SGS Thomson Microelectronics VIPER20SP, VIPER20DIP, VIPER20ASP, VIPER20ADIP, VIPER20A Datasheet

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T YPE

VDSS

In

RDS(on)

VIPer20/SP/DIP

620V

0.5 A

16 Ω

VIPer20A/ASP/ADIP

700V

0.5 A

18 Ω

VIPer20/SP/DIP

VIPer20A/ASP/ADIP

SMPS PRIMARY I.C.

FEATURE

ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ

CURRENT MODE CONTROL

SOFT START AND SHUT DOWN CONTROL

AUTOMATIC BURST MODE OPERATION IN STAND-BY CONDITION ABLE TO MEET ºBLUE ANGELº NORM (<1W TOTAL POWER CONSUMPTION)

INTERNALLY TRIMMED ZENER REFERENCE

UNDERVOLTAGE LOCK-OUT WITH HYSTERESIS

INTEGRATED START-UP SUPPLY

AVALANCHE RUGGED

OVERTEMPERATURE PROTECTION

LOW STAND-BY CURRENT

ADJUSTABLE CURRENT LIMITATION

DESCRIPTION

VIPer20/20A, made using VIPower M0

BLOCK DIAGRAM

 

ON/OFF

 

 

 

SECURITY

 

 

LATCH

VDD

UVLO

R/S FF Q

LOGIC

 

 

S

 

 

OVERTEMP.

 

 

DETECTOR

 

0.5 V +

1.7

 

_

μs

 

delay

 

 

 

ERROR

 

 

AMPLIFIER

 

 

_

 

 

13 V +

 

 

4.5V

 

PENTAWATT HV

PENTAWATT HV (022Y)

 

10

 

1

 

PowerSO-10

DIP-8

Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A).

Typical applications cover off line power supplies with a secondary power capability of 10W in wide range condition and 20W in single range or with doubler configuration. It is compatible from both primary or secondary regulation loop despite using around 50% less components when compared with a discrete solution. Burst mode operation is an additional feature of this device, offering the possibility to operate in stand-by mode without extra components.

OSC

 

 

 

DRAIN

 

OSCILLATOR

 

 

 

 

 

PWM

 

 

 

 

 

 

LATCH

 

 

 

 

 

 

 

S

 

 

 

 

 

R1 FF Q

 

 

 

 

 

R2

R3

 

 

 

 

 

 

 

 

0.5V

 

 

 

 

+

+

_

6 V/A

 

 

250 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

Blanking

_

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

AMPLIFIER

 

COMP

 

 

 

SOURCE

FC00491

 

 

 

 

November 1999

1/21

SGS Thomson Microelectronics VIPER20SP, VIPER20DIP, VIPER20ASP, VIPER20ADIP, VIPER20A Datasheet

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

ABSOLUTE MAXIMUM RATING

Symb ol

Parameter

Value

Uni t

VDS

Continuous Drain-Source Voltage (Tj = 25 to 125oC)

 

 

 

for VIPer20/SP/ DIP

-0.3 to 620

V

 

for VIPer20A/ ASP/ADIP

-0.3 to 700

V

ID

Maximum Current

Internally Limited

A

VDD

Supply Voltage

0 to 15

V

VOSC

Voltage Range Input

0 to VDD

V

VCOMP

Voltage Range Input

0 to 5

V

ICOMP

Maximum Continuous Current

±2

mA

Vesd

Electrostatic discharge (R = 1.5 KΩ C = 100pF)

4000

V

ID(AR)

Avalanche Drain-Source Current, Repetitive or Not-Repetitive

 

 

 

(TC = 100 oC, Pulse Width Limited by TJ max, δ <1%)

0.5

A

 

for VIPer20/SP

 

for VIPer20A/ ASP/ADIP

0.4

A

Ptot

Power Dissipation at Tc = 25oC

57

W

Tj

Junction Operating Temperature

Internally Limited

oC

Ts tg

Storage Temperature

-65 to 150

oC

THERMAL DATA

 

 

 

 

PENT AW ATT PowerSO-10

DIP-8

 

Rthj-p in

 

 

 

 

 

20

oC/W

Rt hj-ca se

Thermal

Resistance Junction-case

Max

2.0

2.0

 

oC/W

Rth j-a mb.

