
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Fotoempfindlichkeit |
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Spectral sensitivity |
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100 (> 75) |
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VR = 5 V, Normlicht/standard light A, |
S |
– |
nA/Ix |
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T = 2856 K, |
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VR = 5 V, λ = 870 nm, Ee = 1 mW/cm2 |
S |
– |
70 (> 50) |
μA |
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Wellenlänge der max. Fotoempfindlichkeit |
λS max |
850 |
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900 |
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nm |
Wavelength of max. sensitivity |
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Spektraler Bereich der Fotoempfindlichkeit |
λ |
400 ... 1100 |
750 ... 1100 |
nm |
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S = 10 % von Smax |
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Spectral range of sensitivity |
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S = 10 % of Smax |
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Bestrahlungsempfindliche Fläche |
A |
1 |
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1 |
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mm2 |
Radiant sensitive area |
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Abmessung der bestrahlungsempfindlichen |
L × B |
1 × 1 |
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1 × 1 |
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mm×mm |
Fläche |
L × W |
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Dimensions of radiant sensitive area |
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Abstand Chipoberfläche zu Gehäuseober- |
H |
3.9 ... 4.4 |
3.9 ... 4.4 |
mm |
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fläche |
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Distance chip front to case surface |
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Semiconductor Group |
2 |
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