SGS Thomson Microelectronics VN820SP13TR, VN820SP, VN820SO, VN820PT13TR, VN820PT Datasheet

		VN820 / VN820SO
®	/ VN820SP	/ VN820-B5 / VN820PT
		HIGH SIDE DRIVER

TYPE	RDS(on)	IOUT	VCC
VN820
VN820SP
VN820-B5	40 mΩ	9 A	36 V
VN820SO
VN820PT

■CMOS COMPATIBLE INPUT

■ON STATE OPEN LOAD DETECTION

■OFF STATE OPEN LOAD DETECTION

■SHORTED LOAD PROTECTION

■UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN

■PROTECTION AGAINST LOSS OF GROUND

■VERY LOW STAND-BY CURRENT

■REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN820, VN820SP, VN820-B5, VN820SO, VN820PT are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground.

Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient

BLOCK DIAGRAM

10
1
PowerSO-10™	P2PAK	PPAK

PENTAWATT					SO-16L
		ORDER CODES
PACKAGE				TUBE		T&R
PENTAWATT				VN820		-
PowerSO-10™				VN820SP		VN820SP13TR
P2PAK				VN820-B5		VN820-B513TR
SO-16L				VN820SO		VN820SO13TR
PPAK				VN820PT		VN820PT13TR

compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload.

The device detects open load condition both is on and off state. Output shorted to VCC is detected in

the off state. Device automatically turns off in case of ground pin disconnection.

VCC

VCC		OVERVOLTAGE
CLAMP		DETECTION
		UNDERVOLTAGE
		DETECTION
GND
		Power CLAMP
INPUT		DRIVER
		OUTPUT
	LOGIC
		CURRENT LIMITER
STATUS		ON STATE OPENLOAD
		DETECTION
OVERTEMPERATURE		OFF STATE OPENLOAD
DETECTION
		AND OUTPUT SHORTED TO VCC
		DETECTION

(*) See application schematic at page 9

June 2003

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ABSOLUTE MAXIMUM RATING

Symbol	Parameter			Value					Unit
			PowerSO-10™	PENTAWATT	P2PAK		SO-16L	PPAK
VCC	DC Supply Voltage			41					V
- VCC	Reverse DC Supply Voltage			- 0.3					V
- IGND	DC Reverse Ground Pin Current			- 200					mA
IOUT	DC Output Current			Internally Limited					A
- IOUT	Reverse DC Output Current			- 9					A
IIN	DC Input Current			+/- 10					mA
ISTAT	DC Status Current			+/- 10					mA
	Electrostatic Discharge
	(Human Body Model: R=1.5KΩ; C=100pF)
VESD	- INPUT			4000					V
	- STATUS			4000					V
	- OUTPUT			5000					V
	- VCC			5000					V
EMAX	Maximum Switching Energy (L=4mH; RL=0Ω;		481			481			mJ
	Vbat=13.5V; Tjstart=150ºC; IL=13A)
EMAX	Maximum Switching Energy (L=3.7mH;						438		mJ
	RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=13A)
EMAX	Maximum Switching Energy (L=4.48mH;							526	mJ
	RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=13A)
Ptot	Power Dissipation TC=25°C		65.8	65.8		65.8	8.3	65.8	W
Tj	Junction Operating Temperature			Internally Limited					°C
Tc	Case Operating Temperature			- 40 to 150					°C
Tstg	Storage Temperature			- 55 to 150					°C

CONNECTION DIAGRAM (TOP VIEW)

GROUND	6	5
INPUT	7	4
STATUS	8	3
N.C.	9	2
N.C.	10	1
		11
	VCC
	PowerSO-10™

	VCC	1	16	VCC
	N.C.			OUTPUT
OUTPUT	GND			OUTPUT
OUTPUT
	INPUT			OUTPUT
N.C.
OUTPUT	STATUS			OUTPUT
OUTPUT
	N.C.			OUTPUT
PPAK / P2PAK / PENTAWATT	N.C.			OUTPUT
	VCC	8	9	VCC