Thermal

Resistance Ambient-case

Max

70

60

35 #

oC/W

(*) When mounted using the minimum recommended pad size on FR-4 board.

 

 

 

# On multylayer PCB

 

 

 

 

 

 

CONNECTION DIAGRAMS (Top View)

 

 

 

 

 

PENTAWATT HV PENTAWATT HV (022Y)

PowerSO-10

DIP-8

 

 

 

 

OS C

1

8

DRAIN

 

 

Vdd

 

 

DRAIN

 

 

SOURC E

 

 

DRAIN

 

 

COMP

4

5

DRAIN

 

 

 

 

SC 10540

 

CURRENT AND VOLTAGE CONVENTIONS

 

 

 

 

IDD

 

ID

 

 

 

VDD

DRAIN

 

 

 

 

IOSC

-

 

 

 

 

OSC

+

 

 

 

 

13V

 

 

 

 

VDD

COMP SOURCE

 

 

 

 

VDS

ICOMP

VOSC

VCOMP

FC00020

2/21

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

ORDERING NUMBERS

PENTAW AT T HV

PENT AW ATT HV (022Y)

PowerSO-10

DIP -8

VIPer20

VIPer20 (022Y)

VIPer20SP

VIPer20DIP

VIPer20A

VIPer20A (022Y)

VIPer20ASP

VIPer20ADIP

PINS FUNCTIONAL DESCRIPTION

DRAIN PIN:

Integrated power MOSFET drain pin. It provides internal bias current during start-up via an integrated high voltage current source which is switched off during normal operation. The device is able to handle an unclamped current during its normal operation, assuring self protection against voltage surges, PCB stray inductance, and allowing a snubberless operation for low output power.

SOURCE PIN:

Power MOSFET source pin. Primary side circuit common ground connection.

VDD PIN :

This pin provides two functions :

-It corresponds to the low voltage supply of the control part of the circuit. If VDD goes below 8V, the start-up current source is activated and the output power MOSFET is switched off until the VDD voltage reaches 11V. During this phase, the internal current consumption is reduced, the VDD pin is sourcing a current of about 2mA and the COMP pin is shorted to ground. After that, the current source is shut down, and the device tries to start up by switching again.

-This pin is also connected to the error amplifier, in order to allow primary as well as secondary regulation configurations. In case of primary regulation, an internal 13V trimmed reference voltage is used to maintain VDD at 13V. For secondary regulation, a voltage between 8.5V and 12.5V will be put on VDD pin by transformer design, in order to stuck the output of the transconductance amplifier to the high state. The COMP pin behaves as a

constant current source, and can easily be connected to the output of an optocoupler. Note that any overvoltage due to regulation loop failure is still detected by the error amplifier through the VDD voltage, which cannot overpass 13V. The output voltage will be somewhat higher than the nominal one, but still under control.

COMP PIN :

This pin provides two functions :

-It is the output of the error transconductance amplifier, and allows for the connection of a compensation network to provide the desired transfer function of the regulation loop. Its bandwidth can be easily adjusted to the needed value with usual components value. As stated above, secondary regulation configurations are also implemented through the COMP pin.

-When the COMP voltage is going below 0.5V, the shut-down of the circuit occurs, with a zero duty cycle for the power MOSFET. This feature can be used to switch off the converter, and is automatically activated by the regulation loop (whatever is the configuration) to provide a burst mode operation in case of negligible output power or open load condition.

OSC PIN :

An RT-CT network must be connected on that pin to define the switching frequency. Note that despite the connection of RT to VDD, no significant frequency change occurs for VDD varying from 8V to 15V. It provides also a synchronisation capability, when connected to an external frequency source.

