SGS Thomson Microelectronics TLC386T, TLC386D, TLC386S, TLC386A, TLC336D Datasheet
...
.FEATURES
.VERY LOW IGT = 5mA max LOW IH = 15mA max
TLC116 ---> TLC386 T/D/S/A
SENSITIVE GATE TRIACS
DESCRIPTION
The TLC116 ---> TLC386 T/D/S/A triac family uses a high performance glass passivated PNPN technology.
These parts are suitable for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static
ABSOLUTE RATINGS (limiting values)
A1
A2
G
TL (Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM VRRM
Parameter |
|
Value |
Unit |
|
RMS on-state current |
Tl = 40°C |
|
3 |
A |
(360° conduction angle) |
Ta = 25°C |
1.3 |
(1) |
|
|
|
|||
Non repetitive surge peak on-state current |
tp = 8.3 ms |
31.5 |
A |
|
( Tj initial = 25°C ) |
tp = 10 ms |
|
30 |
|
|
|
|
||
I2t value |
tp = 10 ms |
4.5 |
A2s |
|
Critical rate of rise of on-state current |
Repetitive |
|
10 |
A/μs |
Gate supply : IG = 50mA diG/dt = 0.1A/μs |
F = 50 Hz |
|
|
|
|
Non |
|
50 |
|
|
Repetitive |
|
|
|
Storage and operating junction temperature range |
- |
40 |
to + 150 |
°C |
|
- |
40 |
to + 110 |
°C |
Maximum lead temperature for soldering during 4 s at 4.5 mm |
230 |
°C |
||
from case |
|
|
|
|
|
Parameter |
|
TLC |
|
Unit |
|
|
|
116 T/D/S/A |
226 T/D/S/A |
336 T/D/S/A |
386 T/D/S/A |
|
Repetitive peak off-state |
200 |
400 |
600 |
700 |
V |
|
voltage |
Tj = 110°C |
|
|
|
|
|
(1) With Cu surface 1cm2.
February 1999 Ed: 1A |
1/5 |
TLC116 T/D/S/A ---> TLC386 T/D/S/A
THERMAL RESISTANCES
Symbol |
Parameter |
Value |
Unit |
Rth (j-a) |
2 |
50 |
° |
Junction to ambient on printed circuit with Cu surface 1cm |
C/W |
||
Rth (j-l) DC |
Junction leads for DC |
20 |
°C/W |
Rth (j-l) AC |
Junction leads for 360° conduction angle ( F= 50 Hz) |
15 |
°C/W |
GATE CHARACTERISTICS (maximum values)
PG (AV) = 0.1W PGM = 2W (tp = 20 μs) IGM = 1A (tp = 20 μs) VGM = 16V (tp = 20 μs).
ELECTRICAL CHARACTERISTICS
Symbol |
|
Test Conditions |
|
Quadrant |
|
|
Suffix |
|
Unit |
|||
|
|
|
|
|
|
|
|
T |
D |
S |
A |
|
IGT |
VD=12V |
(DC) |
RL=33Ω |
Tj=25°C |
I-II-III |
MAX |
5 |
5 |
10 |
10 |
mA |
|
|
|
|
|
|
|
IV |
MAX |
5 |
10 |
10 |
25 |
|
VGT |
VD=12V |
(DC) RL=33Ω |
Tj=25°C |
I-II-III-IV |
MAX |
|
|
1.5 |
|
V |
||
VGD |
VD=VDRM RL=3.3kΩ |
Tj=110°C |
I-II-III-IV |
MIN |
|
|
0.2 |
|
V |
|||
tgt |
|
VD=VDRM IG = 40mA |
Tj=25°C |
I-II-III-IV |
TYP |
|
|
2 |
|
μs |
||
|
|
dIG/dt = 0.5A/μs |
|
|
|
|
|
|
|
|
|
|
IL |
|
IG= 1.2 IGT |
|
Tj=25°C |
I-III-IV |
MAX |
15 |
15 |
25 |
25 |
mA |
|
|
|
|
|
|
|
II |
|
15 |
15 |
25 |
25 |
|
IH |
* |
IT= 100mA gate open |
Tj=25°C |
|
MAX |
15 |
15 |
25 |
25 |
mA |
||
VTM |
* |
ITM= 4A |
tp= 380μs |
Tj=25°C |
|
MAX |
|
|
1.85 |
|
V |
|
IDRM |
VDRM |
Rated |
|
Tj=25°C |
|
MAX |
|
|
0.01 |
|
mA |
|
IRRM |
VRRM |
Rated |
|
Tj=110°C |
|
MAX |
|
|
0.75 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
dV/dt |
* |
Linear |
slope |
up to |
Tj=110°C |
|
TYP |
10 |
10 |
20 |
20 |
V/μs |
|
|
VD=67%VDRM |
|
|
|
|
|
|
|
|
|
|
|
|
gate open |
|
|
|
|
|
|
|
|
|
|
(dV/dt)c * |
(dI/dt)c = 1.3A/ms |
|
Tj=110°C |
|
TYP |
1 |
1 |
5 |
5 |
V/μs |
||
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
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