SO-16L

CURRENT AND VOLTAGE CONVENTIONS

IS

IIN

VCC

INPUT

ISTAT

IOUT

STATUS

OUTPUT

VCC

GND

VIN

VOUT

VSTAT

IGND

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

THERMAL DATA

Symbol	Parameter				Value				Unit
				PowerSO-10™	PENTAWATT	P2PAK	SO-16L	PPAK
Rthj-case	Thermal Resistance Junction-case	Max		1.9	1.9	1.9	-	1.9	°C/W
Rthj-lead	Thermal Resistance Junction-lead	Max		-	-	-	15	-	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max			51.9 (*)	61.9 (*)	51.9 (*)	65 (**)	76.9 (*)	°C/W

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35μm thick).
(**) When mounted on FR4 printed circuit board with 0.5cm2 of Cu (at least 35μ thick) connected to all V						CC		pins.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C <Tj<150°C unless otherwise specified)
POWER
Symbol	Parameter	Test Conditions			Min			Typ	Max	Unit
VCC	Operating Supply Voltage				5.5			13	36	V
VUSD	Undervoltage Shut-down				3			4	5.5	V
VUSDhyst	Undervoltage Shut-down							0.5		V
	hysteresis
VOV	Overvoltage Shut-down				36					V
RON	On State Resistance	IOUT=3A; Tj=25°C; V CC>8V							40	mΩ
		IOUT=3A; VCC>8V							80	mΩ
		Off State; VCC=13V; VIN=VOUT=0V						10	25	μA
IS	Supply Current	Off State; VCC=13V; VIN=VOUT=0V;
		Tj=25°C						10	20	μA
		On State; VCC=13V; VIN=5V; IOUT=0A						2	3.5	mA
IL(off1)	Off State Output Current	VIN=VOUT=0V			0				50	μA
IL(off2)	Off State Output Current	VIN=0V; VOUT=3.5V			-75				0	μA
IL(off3)	Off State Output Current	VIN=VOUT=0V; Vcc=13V; Tj =125°C							5	μA
IL(off4)	Off State Output Current	VIN=VOUT=0V; Vcc=13V; Tj =25°C							3	μA
SWITCHING (VCC=13V)
Symbol	Parameter	Test Conditions			Min			Typ	Max	Unit
td(on)	Turn-on Delay Time	RL=4.3Ω from VIN rising edge to						30		μs
		VOUT=1.3V
td(off)	Turn-off Delay Time	RL=4.3Ω from VIN falling edge to						30		μs
		VOUT=11.7V
		RL=4.3Ω from VOUT=1.3 to						See
dVOUT/dt(on)	Turn-on Voltage Slope							relative		V/μs
		VOUT=10.4V
								diagram
		RL=4.3Ω from VOUT=11.7 to						See		V/μs
dVOUT/dt(off)	Turn-off Voltage Slope							relative
		VOUT=1.3V
								diagram
INPUT PIN
Symbol	Parameter	Test Conditions			Min			Typ	Max	Unit
VIL	Input Low Level								1.25	V
IIL	Low Level Input Current	VIN=1.25V			1					μA
VIH	Input High Level				3.25					V
IIH	High Level Input Current	VIN=3.25V							10	μA
VI(hyst)	Input Hysteresis Voltage				0.5					V
VICL	Input Clamp Voltage	IIN=1mA			6			6.8	8	V
		IIN=-1mA						-0.7		V
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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VSTAT	Status Low Output Voltage	ISTAT=1.6mA			0.5	V
ILSTAT	Status Leakage Current	Normal Operation VSTAT=5V			10	μA
CSTAT	Status Pin Input	Normal Operation VSTAT=5V			100	pF
	Capacitance
VSCL	Status Clamp Voltage	ISTAT=1mA	6	6.8	8	V
		ISTAT=-1mA		-0.7		V