3/21

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max

Valu e

Uni t

ID(a r)

Avalanche Current, Repetitive or Not-Repetitive

 

 

 

(pulse width limited by Tj max, δ < 1%)

 

0.5

A

 

for VIPer20/SP/ DIP

 

 

for VIPer20A/ ASPA/ DIP

(see fig.12)

0.4

A

E(ar)

Single Pulse Avalanche Energy

 

10

mJ

 

(starting Tj = 25 oC, ID = ID(ar))

(see fig.12)

 

 

ELECTRICAL CHARACTERISTICS (TJ = 25 oC,

VDD = 13 V, unless otherwise specified)

 

POWER SECTION

 

 

 

 

 

 

Symb ol

Parameter

T est Con ditio ns

Mi n.

Typ .

Max.

Un it

BVDSS

Drain-Source Voltage

ID = 1 mA

VCOMP = 0 V

 

 

 

 

 

 

for VIPer20/SP/DIP

620

 

 

V

 

 

for VIPer20A/ASP/DI P (see fig.5)

700

 

 

V

IDSS

Off-State Drain Current

VCOMP = 0 V

TJ= 125 oC

 

 

 

 

 

 

VDS = 620 V

 

 

 

1.0

mA

 

 

for VIPer20/SP/DIP

 

 

 

 

 

 

VDS = 700 V

 

 

 

1.0

mA

 

 

for VIPer20A/ASP/ADIP

 

 

 

 

RDS( on)

Static Drain Source on

ID = 0.4 A

 

 

 

 

Ω

 

Resistance

for VIPer20/SP/DIP

 

13.5

16

 

 

for VIPer20A/ASP/ADIP

 

15.5

18

Ω

 

 

ID = 0.4 A

TJ = 100 oC

 

 

 

Ω

 

 

for VIPer20/SP/DIP

 

 

29

 

 

for VIPer20A/ASP/ADIP

 

 

32

Ω

tf

Fall Time

ID = 0.2 A

Vin = 300 V (1)

 

100

 

ns

 

 

(see fig.3)

 

 

 

 

 

tr

Rise Time

ID = 0.4 A

Vin = 300 V (1)

 

50

 

ns

 

 

(see fig. 3)

 

 

 

 

 

COSS

Output Capacitance

VDS = 25 V

 

 

90

 

pF

(1) On Inductive Load, Clamped.

 

 

 

 

 

 

SUPPLY SECTION

 

 

 

 

 

 

Symb ol

Parameter

T est Con ditio ns

Mi n.

Typ .

Max.

Un it

IDDch

Start-up Charging

VDD = 5 V

VDS = 70 V

 

-2

 

mA

 

Current

(see fig. 2 and fig. 15)

 

 

 

 

IDD0

Operating Supply Current

VDD = 12 V,

FSW = 0 KHz

 

12

16

mA

 

 

(see fig. 2)

 

 

 

 

 

IDD1

Operating Supply Current

VDD = 12 V,

FSW = 100 KHz

 

13

 

mA

IDD2

Operating Supply Current

VDD = 12 V,

FSW = 200 KHz

 

14

 

mA

VDDo ff

Undervoltage Shutdown

(see fig. 2)

 

7.5

8

 

V

VDDo n

Undervoltage Reset

(see fig. 2)

 

 

11

12

V

VDDhyst

Hysteresis Start-up

(see fig. 2)

 

2.4

3

 

V

4/21

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

ELECTRICAL CHARACTERISTICS (continued)

OSCILLATOR SECTION

Symb ol

Parameter

T est Con ditio ns

FSW

Oscillator Frequency

RT = 8.2 KΩ

CT =2.4 nF

 

Total Variation

VDD = 9 to15 V

 

 

 

with RT ± 1%

CT ± 5%

(see fig. 6 and fig. 9)

Mi n. Typ . Max. Un it

90 100 110 KHz

VOSCih

Oscillator Peak Voltage

7.1

V

VOSCi l

Oscillator Valley Voltage

3.7

V

ERROR AMPLIFIER SECTION

Symb ol

Parameter

Test Cond ition s

Mi n. Typ . Max. Un it

VDDreg

VDD Regulation Point

ICOMP = 0 mA

(see fig.1)

