Samsung KM416V1200BTL-7, KM416V1200BTL-6, KM416V1200BTL-5, KM416V1200BT-7, KM416V1200BT-6 Datasheet

KM416C1000B, KM416C1200B	CMOS DRAM
KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS- before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES

¡Ü Part Identification

-KM416C1000B/B-L (5V, 4K Ref.)

-KM416C1200B/B-L (5V, 1K Ref.)

-KM416V1000B/B-L (3.3V, 4K Ref.)

-KM416V1200B/B-L (3.3V, 1K Ref.)

¡Ü	Active Power Dissipation
						Unit : mW
	Speed		3.3V			5V
		4K		1K	4K		1K
	-5	396		576	605		880
	-6	360		540	550		825
	-7	324		504	495		770

¡Ü Refresh Cycles

¡Ü Fast Page Mode operation

¡Ü 2 CAS Byte/Word Read/Write operation

¡Ü CAS-before-RAS refresh capability

¡Ü RAS-only and Hidden refresh capability

¡Ü Self-refresh capability (L-ver only)

¡Ü TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

¡Ü Early Write or output enable controlled write

¡Ü JEDEC Standard pinout

¡Ü Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages

¡Ü Single +5V¡¾10% power supply (5V product)

¡Ü Single +3.3V¡¾0.3V power supply (3.3V product)

FUNCTIONAL BLOCK DIAGRAM

Part

Refresh

Refresh period

RAS

Control

Vcc

UCAS

VCC

Vss

NO.

cycle

Normal

L-ver

LCAS

Clocks

VBB Generator

C1000B

5V

W

4K

64ms

Lower

V1000B

3.3V

128ms

Refresh Timer

Row Decoder

Data in

DQ0

Buffer

C1200B

5V

1K

16ms

to

&I/O

Lower

DQ7

V1200B

3.3V

Refresh Control

Data out

Memory Array

Amps

Buffer

OE

Refresh Counter

1,048,576 x16

Upper

¡Ü

Perfomance Range

Cells

Sense

Data in

DQ8

A0-A11

Row Address Buffer

Buffer

Speed

tRAC

tCAC

tRC

tPC

Remark

to

(A0 - A9)*1

Upper

DQ15

-5

50ns

15ns

90ns

35ns

5V/3.3V

A0 - A7

Col. Address Buffer

Column Decoder

Data out

(A0 - A9)*1

Buffer

-6

60ns

15ns

110ns

40ns

5V/3.3V

-7

70ns

20ns

130ns

45ns

5V/3.3V

Note) *1 : 1K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

KM416C1000B, KM416C1200B	CMOS DRAM
KM416V1000B, KM416V1200B

PIN CONFIGURATION (Top Views)

¡Ü				KM416C/V10(2)00BJ
	VCC					1	¡Û	42			VSS
	DQ0					2		41			DQ15
	DQ1					3		40			DQ14
	DQ2					4		39			DQ13
	DQ3					5		38			DQ12
	VCC					6		37			VSS
	DQ4					7		36			DQ11
	DQ5					8		35			DQ10
	DQ6					9		34			DQ9
	DQ7					10		33			DQ8
	N.C					11		32			N.C
	N.C					12		31			LCAS
		W				13		30			UCAS
	RAS					14		29			OE
*A11(N.C)						15		28			A9
*A10(N.C)						16		27			A8
	A0					17		26			A7
	A1					18		¡Û 25			A6
	A2					19		24			A5
	A3					20		23			A4
	VCC					21		22			VSS

¡Ü					KM416C/V10(2)00BT
	VCC						1 ¡Û	44			VSS
	DQ0						2	43			DQ15
	DQ1						3	42			DQ14
	DQ2						4	41			DQ13
	DQ3						5	40			DQ12
	VCC						6	39			VSS
	DQ4						7	38			DQ11
	DQ5						8	37			DQ10
	DQ6						9	36			DQ9
	DQ7						10	35			DQ8
	N.C						11	34			N.C
	N.C						12	33			N.C
	N.C						13	32			LCAS
		W					14	31			UCAS
	RAS						15	30			OE
*A11(N.C)							16	29			A9
*A10(N.C)							17	28			A8
	A0				¡Û		18	27			A7
	A1						19	26			A6
	A2						20	25			A5
	A3						21	24			A4
	VCC						22	23			VSS

*A10 and A11 are N.C for KM416C/V1200B(5V/3.3V, 1K Ref. product)

J : 400mil 42 SOJ

T : 400mil 50(44) TSOP II

Pin Name

Pin Function

A0 - A11

Address Inputs (4K Product)

A0 - A9

Address Inputs (1K Product)

DQ0 - 15

Data In/Out

VSS

Ground

Row Address Strobe

RAS

Upper Column Address Strobe

UCAS

Lower Column Address Strobe

LCAS

Read/Write Input

W

Data Output Enable

OE

VCC

Power(+5V)

Power(+3.3V)

N.C

No Connection

KM416C1000B, KM416C1200B							CMOS DRAM
KM416V1000B, KM416V1200B
ABSOLUTE MAXIMUM RATINGS
Parameter	Symbol				Rating				Units
			3.3V				5V
Voltage on any pin relative to VSS	VIN,VOUT	-0.5	to	+4.6		-1.0	to	+7.0	V
Voltage on VCC supply relative to VSS	VCC	-0.5	to	+4.6		-1.0	to	+7.0	V
Storage Temperature	Tstg	-55	to	+150		-55 to +150			¡É
Power Dissipation	PD		1				1		W
Short Circuit Output Current	IOS		50				50		mA

*Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, T A= 0 to 70¡É)

	Parameter	Symbol		3.3V				5V		Units
			Min	Typ		Max	Min	Typ	Max
Supply Voltage		VCC	3.0	3.3		3.6	4.5	5.0	5.5	V
Ground		VSS	0	0		0	0	0	0	V
Input High Voltage		VIH	2.0	-		VCC+0.3*1	2.4	-	VCC+1.0*1	V
Input Low Voltage		VIL	-0.3*2	-		0.8	-1.0*2	-	0.8	V
*1	: VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2	: -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

	Max		Parameter	Symbol	Min	Max	Units
		Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.3V,		II(L)	-5	5	uA
		all other input pins not under test=0 Volt)
	3.3V	Output Leakage Current		IO(L)	-5	5	uA
		(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
		Output High Voltage Level(IOH=-2mA)		VOH	2.4	-	V
		Output Low Voltage Level(IOL=2mA)		VOL	-	0.4	V
		Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.5V,		II(L)	-5	5	uA
		all other input pins not under test=0 Volt)
	5V	Output Leakage Current		IO(L)	-5	5	uA
		(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
		Output High Voltage Level(IOH=-5mA)		VOH	2.4	-	V
		Output Low Voltage Level(IOL=4.2mA)		VOL	-	0.4	V