PROTECTIONS

	Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
	TTSD	Shut-down Temperature		150	175	200	°C
	TR	Reset Temperature		135			°C
	Thyst	Thermal Hysteresis		7	15		°C
	tSDL	Status delay in overload	Tj>TTSD			20	μs
		condition
	Ilim	Current limitation		9	13	20	A
			5.5V<VCC<36V			20	A
	Vdemag	Turn-off Output Clamp	IOUT=3A; VIN=0V; L=6mH	VCC-41	VCC-48	VCC-55	V
		Voltage

OPENLOAD DETECTION

	Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
	IOL	Openload ON State	VIN=5V	70	150	300	mA
		Detection Threshold
	tDOL(on)	Openload ON State	IOUT=0A			200	μs
		Detection Delay
		Openload OFF State
	VOL	Voltage Detection	VIN=0V	1.5	2.5	3.5	V
		Threshold
	tDOL(off)	Openload Detection Delay				1000	μs
		at Turn Off

OPEN LOAD STATUS TIMING (with external pull-up)

OVERTEMP STATUS TIMING

V

OUT

> V

OL

IOUT< IOL

VIN

Tj > TTSD

VIN

VSTAT

VSTAT

tDOL(off)	t	DOL(on)		t		t	SDL
				SDL

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		VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT
Switching time Waveforms
VOUT
		90%
	80%
	dVOUT/dt(on)	dVOUT/dt(off)
		10%
		t
VIN	td(on)	t
		d(off)

t

TRUTH TABLE

	CONDITIONS	INPUT	OUTPUT	STATUS
	Normal Operation	L	L	H
		H	H	H
		L	L	H
	Current Limitation	H	X	(Tj < TTSD) H
		H	X	(Tj > TTSD) L
	Overtemperature	L	L	H
		H	L	L
	Undervoltage	L	L	X
		H	L	X
	Overvoltage	L	L	H
		H	L	H
	Output Voltage > VOL	L	H	L
		H	H	H
	Output Current < IOL	L	L	H
		H	H	L

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

OPEN LOAD DETECTION IN OFF STATE

Off state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor.

The external resistor has to be selected according to the following requirements:

1)no false open load indication when load is connected: in this case we have to avoid VOUT to be higher than

VOlmin; this results in the following condition VOUT=(VPU/(RL+RPU))RL<VOlmin.

2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU<(VPU–VOLmax)/

IL(off2).

Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby.

The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section.

Open Load detection in off state

	V batt.	VPU
	VCC
		RPU
INPUT	DRIVER	IL(off2)
	+
	LOGIC
		OUT
	+
	R
STATUS	-
	V
	OL	R
		L
	GROUND

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1				TEST LEVELS
Test Pulse		I	II	III	IV	Delays and
						Impedance
1		-25 V	-50 V	-75 V	-100 V	2 ms 10 Ω
2		+25 V	+50 V	+75 V	+100 V	0.2 ms 10 Ω
3a		-25 V	-50 V	-100 V	-150 V	0.1 μs 50 Ω
3b		+25 V	+50 V	+75 V	+100 V	0.1 μs 50 Ω
4		-4 V	-5 V	-6 V	-7 V	100 ms, 0.01 Ω
5		+26.5 V	+46.5 V	+66.5 V	+86.5 V	400 ms, 2 Ω

ISO T/R 7637/1			TEST LEVELS RESULTS
Test Pulse		I	II	III	IV
1		C	C	C	C
2		C	C	C	C
3a		C	C	C	C
3b		C	C	C	C
4		C	C	C	C
5		C	E	E	E

CLASS	CONTENTS
C	All functions of the device are performed as designed after exposure to disturbance.