12.6

13

13.4

V

VDDreg

Total Variation

TJ = 0 to 100 oC

 

 

2

 

%

GBW

Unity Gain Bandwidth

From Input = VDD to Output = VCOMP

 

150

 

KHz

 

 

COMP pin is open

(see fig. 10)

 

 

 

 

AVOL

Open Loop Voltage

COMP pin is open

(see fig. 10)

45

52

 

dB

 

Gain

 

 

 

 

 

 

 

Gm

DC Transconductance

VCOMP = 2.5 V

(see fig. 1)

1.1

1.5

1.9

mA/V

VCOMPL O

Output Low Level

ICOMP = -400 μA

VDD = 14 V

 

0.2

 

V

VCOMPHI

Output High Level

ICOMP = 400 μA

 

VDD = 12 V

 

4.5

 

V

ICOMPLO

Output Low Current

VCOMP = 2.5 V

 

VDD = 14 V

 

-600

 

μA

 

Capability

 

 

 

 

 

 

 

ICOMPHI

Output High Current

VCOMP = 2.5 V

 

VDD = 12 V

 

600

 

μA

 

Capability

 

 

 

 

 

 

 

PWM COMPARATOR SECTION

Symb ol

Parameter

HID

VCOMP / IDpea k

VCOMPof f VCOMP offset

IDpeak

Peak Current Limitation

td

Current Sense Delay

 

to turn-off

tb

Blanking Time

ton( mi n)

Minimum on Time

Test Cond ition s

Mi n. Typ . Max.

Un it

VCOMP = 1 to 3 V

4.2

6

7.8

V/A

IDp eak = 10 mA

 

0.5

 

V

VDD = 12 V COMP pin open

0.5

0.67

0.9

A

ID = 1 A

 

250

 

ns

 

 

250

360

ns

 

 

350

 

ns

SHUTDOWN AND OVERTEMPERATURE SECTION

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VCOMPth

Restart threshold

(see fig. 4)

 

0.5

 

V

tDI Ssu

Disable Set Up Time

(see fig. 4)

 

1.7

5

μs

Tt sd

Thermal Shutdown

(see fig. 8)

140

170

190

oC

 

Temperature

 

 

 

 

 

Thyst

Thermal Shutdown

(see fig. 8)

 

40

 

oC

 

Hysteresis

 

 

 

 

 

5/21

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

Figure 1: VDD Regulation Point

COMP

 

I

Slope =

 

ICOMPHI

Gm in mA/V

VDD

0

ICOMPLO

VDDreg

FC00150

Figure 3: Transition Time

ID

10% Ipeak

t

VDS

90% VD

10% VD

t

tf

tr

FC00160

Figure 5: Breakdown Voltage vs Temperature

FC0 0 180

1.15

BVDS S

(Nor malize d)

1. 1

1.05

1

0.95

0

20

40

60

80

100

120

Temp era ture ( C)

Figure 2: Undervoltage Lockout

IDD

IDD0

VDDhyst

VDS = 70 V

Fsw = 0

 

VDDoff

VDD

VDDon

IDDch

 

 

FC00170

Figure 4: Shut Down Action

VOS C

 

 

t

VCOMP

tDIS s u

 

VCOMPth

t

ID

 

 

t

ENABLE

ENABLE

 

DISABLE

 

FC 00 0 6 0

Figure 6: Typical Frequency Variation

FC0 019 0

1

(%)

0

-1

-2

-3

-4

-5

0

20

40

60

80

100

120

140

Temperature ( C)

6/21

VIPer20/SP/DIP - VIPer20A/ASP/ADIP

Figure 7: Start-up Waveforms

Figure 8: Overtemperature Protection

Tj

Tt sd

Tt s d-Thys t

t

Vdd

Vddo n

Vddoff

t

Id

t

Vco mp

t

SC1 019 1

7/21

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