SGS Thomson Microelectronics TN815-800B, TN815-700B, TN815-600B, TN815-400B, TN805-800B Datasheet

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SGS Thomson Microelectronics TN815-800B, TN815-700B, TN815-600B, TN815-400B, TN805-800B Datasheet

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TN805/TN815-B

 

 

SCR’s

FEATURES

ITRMS = 8 A

VDRM = 400 V to 800 V

IGT 5 mA and 15 mA

DESCRIPTION

The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology.

These parts are intended for general purpose applications using mount technology.

ABSOLUTE MAXIMUM RATINGS

A

G

A

K

DPAK

Symbol

 

Parameter

 

Value

Unit

 

 

 

 

 

IT(RMS)

RMS on-state current

Tc= 105°C

8

A

 

(180° conduction angle)

 

 

 

 

 

 

 

 

IT(AV)

Mean on-state current

Tc= 105°C

5

A

 

(180° conduction angle)

 

 

 

 

 

 

 

 

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

73

A

 

(Tj initial = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

tp = 10 ms

70

 

 

 

 

 

 

I2t

I2t Value for fusing

tp = 10ms

24.5

A2s

dI/dt

Critical rate of rise of on-state current

 

100

A/μs

 

IG = 100 mA

dIG /dt = 1 A/μs.

 

 

 

 

 

 

 

 

Tstg

Storage junction temperature range

 

- 40 to + 150

°C

Tj

Operating junction temperature range

 

- 40 to + 125

 

 

 

 

 

Tl

Maximum lead temperature for soldering during 10s

260

°C

 

 

 

 

 

 

Symbol

Parameter

 

TN805 or TN815

 

Unit

 

 

 

 

400B

600B

700B

800B

 

 

 

 

 

 

 

 

 

 

VDRM

Repetitive peak-off voltage

400

600

700

800

V

VRRM

Tj = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

August 1998 - Ed: 1A

 

 

 

 

1/5

 

 

 

 

 

 

 

TN805/TN815-B

THERMAL RESISTANCES

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

Rth(j-a)

Junction to ambient (S=0.5cm2)

 

70

°C/W

Rth(j-c)

Junction to case for D.C

 

2.5

°C/W

 

 

 

 

 

GATE CHARACTERISTICS

 

 

 

PG (AV)= 1W

PGM = 10 W (tp = 20 μs) IGM = 4 A (tp = 20 μs)

VRGM = 5 V

 

ELECTRICAL CHARACTERISTICS

Symbol

 

 

 

Test Conditions

 

Type

Value

Unit

 

 

 

 

 

 

 

 

 

 

 

TN805

 

TN815

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IGT

VD = 12V (DC)

RL= 33Ω

Tj= 25°C

MAX

5

 

15

μA

 

 

 

 

 

 

 

 

 

VGT

VD = 12V (DC)

RL= 33Ω

Tj= 25°C

MAX

1.5

 

V

 

 

 

 

 

 

 

 

 

VGD

VD = VDRM

RL = 3.3kΩ

Tj= 125°C

MIN

0.2

 

V

 

 

 

 

 

 

 

 

 

 

tgt

VD = VDRM

 

ITM = 3 x IT(AV)

Tj= 25°C

TYP

2

 

μs

 

IG = 40mA

 

dIG/dt = 0.5A/us

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IH

IT= 150mA

Gate open

Tj= 25°C

MAX

25

 

30

mA

 

 

 

 

 

 

 

 

 

 

IL

IG = 1.2 IGT

 

 

Tj= 25°C

MAX

25

 

30

mA

 

 

 

 

 

 

 

 

VTM

ITM= 16A tp= 380μs

Tj= 25°C

MAX

1.6

 

V

 

 

 

 

 

 

 

 

 

 

IDRM

VDRM

Rated

 

Tj= 25°C

MAX

10

 

μA

 

 

 

 

 

 

 

 

 

 

IRRM

VRRM

Rated

 

Tj = 125°C

MAX

2

 

mA

 

 

 

 

 

 

 

 

dV/dt

Linear slope up to

Tj= 125°C

MIN

50

 

150

V/μs

 

VD=67%VDRM Gate open

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ORDERING INFORMATION

 

TN

8 05 - 600

B

 

 

 

 

 

 

 

 

 

 

PACKAGES :

SCR

 

 

 

 

 

 

 

 

B: DPAK

CURRENT

 

 

 

 

 

 

 

VDRM / VRRM

 

 

 

SENSITIVITY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2/5

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