Siemens SFH480-2, SFH480-3, SFH481, SFH481-2, SFH482 Datasheet
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GaAlAs-IR-Lumineszenzdioden (880 nm)
GaAlAs Infrared Emitters (880 nm)
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Cathode (SFH 480) |
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Radiant |
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Anode |
(SFH 216, SFH 231, |
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Sensitive area |
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Chip position (2.7) |
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SFH 400) |
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.1 |
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1 |
.9 |
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ø0.45 |
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0 |
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ø4.8 ø4.6 |
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2.54mm spacing |
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1 |
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ø5.6 ø5.3 |
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0 |
1 |
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9 |
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5.3 |
14.5 |
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GEO06314 |
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5.0 |
12.5 |
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7.4 |
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6.6 |
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Approx. weight 0.5 g |
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Anode = SFH 481 |
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(2.7) |
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Cathode = SFH 401 |
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ø0.45 |
Chip position |
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.1 |
(package) |
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1 |
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.9 |
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mm2.54 spacing |
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ø4.8 ø4.6 |
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9 |
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welded |
5.3 |
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ø5.6 |
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glass |
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14.5 |
5.0 |
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ø5.3 |
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6.4 |
lens |
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GET06091 |
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12.5 |
5.6 |
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Approx. weight 0.35 g
5.5Radiant sensitive area
Chip position (2.7) |
5.0 |
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1 |
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1 |
.9 |
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ø0.45 |
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ø4.8 ø4.6 |
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2.54 |
spacing |
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14.5 |
5.3 |
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ø5.6 |
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12.5 |
5.0 |
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ø5.3 |
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Cathode (SFH 402, BPX 65) |
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GET06013 |
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Anode (SFH 482) |
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Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
SFH 480 SFH 481 SFH 482
fet06090
fet06091
fet06092
Semiconductor Group |
1 |
1998-04-16 |
SFH 480,
SFH 481, SFH 482
Wesentliche Merkmale
●Hergestellt im Schmezepitaxieverfahren
●Anode galvanisch mit dem Gehäuseboden verbunden
●Hohe Zuverlässigkeit
●Gute spektrale Anpassung an Si-Fotoempfänger
●Hermetisch dichtes Metallgehäuse
●SFH 480: Gehäusegleich mit SFH 216
●SFH 481: Gehäusegleich mit BPX 43, BPY 63
●SFH 482: Gehäusegleich mit BPX 38, BPX 65
Anwendungen
●Lichtschranken für Gleichund Wechsellichtbetrieb
●IR-Gerätefernsteuerungen
Features
●GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process
●Anode is electrically connected to the case
●High reliability
●Matches all Si-Photodetectors
●Hermetically sealed package
●SFH 480: Same package as SFH 216
●SFH 481: Same package as BPX 43, BPY 63
●SFH 482: Same package as BPX 38, BPX 65
Applications
●Photointerrupters
●IR remote control of various equipmet
Typ |
Bestellnummer |
Gehäuse |
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Type |
Ordering Code |
Package |
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SFH 480-2 |
Q62703-Q1662 |
18 A3 DIN 41876 (TO-18), Anschlüsse im 2.54-mm- |
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Raster (1/10’’), Kathodenkennzeichnung: Nase am Ge- |
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SFH 480-3 |
Q62703-Q1663 |
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häuseboden |
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SFH 481 |
Q62703-Q1088 |
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18 A3 DIN 41876 (TO-18), lead spacing 2.54 mm |
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SFH 481-1 |
Q62703-Q1664 |
(1/10’’), cathode marking: projection at package |
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SFH 481-2 |
Q62703-Q1665 |
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SFH 482 |
Q62703-Q1089 |
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SFH 482-1 |
Q62703-Q1667 |
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SFH 482-2 |
Q62703-Q1668 |
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SFH 482-3 |
Q62703-Q1669 |
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SFH 482-M E7800 |
Q62703-Q2186 |
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Semiconductor Group |
2 |
1998-04-16 |
SFH 480,
SFH 481, SFH 482
Grenzwerte (TC = 25 °C)
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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SFH 481: |
Top; Tstg |
– 55 ... + 100 |
°C |
Betriebsund Lagertemperatur |
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Operating and storage temperature range |
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SFH 480, SFH 482: |
Top; Tstg |
– 55 ... + 125 |
°C |
Betriebsund Lagertemperatur |
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Operating and storage temperature range |
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Sperrschichttemperatur |
Tj |
100 |
°C |
Junction temperature |
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Sperrspannung |
VR |
5 |
V |
Reverse voltage |
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Durchlaßstrom |
IF |
200 |
mA |
Forward current |
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Stoßstrom, tp = 10 µs, D = 0 |
IFSM |
2.5 |
A |
Surge current |
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Verlustleistung |
Ptot |
470 |
mW |
Power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
RthJC |
160 |
K/W |
Kennwerte (TA = 25 °C) |
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Characteristics |
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Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Wellenlänge der Strahlung |
λpeak |
880 |
nm |
Wavelength at peak emission |
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IF = 100 mA |
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Spektrale Bandbreite bei 50 % von Imax |
Δλ |
80 |
nm |
Spectral bandwidth at 50 % of Imax |
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IF = 100 mA |
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Abstrahlwinkel |
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Half angle |
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SFH 480 |
ϕ |
± 6 |
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SFH 481 |
ϕ |
± 15 |
Grad |
SFH 482 |
ϕ |
± 30 |
deg. |
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Aktive Chipfläche |
A |
0.16 |
mm2 |
Active chip area |
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Semiconductor Group |
3 |
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1998-04-16 |
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