SGS Thomson Microelectronics Z0405SF1AA2, Z0409MF0AA2, Z0409MF1AA2, Z0409NF0AA2, Z0409NF1AA2 Datasheet

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Z04 Series

STANDARD

4A TRIACS

 

 

MAIN FEATURES:

Symbol

Value

Unit

 

 

 

IT(RMS)

4

A

VDRM/VRRM

600 to 800

V

IGT (Q

)

3 to 25

mA

1

 

 

 

 

 

 

 

DESCRIPTION

The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as touch light dimmers, fan controllers, HID lamp ignitors,...

Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers.

A2

G

A1

A1

A2 G

TO202-3 (Z04xxF)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

 

 

Value

Unit

 

 

 

 

 

 

IT(RMS)

RMS on-state current (full sine wave)

 

TI = 30°C

4

A

 

 

 

 

Tamb = 25°C

1

 

 

 

 

 

 

 

ITSM

Non repetitive surge peak on-state

 

F = 50 Hz

t = 20 ms

20

A

 

current (full cycle, Tj initial = 25°C)

 

 

 

 

 

 

 

F = 60 Hz

t = 16.7 ms

21

 

 

 

 

 

 

 

 

 

 

 

 

I²t

I²t Value for fusing

 

tp = 10 ms

2.2

A²s

dI/dt

Critical rate of rise of on-state current

 

F = 120 Hz

Tj = 125°C

20

A/µs

IG = 2 x IGT , tr 100 ns

 

 

 

 

 

 

 

IGM

Peak gate current

 

tp = 20 µs

Tj = 125°C

1.2

A

PG(AV)

Average gate power dissipation

 

Tj = 125°C

0.2

W

Tstg

Storage junction temperature range

 

 

- 40 to + 150

°C

Tj

Operating junction temperature range

 

 

- 40 to + 125

 

 

 

October 2001 - Ed: 4

1/6

SGS Thomson Microelectronics Z0405SF1AA2, Z0409MF0AA2, Z0409MF1AA2, Z0409NF0AA2, Z0409NF1AA2 Datasheet

Z04 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

 

Quadrant

 

 

Z04xx

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

02

05

 

09

10

 

 

 

 

 

 

 

 

 

 

 

 

 

IGT (1)

VD = 12 V

RL = 30 Ω

 

ALL

MAX.

3

5

 

10

25

mA

VGT

 

ALL

MAX.

 

 

1.3

 

V

 

 

 

 

 

 

VGD

VD = VDRM

RL = 3.3 kΩ Tj = 125°C

ALL

MIN.

 

 

0.2

 

V

IH (2)

IT = 50 mA

 

 

 

MAX.

3

5

 

10

25

mA

IL

IG = 1.2 IGT

 

 

I - III - IV

MAX.

6

10

 

15

25

mA

 

 

 

 

II

 

12

15

 

25

50

 

 

 

 

 

 

 

 

 

 

 

 

dV/dt (2)

VD = 67 %VDRM gate open

Tj = 110°C

MIN.

10

20

 

100

200

V/µs

(dV/dt)c (2)

(dI/dt)c = 1.8 A/ms

Tj = 110°C

MIN.

0.5

1

 

2

5

V/µs

 

 

 

 

 

 

 

 

 

 

 

 

STATIC CHARACTERISTICS

Symbol

 

 

Test Conditions

 

Value

Unit

 

 

 

 

 

 

 

 

VTM (2)

ITM = 5.5 A

tp = 380 µs

 

Tj = 25°C

MAX.

2.0

V

Vto (2)

Threshold voltage

 

Tj = 125°C

MAX.

0.95

V

Rd (2)

Dynamic resistance

 

Tj = 125°C

MAX.

180

m Ω

IDRM

VDRM = VRRM

 

 

Tj = 25°C

MAX.

5

µA

IRRM

 

 

 

Tj = 125°C

0.5

mA

 

 

 

 

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

 

 

 

 

Rth(j-l)

Junction to lead (AC)

15

°C/W

Rth(j-a)

Junction to ambient

100

°C/W

2/6

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