EOne or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Figure 1: Waveforms

NORMAL OPERATION

INPUT

LOAD VOLTAGE

STATUS

UNDERVOLTAGE

VCC

VUSDhyst

INPUT

V

USD

LOAD VOLTAGE

STATUS

undefined

OVERVOLTAGE

VCC<VOV

VCC>VOV

VCC

INPUT

LOAD VOLTAGE

STATUS

OPEN LOAD with external pull-up

INPUT

VOUT>VOL

LOAD VOLTAGE

VOL

STATUS

OPEN LOAD without external pull-up

INPUT

LOAD VOLTAGE

STATUS

OVERTEMPERATURE

Tj

TTSD

TR

INPUT

LOAD CURRENT

STATUS

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

APPLICATION SCHEMATIC

+5V		+5V
	R		VCC
	prot
		STATUS
			Dld
μC	Rprot	INPUT
			OUTPUT
			GND
		VGND	RGND
			DGND

GND PROTECTION NETWORK AGAINST REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load.

The following is an indication on how to dimension the RGND resistor.

1)RGND £ 600mV / (IS(on)max).

2)RGND ³ (-VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the of

the device’s datasheet.

Power Dissipation in RGND (when VCC<0: during reverse battery situations) is:

PD= (-VCC)2/RGND

This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be

calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not common with the device ground then the RGND will

produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary

depending on many devices are ON in the case of several high side drivers sharing the same RGND.

If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggest to utilize Solution 2 (see below).

Solution 2: A diode (DGND) in the ground line.

A resistor (RGND=1kW) should be inserted in parallel to DGND if the device will be driving an inductive load.

This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.

μC I/Os PROTECTION:

If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the mC I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage current of mC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of mC I/Os.

-VCCpeak/Ilatchup £ Rprot £ (VOHμC-VIH-VGND) / IIHmax

Calculation example:

For VCCpeak= - 100V and Ilatchup ³ 20mA; VOHμC ³ 4.5V 5kW £ Rprot £ 65kW.

Recommended Rprot value is 10kW.

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VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Off State Output Current

IL(off1) (µA)
5
4.5		Off state
4		Vcc=36V
3.5		Vin=Vout=0V
3
2.5
2
1.5
1
0.5
0
-50	-25	0	25	50	75	100	125	150	175

Tc (ºC)

Input Clamp Voltage

Vicl (V)

8
7.8
7.6		Iin=1mA
7.4
7.2
7
6.8
6.6
6.4
6.2
6
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

Input Low Level

Vil (V)

2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

10/34

High Level Input Current

Iih (uA)

5
4.5
4	Vin=3.25V
3.5
3
2.5
2
1.5
1
0.5
0
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

Input High Level

Vih (V)

3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

Input Hysteresis Voltage

Vhyst (V)

1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Overvoltage Shutdown

Vov (V)

50
48
46
44
42
40
38
36
34
32
30
-50	-25	0	25	50	75	100	125	150	175

Tc (°C)

Turn-on Voltage Slope

dVout/dt(on) (V/ms)
1000
900
800		Vcc=13V
	Rl=4.3Ohm
700
600
500
400
300
200
100
0
-50	-25	0	25	50	75	100	125	150	175

Tc (ºC)

On State Resistance Vs Tcase

Ron (mOhm)

100
90
80		Iout=3A
	Vcc=8V; 13V; 36V
70
60
50
40
30
20
10
0
-50	-25	0	25	50	75	100	125	150	175

Tc (ºC)

ILIM Vs Tcase

Ilim (A)

25
22.5
20		Vcc=13V
17.5
15
12.5
10
7.5
5
2.5
0
-50	-25	0	25	50	75	100	125	150	175

Tc (ºC)

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
1000
900
800		Vcc=13V
	Rl=4.3Ohm
700
600
500
400
300
200
100
0
-50	-25	0	25	50	75	100	125	150	175

Tc (ºC)

On State Resistance Vs VCC

Ron (mOhm)

100

90

80

Tc= 150ºC

70

60

50

Tc= 25ºC

40

30

Tc= - 40ºC

20

10

0

5

10

15

20

25

30

35

40

Vcc (V)

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